The regional types of China's floating population: Identification methods and spatial patterns

With the rapid increase of the number and influence of floating population in China, it is urgently needed to understand the regional types of China's floating population and their spatial characteristics. After reviewing the current methods for identifying regional types of floating population, this paper puts forward a new composite-index identification method and its modification version which is consisted of two indexes of the net migration rate and gross migration rate. Then, the traditional single-index and the new composite-index identification methods are empirically tested to explore their spatial patterns and characteristics by using China's 2000 census data at county level. The results show: (1) The composite-index identification method is much better than traditional single-index method because it can measure the migration direction and scale of floating simultaneously, and in particular it can identify the unique regional types of floating population with large scale of immigration and emigration. (2) The modified composite-index identification method, by using the share of a region's certain type of floating population to the total in China as weights, can effectively correct the over- or under-estimated errors due to the rather large or small total population of a region. (3) The spatial patterns of different regional types of China's floating population are closely related to the regional differentiation of their natural environment, population density and socio-economic development level. The three active regional types of floating population are mainly located in the eastern part of China with lower elevation, more than 800 mm precipitation, rather higher population densities and economic development levels.

Prediction of soil adsorption coefficients from retention parameters on three reversed-phase liquid chromatographic columns

Reversed-phase high-performance liquid chromatographic (RP-HPLC) retention parameters, which are determined by the intermolecular interactions in retention process, can be considered as the chemical molecular descriptors in linear free energy relationships (LFERs). On the basis of the characterization and comparison of octadecyl-bonded silica gel (ODS), cyano-bonded silica gel (CN), and phenyl-bonded silica gel (Ph) columns with linear solvation energy relationships (LSERs), a new multiple linear regression model using RP-HPLC retention parameters on ODS and CN columns as variables for estimation of soil adsorption coefficients was developed. It was tested on a set of reference substances from various chemical classes. The results showed that the multicolumn method was more promising than a single-column method was for the estimation of soil adsorption coefficients. The accuracy of the suggested model is identical with that of LSERs.

Synthesis of a terbium fluorescent chelate and its application to time-resolved fluoroimmunoassay

A new nonadentate ligand, N, N, N-1, N-1-[2,6-bis(3'-aminomethyl-1 1'-pyrazolyl)-4-phenylpyridine]tetrakis(acetic acid) (BPTA) for a Tb3+ fluorescent complex was synthesized. The Tb3+ complex is strongly fluorescent, having a large fluorescence quantum yield of 1.00 and very long fluorescence lifetime of 2.681 ms in 0.05 M berate buffer of pH 9.1. Streptavidin (SA) was labeled with SPTA by using its succinimidyl monoester, and the BPTA-Tb3+-labeled SA was used in sandwich-type time-resolved fluoroimmunoassay (TR-FIA) of alpha -fetoprotein (AFP) and carcinoembryonic antigen (CEA) in human sera. The Tb3+-labeled SA was also used in competitive type TR-FIA of bensulfuron- methyl (BSM) in water. The detection limits of these assays are 42 pg/mL for AFP, 70 pg/mL for CEA, and 0.4 ng/mL for BSM. In addition, a new simultaneous measurement method for AFP and CEA in a human serum sample was developed by using 4,4'-bis(1 " ,1 " ,1 " ,2 " ,2 " ,3 " ,3 " -heptafluoro-4 " ,6 " -hexanedion-6 " -yl)chlorosulfo-o-terphenyl ((BHHCT)-Eu3+-labeled anti-AFP antibody, biotinylated anti-CEA antibody, and BPTA-Tb3+-labeled SA. The concentrations of AFP and CEA in 39 human serum samples were determined, and the results were compared with those of the independently determined AFP and CEA by TR-FIA with a single-label method. A good correlation was obtained with the correlation coefficients of 0.991 for AFP and 0.994 for CEA.

Thermoelastic Stresses in SiC Single Crystals Grown by the Physical Vapor Transport Method

A finite element-based thermoelastic anisotropic stress model for hexagonal silicon carbide polytype is developed for the calculation of thermal stresses in SiC crystals grown by the physical vapor transport method. The composite structure of the growing SiC crystal and graphite lid is considered in the model. The thermal expansion match between the crucible lid and SiC crystal is studied for the first time. The influence of thermal stress on the dislocation density and crystal quality is discussed.

Nonlinear Analysis of m Method for Single Pile Under Lateral Loading

通过对大量模型试验结果的分析,提出了简便合理的水平荷载作用下单桩的计算方法。该方法将常用m法中单一m值与位移建立指数关系,并由b_m及K两参数来描述。将这一关系引入常用单桩m法计算中,则计算结果可考虑单桩非线性响应的影响。

Simple ABCD matrix method for evaluating optical coupling system of laser diode to single-mode fiber with a lensed-tip

In this paper, we present a simple technique to determine the coupling efficiency between a laser diode and a lensed-tip based on the ABCD transformation matrix method. We have compared our analysis technique to that of previous work and have found that the presented method is reliable in predicting the coupling efficiency of lensed-tip and has the advantage of simplicity of coupling efficiency calculation even by a pocket calculator. The results can be useful for designing coupling optics. (c) 2005 Elsevier GmbH. All rights reserved.

Investigation of native defects and property of bulk ZnO single crystal grown by a closed chemical vapor transport method

Hall effect, Raman scattering, photoluminescence spectroscopy (PL), optical absorption (OA), mass spectroscopy, and X-ray diffraction have been used to study bulk ZnO single crystal grown by a closed chemical vapor transport method. The results indicate that shallow donor impurities (Ga and Al) are the dominant native defects responsible for n-type conduction of the ZnO single crystal. PL and OA results suggest that the as-grown and annealed ZnO samples with poor lattice perfection exhibit strong deep level green photoluminescence and weak ultraviolet luminescence. The deep level defect in as-grown ZnO is identified to be oxygen vacancy. After high-temperature annealing, the deep level photoluminescence is suppressed in ZnO crystal with good lattice perfection. In contrast, the photoluminescence is nearly unchanged or even enhanced in ZnO crystal with grain boundary or mosaic structure. This result indicates that a trapping effect of the defect exists at the grain boundary in ZnO single crystal. (C) 2007 Elsevier B.V. All rights reserved.

Single-mode behaviour judgment of optical waveguides by imaginary-distance beam propagation method under perfectly matched layer boundary condition

Imaginary-distance beam propagation method under the perfectly matched layer boundary condition is applied to judge single-mode behaviour of optical waveguides, for the first time to our knowledge. A new kind of silicon-on-insulator-based rib structures with half-circle cross-section is presented. The single-mode behaviour of this kind of waveguide with radius 2mum is investigated by this method. It is single-mode when the slab height is not smaller than the radius.

Growth of ZnO single crystal by chemical vapor transport method

ZnO crystals were grown by CVT method in closed quartz tube under seeded condition. Carbon was used as a transport agent to enhance the chemical transport of ZnO in the growth process. ZnO single crystals were grown by using GaN/sapphire and GaN/Si wafer as seeds. The property and crystal quality of the ZnO single crystals was studied by photoluminescence spectroscopy and X-ray diffraction technique.

Simple method for estimating minimum bend radii of SOI single mode curved rib waveguides

A simple method based on the effective index method was used to estimate the minimum bend radii of curved SOI waveguides. An analytical formula was obtained to estimate the minimum radius of curvature at which the mode becomes cut off due to the side radiative loss.

Characterization of bulk ZnO single crystal grown by a CVT method - art. no. 68410F

Hall effect, photoluminescence spectroscopy (PL), mass spectroscopy and X-ray diffraction have been used to study bulk ZnO single crystal grown by a closed seeded chemical vapor transport method. Enhancement of n-type electrical conduction and increase of nitrogen concentration are observed of the ZnO samples after high temperature annealing. The results suggest that vacancy is dominant native defect in the ZnO material. These phenomena are explained by a generation of shallow donor defect and suppression of deep level defects in ZnO after the annealing.

Native deep level defects in ZnO single crystal grown by CVT method - art. no. 68410I

Hall effect, photoluminescence (PL), infrared absorption, deep level transient spectroscopy (DLTS), and Raman scattering have been used to study property and defects of ZnO single crystal grown by a chemical vapor transport method (CVT). As-grown ZnO is N type with free electron density Of 10(16)-10(17)cm(-3). It has a slight increase after 900 degrees C annealing in oxygen ambient. The DLTS measurement revealed four deep level defects with energy at 0.30eV, 0.50eV, 0.68eV and 0.90eV in the as-grown ZnO sample, respectively. After the high temperature annealing, only the 0.5eV defect survive and has a concentration increase. PL results of the as-grown and annealed ZnO indicate that the well-known green emission disappear after the annealing. The result suggests a correlation between the 0.68eV defect and the green PL peak. Results of P-doped ZnO were also compared with the undoped ZnO sample. The nature of the defects and their influence on the material property have been discussed.

Growth of ZnO single crystal by chemical vapor transport method

ZnO crystals were grown by CVT method in closed quartz tube under seeded condition. Carbon was used as a transport agent to enhance the chemical transport of ZnO in the growth process. ZnO single crystals were grown by using GaN/sapphire and GaN/Si wafer as seeds. The property and crystal quality of the ZnO single crystals was studied by photoluminescence spectroscopy and X-ray diffraction technique.