24 resultados para State-space

em Chinese Academy of Sciences Institutional Repositories Grid Portal


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A new high-order refined shear deformation theory based on Reissner's mixed variational principle in conjunction with the state- space concept is used to determine the deflections and stresses for rectangular cross-ply composite plates. A zig-zag shaped function and Legendre polynomials are introduced to approximate the in-plane displacement distributions across the plate thickness. Numerical results are presented with different edge conditions, aspect ratios, lamination schemes and loadings. A comparison with the exact solutions obtained by Pagano and the results by Khdeir indicates that the present theory accurately estimates the in-plane responses.

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We have studied theoretically the inherent mechanisms of nonvolatile holographic storage in doubly doped LiNbO3 crystals. The photochromic effect of doubly doped LiNbO3 crystals is discussed, and the criterion for this effect is obtained through the photochromism-bleach factor a = S(21)gamma(1)/S(11)gamma(2) that we define. The two-center recording and fixing processes are analytically discussed with extended Kukhtarev equations, and analytical expressions for recorded and fixed steady-state space-charge fields as well as temporal behavior during the fixing process are obtained. The effects of microphysical quantities, the macrophotochromic effect on fixing efficiency, and recorded and fixed steady-state space-charge fields, are discussed analytically and numerically. (C) 2002 Optical Society of America.

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为了降低生料成分的不确定性给水泥生料质量控制系统带来的影响,提出了率值补偿的控制策略.分别为三率值创建目标函数,并利用状态空间搜索策略解决多目标优化问题.针对初始样本空间不能覆盖所有样本的问题,提出了基于神经网络的估算模型,对初始样本空间进行拓扑.通过估价函数对状态空间中的状态量进行评价,得到最优的率值状态量;根据率值对原料配比进行调整,最后使率值偏差得到补偿,同时使给配比造成的波动最小.工业实验结果表明,生料的质量合格率由原来的30%提高到50%,该系统能有效地对配料过程进行优化控制.证明了基于神经网络的状态空间搜索策略为水泥生料配料多目标寻优问题提供了一种可行的方法。

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在人工智能领域中 ,强化学习理论由于其自学习性和自适应性的优点而得到了广泛关注 随着分布式人工智能中多智能体理论的不断发展 ,分布式强化学习算法逐渐成为研究的重点 首先介绍了强化学习的研究状况 ,然后以多机器人动态编队为研究模型 ,阐述应用分布式强化学习实现多机器人行为控制的方法 应用SOM神经网络对状态空间进行自主划分 ,以加快学习速度 ;应用BP神经网络实现强化学习 ,以增强系统的泛化能力 ;并且采用内、外两个强化信号兼顾机器人的个体利益及整体利益 为了明确控制任务 ,系统使用黑板通信方式进行分层控制 最后由仿真实验证明该方法的有效性

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针对一类载人潜水器(MSV,MannedSubmersibleVehicle)在动力定位中多自由度之间存在的强耦合、非线性,以及系统参数的时变特性,文章采用带遗忘因子的递推最小二乘法和平方根法对系统参数进行辨识,然后在状态空间进行多输入多输出(MIMO)线性系统的最优控制研究。仿真结果表明,该两种改进LQG控制方法对于外界扰动以及系统的参数时变具有良好的控制效果,控制精度得到提高,为实际载人潜水器控制系统的多自由度动力定位控制提供了坚实的依据。

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本文为动力学控制工业机器人提出了一种综合学习算法,这种学习算法可将以前所学的信息用于新的控制输入.这种控制方法不需要事先知道机器人动力学,它易于应用于特殊的控制问题或修改以适应实际系统中的变化,控制方法在时间上是有效的,且很适合于定点实现.学习控制算法的有效性通过4自由度的直接驱动机器人前两个关节在重复运动中的计算机仿真实验得到了验证.

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基于PC和多轴运动控制器的开放式数控系统是理想的开放式数控系统。介绍了基于PMAC的开放式数控系统结构形式,PMAC的差补、位置控制、伺服功能、以PMAC和PC机为硬件平台搭建了数控系统,并对其硬件构成和软件设计结构进行了分析。着重从软件设计的角度,介绍了PTALK控件的功能和作用,对数控系统软件构成进行了详细的阐述。并设计出了友好的用户界面,在实际应用中具有重要意义。

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There are seven strong earthquakes with M >= 6.5 that occurred in southern California during the period from 1980 to 2005. In this paper, these earthquakes were studied by the LURR (Load/Unload Response Ratio) method and the State Vector method to detect if there are anomalies before them. The results show that LURR anomalies appeared before 6 earthquakes out of 7 and State Vector anomalies appeared before all 7 earthquakes. For the LURR method, the interval between maximum LURR value and the forthcoming earthquake is 1 to 19 months, and the dominant mean interval is about 10.7 months. For the State Vector method, the interval between the maximum modulus of increment State Vector and the forthcoming earthquake is from 3 to 27 months, but the dominant mean interval between the occurrence time of the maximum State Vector anomaly and the forthcoming earthquake is about 4.7 months. The results also show that the minimum valid space window scale for the LURR and the State Vector is a circle with a radius of 100 km and a square of 3 degrees 3 degrees, respectively. These results imply that the State Vector method is more effective for short-term earthquake prediction than the LURR method, however the LURR method is more effective for location prediction than the State Vector method.

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The steady state ion acceleration at the front of a cold solid target by a circularly polarized flat-top laser pulse is studied with one-dimensional particle-in-cell (PIC) simulation. A model that ions are reflected by a steady laser-driven piston is used by comparing with the electrostatic shock acceleration. A stable profile with a double-flat-top structure in phase space forms after ions enter the undisturbed region of the target with a constant velocity. (C) 2007 Elsevier B.V. All rights reserved.

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We report on space-selective co-precipitation of silver and gold nanoparticles in Ag+, Au3+ co-doped silicate glasses by irradiation of femtosecond laser pulses and subsequent annealing at high temperatures. The color of the irradiated area in the glass sample changed from yellow to red with the increase of the annealing temperature. The effects of average laser power and annealing temperature on precipitation of the nanoparticles were investigated. A reasonable mechanism was proposed to explain the observed phenomena. (c) 2006 Elsevier Ltd. All rights reserved.

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A new optimized structure of an UTC (uni-traveling-carrier) photodiode is developed and epitaxied by metal-organic chemical vapor deposition. We fabricated a UTC photodiode of 30 mu m in diameter. Theoretical simulation based on drift-diffusion model was used to analyze the space-charge-screening effect in UTC photodiode primarily in two aspects: the carrier concentrations and the space electric field. The simulation results were generally in agreement with the experimental data.

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Ce-doped Bi12SiO20 (BSO) single crystal was grown on board of the Chinese Spacecraft-Shenzhou No. 3. A cylindrical crystal, 10 mm in diameter and 40 mm in length, was obtained. The morphology of crystals is significantly different for ground- and space-grown portions. The space- and ground-grown crystals have been characterized by Cc concentration distribution, X-ray rocking curve absorption spectrum and micro-Raman spectrum. The results show that the quality of Ce-doped BSO crystal grown in space is more homogeneous and more perfect than that of ground grown one. (C) 2004 Published by Elsevier B.V.

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Unusual dark current voltage (I-V) characteristics were observed in GaN Schottky diodes. I-V characteristics of the GaN Schottky diodes were measured down to the magnitude of 10(-14) A. Although these Schottky diodes were clearly rectifying, their I-V characteristics were non-ideal which can be judged from the non-linearity in the semi-logarithmic plots. Careful analysis of the forward bias I-V characteristics on log-log scale indicates space-charge-limited current (SCLC) conduction dominates the current transport in these GaN Schottky diodes. The concentration of the deep trapping centers was estimated to be higher than 10(15) cm(-3). In the deep level transient spectra (DLTS) measurements for the GaN Schottky diodes, deep defect levels around 0.20 eV below the bottom of the conduction band were identified, which may act as the trapping centers. The concentration of the deep centers obtained from the DLTS data is about 5 x 10(15) cm(-3). SCLC measurements may be used to probe the properties of deep levels in wide bandgap GaN-AlGaN compound semiconductors, as is the case with insulators in the presence of trapping centers. (c) 2005 Elsevier Ltd. All rights reserved.

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A semi-insulating GaAs single crystal ingot was grown in a recoverable satellite, within a specially designed pyrolytic boron nitride crucible, in a power-traveling furnace under microgravity. The characteristics of a compound semiconductor single crystal depends fundamentally on its stoichiometry, i.e. the ration of two types of atoms in the crystal. a practical technique for nondestructive and quantitative measuring stoichiometry in GaAs single crystal was used to analyze the space-grown GaAs single crystal. The distribution of stoichiometry in a GaAs wafer was measured for the first time. The electrical, optical and structural properties of the space-grown GaAs crystal were studied systematically, Device fabricating experiments prove that the quality of field effect transistors fabricated from direct ion-implantation in semi-insulating GaAs wafers has a close correlation with the crystal's stoichiometry. (C) 2000 Elsevier Science S.A. All rights reserved.

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We present a comprehensive study of the one-dimensional modulation instability of broad optical beams in biased photo refractive-photovoltaic crystals under steady-state conditions. We obtain the one-dimensional modulation instability growth rate by globally treating the space-charge field and by considering distinction between values of Eo in nonlocal effects and local effects in the space-charge field, where Eo is the field constant correlated with terms in the space-charge field, which depends on the external bias field, the bulk photovoltaic effect, and the ratio of the optical beam's intensity to that of the dark irradiance. The one-dimensional modulation instability growth rate in local effects can be determined from that in nonlocal effects. When the bulk photovoltaic effect is neglectable, irrespective of distinction between values of Eo in nonlocal effects and local effects in the space-charge field, the one-dimensional modulation instability growth rates in nonlocal effects and local effects are those of broad optical beams studied previously in biased photorefractive-nonphotovoltaic crystals. When the external bias field is absent, the one-dimensional modulation instability growth rates in nonlocal effects and local effects predict those of broad optical beams in open- and closed-circuit photorefractive-photovoltaic crystals. (c) 2004 Elsevier B.V. All rights reserved.