Quantum trajectory analysis for electrical detection of single-electron spin resonance

A Monte Carlo simulation on the basis of quantum trajectory approach is carried out for the measurement dynamics of a single-electron spin resonance. The measured electron, which is confined in either a quantum dot or a defect trap, is tunnel coupled to a side reservoir and continuously monitored by a mesoscopic detector. The simulation not only recovers the observed telegraphic signal of detector current, but also predicts unique features in the output power spectrum which are associated with electron dynamics in different regimes.

Distinguishing the sources of Asian dust based on electron spin resonance signal intensity and crystallinity of quartz

IEECAS SKLLQG

Long lasting phosphorescence, thermoluminescence and electron spin resonance property of Mn2+ activated ZnO-Al2O3SiO2 ceramic

The long lasting phosphorescence (LLP) phenomenon in Mn2+-doped ceramic based on ZnO-Al2O3-SiO2 (ZASM) is observed. After irradiation by a UVP standard mercury lamp peaking at 254 nm with a power of 0.6 mW/cm(2) for 15 min, the ceramic sample emits a bright green light peaking at 519 nm, which can be seen in the dark even 15 h after the removal of UVP standard mercury lamp by the naked eyes whose limit of light perception is 0.32 mcd/m(2). The initial afterglow intensity reaches about 1900 mcd/m(2), and the color coordinate (X, Y) is (0.2280, 0.5767) at about 10 s after stopping irradiation. The thermoluminescence (TL) spectra show that there are at least three kinds of trap centers with different trap levels while electron spin resonance (ESR) spectra indicate that there are electron- and hole-trapping centers induced after irradiation by a UVP standard mercury lamp. Based on these measurements, the LLP is considered to be due to the recombination of electrons and holes at trapping centers with different levels, which are firstly thermally released back to Mn2+ and then give rise to the bright green LLP at room temperature.

Study on the modified electrode of conducting polymers .3. Electron spin resonance characteristic of polypyrrole film electrode doped with heteropolyanions

The ESR of PPy films doped with Co (W2O7)(6)(10-) and CuW12O406- ions were reported and discussed. Results show that heteropolyanions not only play the role of neutralizing electricity in the PPy film, but also interact with the PPy molecular chain to form some adducts. The adducts affect the electronic structure of the PPy film and are unstable at more positive or more negative potentials. Dysonian ESR lineshape was recorded for the dry PPy film with CuW12O406- for the first time.

Experimental measurement of microwave-induced electron spin-flip time

The electron spin resonance (ESR) is optically detected by monitoring the microwave-induced changes in the circular polarization of the neutral exciton (X) and the negatively charged exciton (X-) emission in CdTe quantum wells with low density of excess electrons. We find that the circular polarization of the X and X- emission is a mapping of the spin polarization of excess electrons. By analyzing the ESR-induced decrease in the circular polarization degree of the X emission, we deduce the microwave-induced electron spin-flip time >0.1 mus, which is much longer than the recombination time of X and X-. This demonstrates that the optically detected ESR in type I quantum wells with low density of excess electrons does not obey the prerequisite for the conventional optically detected magnetic resonance. (C) 2001 American Institute of Physics.

Characterization of iron atoms in the framework of MFI-type zeolites by UV resonance Raman spectroscopy

Silicalite-I, ZSM-5, and Fe-ZSM-5 zeolites prepared from two different silicon sources are characterized by UV resonance Raman (UVRR) spectroscopy, X-ray diffraction (XRD), electron spin resonance (ESR), and UV/visible diffuse reflectance spectroscopy (UV/Vis DRS). A new technique for investigating zeolitic structure, UV resonance Raman spectroscopy selectively enhances the Raman bands associated with framework iron atoms incorporated into MFI-type zeolites, and it is very sensitive in identifying the iron atoms in the framework of zeolites, while other techniques such as XRD, ESR, and UV/Vis DRS have failed in uncovering trace amounts of iron atoms in the framework of zeolites. (C) 2000 Academic Press.

飞秒激光辐照K9玻璃引起的暗化和折射率变化

对不同辐照条件下近红外飞秒激光在K9玻璃内部诱导产生的暗化现象和永久性折射率改变进行了实验研究。通过辐照前后的显微镜图片、吸收光谱、电子自旋共振谱(ESR)以及激光衍射实验，分析了K9玻璃中暗化现象产生的微观过程，发现暗化是由诱导产生的空穴型色心引起的。暗化程度和折射率改变随激光强度、扫描速度、扫描行间距变化而变化。光致色心的形成与非线性电离有关。对折射率永久性改变进行了简单说明，其机理仍在探索中。

Photoreduction of Ag+ in aluminoborate glasses induced by irradiation of a femtosecond laser

We report on photoreduction of Ag+ in aluminoborate glasses induced by irradiation of a femtosecond laser. Novel fluorescence was observed in the femtosecond laser irradiated glass when excited by a 365 nm ultraviolet lamp. Optical absorption, emission, and electron spin resonance spectra of the glass samples demonstrated that after the laser irradiation, portions of silver ions near the focused part of the laser beam inside the glass were reduced to silver atoms, which resulted in the formation of the characteristic fluorescence. The observed phenomenon may have promising applications in the fabrication of functional optical devices.

飞秒激光脉冲照射诱导含芴结构树脂共聚物结构变化及机理的研究

在室温下用聚焦的飞秒激光照射高折射率、低双折射的透明含芴结构树脂-对苯二甲酸乙二醇酯(PET)共聚物，探索飞秒激光制备高分子光学功能微结构的可能性。通过紫外-可见吸收光谱、红外光谱、电子自旋共振谱、光学显微镜、扫描电镜及透射电镜等分析手段，对该材料在飞秒激光照射后的结构变化及机理进行研究。结果发现：含芴结构树脂共聚物在飞秒激光照射后产生化学键断裂，生成未成对电子，并形成无定形碳；照射区在可见光区域的吸收增强；随激光能量密度的减少在激光会聚点附近诱导结构由慧尾状向单一细丝转变。演示了三维着色内雕。

Synthesis and luminescence of ZnMgS : Mn2+ nanoparticles

Efficient green emission from ZnMgS:Mn2+ nanoparticles prepared by co-doping Mg2+ and Mn2+ ions into ZnS lattices has been observed. The synthesis is carried out in aqueous solution, followed by a post-annealing process, thus showing the features of less complexity, low cost, and easy incorporation of dopants. In comparison with the emission of ZnS:Mn2+ nanoparticles, which is located generally around 590 nm, the photoluminescence of ZnMgS:Mn2+ nanoparticles is blue-shifted by 14 nm in wavelength, leading to the enhanced green emission. The X-ray diffraction, electron spin resonance, and pressure dependent photoluminescence measurements suggest that the change of the crystal field caused by Mg2+ ionic doping and the lower symmetry in the nanoparticles may account for the blue-shift of the photoluminescence. The ZnMgS:Mn2+ nanoparticles with 1% Mn2+ doping exhibit the strongest luminescence, which could potentially meet the requirements for the construction of green light emitting diodes.

THEORETICAL INVESTIGATION OF THE DYNAMIC PROCESS OF THE ILLUMINATION OF GAAS

The dynamic process of light illumination of GaAs is studied numerically in this paper to understand the photoquenching characteristics of the material. This peculiar behavior of GaAs is usally ascribed to the existence of EL2 states and their photodriven metastable states. To understand the conductivity quenching, we have introduced nonlinear terms describing the recombination of the nonequilibrium free electrons and holes into the calculation. Though some photoquenching such as photocapacitance, infrared absorption, and electron-paramagnetic-resonance quenching can be explained qualitatively by only considering the internal transfer between the EL2 state and its metastability, it is essential to take the recombination into consideration for a clear understanding of the photoquenching process. The numerical results and approximate analytical approach are presented in this paper for the first time to our knowledge. The calculation gives quite a reasonable explanation for n-type semiconducting GaAs to have infrared absorption quenching while lacking photoconductance quenching. Also, the calculation results have allowed us to interpret the enhanced photoconductance phenomenon following the conductance quenching in typical semi-insulating GaAs and have shown the expected thermal recovery temperature of about 120 K. The numerical results are in agreement with the reported experiments and have diminished some ambiguities in previous works.

氦离子注入4H-SiC晶体的纳米硬度研究；Study on nanohardness of helium-implanted 4H-SiC

4H-SiC晶体经能量为100keV,剂量为3×1016cm-2的氦离子高温(500K)注入后,再在773—1273K温度范围内进行了退火处理,最后使用纳米压痕仪测量了样品注入面的硬度.测试结果表明,在500—1273K温度范围内样品的硬度随退火温度升高呈现先增大后减小再增大的趋势,其中773K退火样品的硬度增大明显.分析认为,退火样品的硬度变化是由退火过程中缺陷复合与氦泡生长导致样品内部的Si—C键密度、键长和键角改变引起的.