中国华北和美国加州地区地震层析成像研究

In recent years seismic tomography has become a powerful tool for studying the three-dimensional crust and mantle structure. In this study, we collected a large number of regional and teleseismic travel-time data and used seismic tomography method to study the relationship between earthquake occurrence and crustal heterogeneity for the 1992 Landers earthquake, heterogeneity and evolution of lithosphere under North China Craton and Southern California, and deep structure and origin of the Changbai intraplate volcano in Northeast China. Our results show a correlation between the seismic rupture zone and crustal heterogeneity. The distribution of the Landers aftershocks is cluster-like and separated or terminated in areas where low-velocity anomalies exist．Most of the large earthquakes with magnitudes >4.0 occurred in or around areas with high P-wave velocity．The possibility is that high-velocity areas are brittle and strong parts which can sustain seismogenic stress，and so can generate earthquakes. Our tomographic images show a very heterogeneous structure in the crust and upper mantle beneath Southern California. Three major anomalies in the upper mantle are revealed clearly beneath the southern Sierra Nevada, Transverse Ranges and Salton Trough. We consider that the high-velocity anomaly beneath the Transverse Ranges was formed through asymmetrical two-side convergence of subcrustal lithosphere and sinking to asthenosphere. Formation of the dense crust root and “drip structure” caused the high-velocity anomaly under the southern Sierra Nevada. The Salton Trough low is the response to the lithospheric extension when the Pacific plate was rifted away from the North American Plate. The tomograpic images beneath the North China Craton show that there exist different lithospheric structures under the different blocks. Complex, prominent low-velocity and high-velocity anomalies are imaged beneath the North China Basin, Trans-North China Orogen (TNCO), and Ordos Block which correspond to rifted, orogenic and cratonic lithospheres, respectively. The thickness of the three-type lithospheres is about 70, 90 and >250 km, respectively. Our results suggest that lithospheric thinning under the eastern part of North China Craton is due to long-term replacement and chemical and thermal erosion of the ancient lithosphere by the hot asthenosphere. The remains of ancient lithosphere exist either in the present upper mantle or have sunk into the mantle transition zone. Our tomographic result of the Changbai volcanic area suggests that the origin of the Changbai volcano is related to the deep dehydration of the subducted Pacific slab and corner flow in the big mantle wedge (BMW) above the stagnant Pacific slab.

Energy band and acceptor binding energy of GaN and AlxGa1-xN

The hole effective-mass Hamiltonian for the semiconductors of wurtzite structure is established, and the effective-mass parameters of GaN and AlxGa1-xN are given. Besides the asymmetry in the z and x, y directions, the linear term of the momentum operator in the Hamiltonian is essential in determining the valence band structure, which is different from that of the zinc-blende structure. The binding energies of acceptor states are calculated by solving strictly the effective-mass equations. The binding energies of donor and acceptor for wurtzite GaN are 20 and 131, 97 meV, respectively, which are inconsistent with the recent experimental results. It is proposed that there are two kinds of acceptors in wurtzite GaN. One kind is the general acceptor such as C, substituting N, which satisfies the effective-mass theory, and the other includes Mg, Zn, Cd etc., the binding energy of which deviates from that given by the effective-mass theory. Experimentally, wurtzite GaN was grown by the MBE method, and the PL spectra were measured. Three main peaks are assigned to the DA transitions from the two kinds of acceptor. Some of the transitions were identified as coming from the cubic phase of GaN, which appears randomly within the predominantly hexagonal material. The binding energy of acceptor in ALN is about 239, 158 meV, that in AlxGa1-xN alloys (x approximate to 0.2) is 147, 111 meV, close to that in GaN. (C) 2000 Published by Elsevier Science S.A. All rights reserved.