Strain effect on the band structure of InAs/GaAs quantum dots

The strain effect on the band structure of InAs/GaAs quantum dots has been investigated. 1 mu m thick InGaAs cap layer was added onto the InAs quantum dot layer to modify the strain in the quantum dots. The exciton energies of InAs quantum dots before and after the relaxation of the cap layer were determined by photoluminescence. When the epilayer was lifted off from the substrate by etching away the sacrifice layer (AlAs) by HF solution, the energy of exciton in the quantum dots decreases due to band gap narrowing resulted from the strain relaxation. This method can be used to obtain much longer emission wavelength from InAs quantum dots.

Theoretical investigation on quantum well lasers with extremely low vertical beam divergence and low threshold current

A specially designed quantum well laser for achieving extremely low vertical beam divergence was reported and theoretically investigated. The laser structure was characterized by two low index layers inserted between the waveguide layers and the cladding layers. The additional layers were intended to achieve wide optical spread in the cladding layers and strong confinement in the active region. This enabled significant reduction of beam divergence with no sacrifice in threshold current density. The numerical results showed that lasers with extremely low vertical beam divergence from 20 degrees down to 11 degrees and threshold current density of less than 131 A/cm(2) can be easily achieved by optimization of the structure parameters. Influences of individual key structure parameters on beam divergence and threshold current density are analyzed. Attention is also paid to the minimum cladding layer thicknesses needed to maintain low threshold current densities and low internal loss. The near and far field patterns are given and discussed. (C) 1998 American Institute of Physics.

A new half-flash architecture for high speed video ADC

In this paper a new half-flash architecture for high speed video ADC is presented. Based on a high speed single-way analog switch circuit, this architecture effectively reduces the number of elements. At the same lime no sacrifice of speed is needed compared with the normal half-flash structure.

A comparative study of insoluble and soluble polyimide thin films

Physical properties of thin films of soluble and insoluble aromatic polyimides were compared by d.s.c., u.v.-visible and fluorescence spectroscopy, and prism coupler technique. D.s.c. results showed that the thermal properties of insoluble polyimides are superior to those of soluble ones, owing to the specific molecular interactions of insoluble polyimides, revealed by fluorescence spectroscopy. However, the specific molecular interactions sacrifice the transparency in their thin films, shown by u.v.-visible transmission spectra. Negative birefringence of thin films, not only for soluble polimides but also for polyamic acids of insoluble polyimides, was confirmed by prism coupler, while thin films of insoluble polyimides thermally imidized lack high levels of negative birefringence. It is regarded that thin films of insoluble polyimides thermally imidized are likely to be isotropic because of molecular relaxation above their glass transition temperatures (T-g) in the course of thermal imidization, according to Flory's principle. On the contrary, thin films of insoluble poyimide chemically imidized keep the same levels of negative birefringence as those of the relevant polyamic acid thin films. Judging from the opposite cases, it is recognized that molecular relaxation above T-g weakens the optical anisotropy of polyimide thin films. (C) 1998 Elsevier Science Ltd. All rights reserved.