Effect of small-angle scattering on the integer quantum Hall plateau

A GaAs/AlGaAs two-dimensional electron gas (2 DEG) structure with the high mobility of mu(2K) = 1.78 x 10(6) cm(2)/Vs has been studied by low-temperature Hall and Shubnikov de Hass (SdH) measurements. Quantum lifetimes related to all-angle scattering events reduced from 0.64 ps to 0.52 ps after illuminating by Dingle plots, and transport lifetimes related to large-angle scattering events increasing from 42.3 ps to 67.8 ps. These results show that small-angle scattering events become stronger. It is clear that small-angle scattering events can cause the variation of the widths of the quantum Hall plateaus.

Photoluminescence and Raman scattering of silicon nanocrystals prepared by silicon ion implantion into SiO2 films

Photoluminescence (PL) and Raman spectra of silicon nanocrystals prepared by Si ion implantion into SiO2 layers on Si substrate have been measured at room temperature. Their dependence on annealing temperature was investigated in detail. The PL peaks observed in the as-implanted sample originate from the defects in SiO2 layers caused by ion implantation. They actually disappear after thermal annealing at 800 degrees C. The PL peak from silicon nanocrystals was observed when thermal annealing temperatures are higher than 900 degrees C. The PL peak is redshifted to 1.7 eV and the intensity reaches maximum at the thermal annealing temperature of 1100 degrees C. The characterized Raman scattering peak of silicon nanocrystals was observed by using a right angle scattering configuration. The Raman signal related to the silicon nanocrystals appears only in the samples annealed at temperature above 900 degrees C. It further proves the formation of silicon nanocrystals in these samples. (C) 2000 American Institute of Physics. [S0021-8979(00)00215-2].

Raman scattering in hexagonal GaN epitaxial layer grown on MgAl2O4 substrate

The room temperature Raman spectra of the hexagonal GaN epilayer grown on [111]- oriented MgAl2O4 substrate were measured in various backscattering and right angle scattering geometries. All of the symmetry-allowed optical phonon modes were observed except the E-2 (low frequency) mode. The quasitransverse and quasilongitudinal modes were also observed in the x(zx)z and x(yy)z configurations, which are the mixed modes of pure transverse and longitudinal modes with A(1) and E-1 symmetry, respectively. (C) 1999 American Institute of Physics. [S0021-8979(99)01416-4].

适用于中等耦合等离子体的碰撞算子

完全电离等离子体中，当试探粒子分布函数fα是关于试探粒子速度vα的偶函数时，导出了一个新的动力学方程的碰撞算子．该碰撞算子同时包括了大角散射（库仑近碰撞）和小角散射（库仑远碰撞）的二体碰撞的贡献，因此，该碰撞算子同时适用于弱耦合（库仑对数ln∧≥10）和中等耦合（库仑对数2≤ln∧≤10）等离子体．而且经过修改的碰撞算子和Rosenbluth势有直接的联系，当试探粒子和场粒子满足条件mα＜mβ（如电子-离子碰撞或Lorentz气体模型）和｜vα｜〉｜vβ｜时，经约化的电子-离子碰撞算子同最初的Fokker

激光尘埃粒子计数器微型光学传感器的研究

研制成功便携式激光尘埃粒子计数器的核心部件——微型光学传感器。该传感器采用直角散射光收集形式。以高功率半导体激光器作为光源，同时采用高性能的PIN型光电二极管作为光电探测器。散射光收集系统为单一大数值孔径的球面反射镜，其对粒子散射光的收集角范围从20°到160°。粒子散射光信号是脉冲信号，其频谱成份主要在高频段，所以在PIN型光电二极管后用一个带通式前置放大器来消除外界的低频噪声．根据米氏散射理论计算了该光学传感器的光散射响应特性，并用聚苯乙烯标准粒子实测了该光学传感器的性能。结果表明，该系统具有高的信噪

Electron transport properties of In0.53Ga0.47As/In0.52Al0.48As quantum wells with two occupied subbands

Magnetotransport properties of two-dimensional electron gas have been investigated for three In0.53Ga0.47As/In0.52Al0.48As quantum well samples having two occupied subbands with different well widths. When the intersubband scattering is considered, we have obtained the subband density, transport scattering time, quantum scattering time and intersubband scattering time, respectively, by analyzing the result of fast Fourier transform of the first derivative of Shubnikov-de Haas oscillations. It is found that the main scattering mechanism is due to small-angle scattering, such as ionized impurity scattering, for the first subband electrons.

Optical properties of nanometer silicon prepared by silicon ion implanted into SiO2 layers

The samples of silicon nanocrystals (nc-Si) were prepared by Si ion implanted into SiO2 layers. Photoluminescence spectra were measured at room temperature and their dependence on thermal annealing was investigated. The experimental results show that PL peaks originate from the defects in SiO2 layers caused by ion implantation when the thermal annealing temperature is lower than 800 C. The PL peak from nc-Si was observed when the thermal annealing temperature was higher than 900 C, and PL intensity reached its maximum at the thermal annealing temperature of 1100 C. As the annealing temperature increases the red shift of PL peak from nc-Si shows the quantum size effect. The characterized Raman scattering peak of nc-Si was observed at the right angle scattering configuration for the first time. It provides further support for the PL measurements.

Vacuum window of intermediate energy heavy-ion microbeam irradiation facility

The beam must be extracted into the air through the vacuum window to irradiate the living cell. In the window design, the material and thickness must be chosen to compromise the beam spot size broadening and the window safety. The structure-static analysis on the window of different structures and materials is done with the finite element analysis method, and the deformation and the equivalent stress axe simulated. The safety of these candidates is investigated using the intensity theory. In addition, the small angle scattering and the transverse range of ions are simulated using SRIM code, including all the effects on the beam spot size broadening, such as the incident ion energy, the material and the thickness of the window and the air composing. At last, the appropriate vacuum windows are presented, including the structure, material and thickness.

Ab initio calculations of differential cross sections for single charge transfer in He-3(2+)+He-4 collisions

The single charge transfer process in He-3(2+)+He-4 collisions is investigated using the quantum-mechanical molecular-orbital close-coupling method, in which the adiabatic potentials and radial couplings are calculated by using the ab initio multireference single- and double-excitation configuration interaction methods. The differential cross sections for the single charge transfer are presented at the laboratorial energies E = 6 keV and 10 keV for the projectile He-3(2+). Comparison with the existing data shows that the present results are better in agreement with the experimental measurements than other calculations in the dominant small angle scattering, which is attributed to the accurate calculations of the adiabatic potentials and the radial couplings.

Evidence of strong projectile-target-core interaction in single ionization of neon by electron impact

The momentum distributions of recoil ions were measured in the single ionization of neon by electron impact at incident energies between 80 and 2300 eV. It was found that there are a noticeable number of recoil ions carrying large momenta, and the relative contributions of these ions becomes more pronounced with the further decrease of incident electron energy. These observed behaviors indicate that there is a strong projectile-target-core interaction in the single-ionization reaction. By comparing our results with those of electron-neon elastic scattering, we concluded that the elastic scattering of the projectile electron on the target core plays an important role at low and intermediate collision energies.

The Compact Pulsed Hadron Source: A Design Perspective

During the past. decades, large-scale national neutron sources have been developed in Asia, Europe, and North America. Complementing such efforts, compact hadron beam complexes and neutron sources intended to serve primarily universities and industrial institutes have been proposed, and some have recently been established. Responding to the demand in China for pulsed neutron/proton-beam platforms that are dedicated to fundamental and applied research for users in multiple disciplines from materials characterization to hadron therapy and radiography to accelerator-driven sub-critical reactor systems (ADS) for nuclear waste transmutation, we have initiated the construction of a compact, yet expandable, accelerator complex-the Compact Pulsed Hadron Source (CPHS). It consists of an accelerator front-end (a high-intensity ion source, a 3-MeV radio-frequency quadrupole linac (RFQ), and a 13-MeV drift-tube linac (DTL)), a neutron target station (a beryllium target with solid methane and room-temperature water moderators/reflector), and experimental stations for neutron imaging/radiography, small-angle scattering, and proton irradiation. In the future, the CPHS may also serve as an injector to a ring for proton therapy and radiography or as the front end to an ADS test facility. In this paper, we describe the design of the CPHS technical systems and its intended operation.

SAXS measurements of the interface in polyacrylate and epoxy interpenetrating networks with fractal geometry

The interface thickness in two-component interpenetrating polymer networks (IPN) system based on polyacrylate and epoxy were determined using small-angle X-ray scattering (SAXS) in terms of the theory proposed by Ruland. The thickness was found to be nonexistent for the samples at various compositions and synthesized at variable conditions-temperature and initiator concentration. By viewing the system as a two-phase system with a sharp boundary, the roughness of the interface was described by fractal dimension, D, which slightly varies with composition and synthesis condition. Length scales in which surface fractals are proved to be correct exist for each sample and range from 0.02 to 0.4 Angstrom(-1). The interface in the present IPN system was treated as fractal, which reasonably explained the differences between Pored's law and experimental data, and gained an insight into the interaction between different segments on the interface. (C) 1997 Elsevier Science Ltd.

Small angle X-ray scattering of the colloidal crystal

The monodisperse polystyrene spheres are assembled into the colloidal crystal on the glass substrate by vertical deposition method, which is aimed at the so-called photonic crystal applications. The structural information of the bulk colloidal crystal is crucial for understanding the crystal growth mechanism and developing the various applications of colloidal crystal. Small-angle X-ray scattering (SAXS) technique was used to obtain the bulk structure of the colloidal crystal at Beamline 1W2A of BSRF. It is found that the SAXS pattern is sensitive to the relative orientation between the colloidal sample and the incident X-ray direction. The crystal lattice was well distinguished and determined by the SAXS data.

The microstructure of hydrogenated microcrystalline silicon thin films studied by small-angle x-ray scattering

The microstructures of hydrogenated microcrystalline silicon (tic-Si: H) thin films, prepared by plasma-enhanced chemical vapor deposition (PECVD), hot wire CVD(HWCVD) and plasma assisted HWCVD (PE-HWCVD), have been analyzed by the small angle x-ray scattering(SAXS) measurement. The SAXS data show that the microstructures of the μ c-Si: H films display different characteristics for different deposition techniques. For films deposited by PECVD, the volume fraction of micro-voids and mean size are smaller than those in HWCVD sample. Aided by suitable ion-bombardment, PE-HWCVD samples show a more compact structure than the HWCVD sample. The microstructure parameters of the μ c-Si: H thin films deposited by two-steps HWCVD and PE-HWCVD with Ar ions are evidently improved. The result of 45° tilting SAXS measurement indicates that the distribution of micro-voids in the film is anisotropic. The Fouriertransform infrared spectra confirm the SAXS data.