Stress evolution influenced by oxide charges on GaN metal-organic chemical vapor deposition on silicon-on-insulator substrate

GaN epilayers have been deposited on silicon-on-insulator (SOI) and bulk silicon substrates. The stress transition thickness and the initial compressive stress of a GaN epilayer on the SOI substrate are larger than those on the bulk silicon substrate, as shown in in situ stress measurement results. It is mainly due to the difference of the three-dimensional island density and the threading dislocation density in the GaN layer. It can increase the compressive stress in the initial stage of growth of the GaN layer, and helps to offset the tensile stress generated by the lattice mismatch.

对DES的Rectangle攻击和Boomerang攻击

作为加密标准，DES（data encryption standard）算法虽然已被AES（advanced encryption standard）算法所取代，但其仍有着不可忽视的重要作用．在一些领域，尤其是金融领域，DES和Triple DES仍被广泛使用着．而近年来又提出了一些新的密码分析方法，其中，Rectangle攻击和Boomerang攻击已被证明是非常强大而有效的．因此，有必要重新评估DES算法抵抗这些新分析方法的能力．研究了DES算法针对Rectangle攻击和Boomerang攻击的安全性．利用DES各轮最优差分路径及其概率，分别得到了对12轮DES的Rectangle攻击和对11轮DES的Boomerang攻击．攻击结果分别为：利用Rectangle攻击可以攻击到12轮DES，数据复杂度为2~(62)。个选择明文，时间复杂度为2~(42)次12轮加密；利用Boomerang攻击可以攻击到11轮DES，数据复杂度为2~(58)个适应性选择明密文，时间复杂度为2~(38)次11轮加密．由于使用的都是DES各轮的最优差分路径，所以可以相信，该结果是Rectangle攻击和Boomerang攻击对DES所能达到的最好结果．

STUDY OF THE LONG-TERM STABILITY OF THE EFFECTIVE CONCENTRATION OF IONIZED SPACE CHARGES (N-EFF) OF NEUTRON-IRRADIATED SILICON DETECTORS FABRICATED BY VARIOUS THERMAL-OXIDATION PROCESSES

Experimental study of the reverse annealing of the effective concentration of ionized space charges (N-eff, also called effective doping or impurity concentration) of neutron irradiated high resistivity silicon detectors fabricated on wafers with various thermal oxides has been conducted at room temperature (RT) and elevated temperature (ET). Various thermal oxidations with temperatures ranging from 975 degrees C to 1200 degrees C with and without trichlorethane (TCA), which result in different concentrations of oxygen and carbon impurities, have been used. It has been found that, the RT annealing of the N-eff is hindered initially (t < 42 days after the radiation) for detectors made on the oxides with high carbon concentrations, and there was no carbon effect on the long term (t > 42 days after the radiation) N-eff reverse annealing. No apparent effect of oxygen on the stability of N-eff has been observed at RT. At elevated temperature (80 degrees C), no significant difference in annealing behavior has been found for detectors fabricated on silicon wafers with various thermal oxides. It is apparent that for the initial stages (first and/or second) of N-eff reverse annealing, there may tie no dependence on the oxygen and carbon concentrations in the ranges studied.

Contributions of qqqq(q)over-bar Components to Axial Charges of Proton and N(1440)

The axial charges of the proton and N(1440) are studied in the framework of an extended constituent quark model (CQM) including qqqq (q) over bar components. The cancellation between the contributions of qqq components and qqqq (q) over bar components gives a natural explanation to the experimental value of the proton axial charge, which can not be well reproduced in the traditional CQM even after the SU (6) circle times O(3) symmetry breaking is taken into account. The experimental value of axial charge pins down the proportion of the qqqq (q) over bar component in the proton to about 20%, which is consistent with the ones given by the strong decay widths and helicity amplitudes. Besides, an axial charge for N(1440) about 1 is predicted with 30% qqqq (q) over bar component, which is obtained by the strong and electromagnetic decays.

Conformational and orientational analyses of 2,2 '-bithiophene under interaction of external electric field constructed by point charges

The fully relaxed single-bond torsional potentials and orientation-related rotational potentials of 2,2'-bithiophene (BT) under the interaction of an external electric field (EF) constructed by point charges have been evaluated with semi-empirical AMI and PM3 calculations. The torsional potentials are sensitive to both EF strength and direction. While the EF is parallel to the molecular long axis, the torsional barrier around C-x-C-x' bond obviously rises with increasing the EF strength, whereas the relative energies of syn and anti minima show a slight change. The interaction between the EF and the induced dipole moment has been proposed to elucidate this observation. On the other hand, the relative energy difference between the syn and anti minima shows an obvious change, while the EF is perpendicular to the molecular long axis. This feature has been ascribed to the interaction between the EF and the permanent dipole moment of BT. Furthermore, conformational and orientational analyses in two dimensions have been carried out by changing the torsional and rotational angles in the different EF. The conformation and orientation of a gas-phase BT in the EF are governed by both the above factors.

Conformational analysis of 2,2 '-bithiophene under interaction of external electric field defined by point charges

Conformational analysis of 2,2'-bithiophene (BT) under the influence of an electric field (EF) constructed by point charges has been performed by using semi-empirical Austin Model 1 (AM1) and Parametric model number 3 (PM3) calculations. When the EF perpendicular to the molecular conjugation chain is applied, both AM1 and PM3 calculations show an energy increase of the anti-conformation. AM1 predicts that the global minimum shifts to syn-conformation when the EF strength is larger than a critical value. and PM predicts that the local minimum in anti-conformation vanishes. This kind of EF effect has been ascribed to the EF and dipole moment interaction.