使用CC标准开发的高保证安全信息系统

通用标准（Common Criteria）提供了衡量系统安全性的流行准则。本文主要提出通过各类保证措施，如何构建符合CC标准的高保证安全信息系统。文中首先给出了CC的评估模型、评估过程和安全保证的具体要求。然后以开发安全审计系统为例，分析了系统安全功能和保证要求的产生、审计系统的实现框架以及为达到标准要求而在系统开发过程中使用的各种保证证据和保证措施。最后，又分析了审计系统对整个系统的性能影响因素，并提出了改进办法。本文通过深入剖析通用标准中各个保证要求的内涵，为开发具有高保证要求的信息系统提供了理论指导和实现方法。

Numerical and Experimental Investigation On The Prevention of Co Deflagration

The exhaust gases from industrial furnaces contain a huge amount of heat and chemical enthalpy. However, it is hard to recover this energy since exhaust gases invariably contain combustible components such as carbon monoxide (CC). If the CO is unexpectedly ignited during the heat recovery process, deflagration or even detonation could occur, with serious consequences such as complete destruction of the equipment. In order to safely utilize the heat energy contained in exhaust gas, danger of its explosion must be fully avoided. The mechanism of gas deflagration and its prevention must therefore be studied. In this paper, we describe a numerical and experimental investigation of the deflagration process in a semi-opened tube. The results show that, upon ignition, a low-pressure wave initially spreads within the tube and then deflagration begins. For the purpose of preventing deflagration, an appropriate amount of nitrogen was injected into the tube at a fixed position. Both simulation and experimental results have shown that the injection of inert gas can successfully interrupt the deflagration process. The peak value of the deflagration pressure can thereby be reduced by around 50%. (C) 2008 Elsevier Ltd. All rights reserved.

Existence of the transverse relaxation time in optically excited bulk semiconductors

Two basic types of depolarization mechanisms, carrier-carrier (CC) and carrier-phonon (CP) scattering, are investigated in optically excited bulk semiconductors (3D), in which the existence of the transverse relaxation time is proven based on the vector property of the interband transition matrix elements. The dephasing rates for both CC and CP scattering are determined to be equal to one half of the total scattering-rate-integrals weighted by the factors (1 - cos chi), where chi are the scattering angles. Analytical expressions of the polarization dephasing due to CC scattering are established by using an uncertainty broadening approach, and analytical ones due to both the polar optical-phonon and non-polar deformation potential scattering (including inter-valley scattering) are also presented by using the sharp spectral functions in the dephasing rate calculations. These formulas, which reveal the trivial role of the Coulomb screening effect in the depolarization processes, are used to explain the experimental results at hand and provide a clear physical picture that is difficult to extract from numerical treatments.

The origin of the transverse relaxation time in optically excited semiconductor quantum wells

The origin of the transverse relaxation time in optically excited semiconductor quantum wells is investigated based on the vector property of the interband transition matrix elements. The dephasing rate due to carrier-carrier (CC) scattering is found to be equal to half of the common momentum relaxation rate. The analytical expression of the polarization dephasing due to CC scattering in two-dimension is established and the dependence of the dephasing rate Gamma(cc) on the carrier density N is determined to be Gamma(cc) = constant (.) N-1/2, which is used to explain the experimental results and provides a promising physical picture. (C) 2004 Elsevier B.V. All rights reserved.