基于结构化Fisherface的人脸识别新方法

特征提取是人脸识别中一个关键步骤。传统的Fisherface人脸识别方法中用样本的类均值和总体均值定义相应的散布矩阵，丢失了样本个体之间的结构信息，本文提出了一种基于原始样本个体结构信息的结构化Fisherface人脸识别方法，最后得到的特征数据中保留了原始样本更多的分布信息。在ORL人脸数据库的实验结果验证了该方法的有效性。

Significant Residue Features Revealed By Eigenvalue Decomposition Analysis Of Blosum Matrices

Here we attempt to characterize protein evolution by residue features which dominate residue substitution in homologous proteins. Evolutionary information contained in residue substitution matrix is abstracted with the method of eigenvalue decomposition. Top eigenvectors in the eigenvalue spectrums are analyzed as function of the level of similarity, i.e. sequence identity (SI) between homologous proteins. It is found that hydrophobicity and volume are two significant residue features conserved in protein evolution. There is a transition point at SI approximate to 45%. Residue hydrophobicity is a feature governing residue substitution as SI >= 45%. Whereas below this SI level, residue volume is a dominant feature. (C) 2007 Elsevier B.V. All rights reserved.

Robust Nanoadhesion Under Torque

In this article, optimization of shear adhesion strength between an elastic cylindrical fiber and a rigid substrate under torque is studied. We find that when the radius of the fiber is less than a critical value, the bonding-breaking along the contact interface occurs uniformly, rather than by mode III crack propagation. Comparison between adhesion models under torque and tension shows that nanometer scale of fibers may have evolved to achieve optimization of not only the normal adhesive strength but also the shear adhesive strength in tolerance of possible contact flaws.

75 mW robust single frequency Yb-doped DFB fiber Bragg grating laser

Incorporating the shielded method and post-processing method, a 75 mW single frequency Yb-doped DFB fiber laser was obtained with a 250 mW laser diode pump source at 978 nm. The threshold of the laser is 2 mW. The laser is single-polarization operation and the output power fluctuation is less than 0.2 mW in one hour when the pump power is 250 mW.

On diagonal-Schur complements of block diagonally dominant matrices

It is known that the diagonal-Schur complements of strictly diagonally dominant matrices are strictly diagonally dominant matrices [J.Z. Liu, Y.Q. Huang, Some properties on Schur complements of H-matrices and diagonally dominant matrices, Linear Algebra Appl. 389 (2004) 365-380], and the same is true for nonsingular H-matrices [J.Z. Liu, J.C. Li, Z.T. Huang, X. Kong, Some properties of Schur complements and diagonal-Schur complements of diagonally dominant matrices, Linear Algebra Appl. 428 (2008) 1009-1030]. In this paper, we research the properties on diagonal-Schur complements of block diagonally dominant matrices and prove that the diagonal-Schur complements of block strictly diagonally dominant matrices are block strictly diagonally dominant matrices, and the same holds for generalized block strictly diagonally dominant matrices. (C) 2010 Elsevier Inc. All rights reserved.

Some new bounds on eigenvalues of the Hadamard product and the Fan product of matrices

Let A and B be nonsingular M-matrices. A lower bound on the minimum eigenvalue q(B circle A(-1)) for the Hadamard product of A(-1) and B, and a lower bound on the minimum eigenvalue q(A star B) for the Fan product of A and B are given. In addition, an upper bound on the spectral radius rho(A circle B) of nonnegative matrices A and B is also obtained. These bounds improve several existing results in some cases and the estimating formulas are easier to calculate for they are only depending on the entries of matrices A and B. (C) 2009 Elsevier Inc. All rights reserved.

A comparison of silicon oxide and nitride as host matrices on the photoluminescence from Er3+ ions

This paper compares the properties of silicon oxide and nitride as host matrices for Er ions. Erbium-doped silicon nitride films were deposited by a plasma-enhanced chemical-vapour deposition system. After deposition, the films were implanted with Er3+ at different doses. Er-doped thermal grown silicon oxide films were prepared at the same time as references. Photoluminescence features of Er3+ were inspected systematically. It is found that silicon nitride films are suitable for high concentration doping and the thermal quenching effect is not severe. However, a very high annealing temperature up to 1200 degrees C is needed to optically activate Er3+ which may be the main obstacle to impede the application of Er-doped silicon nitride.

A 16-term error model based on linear equations of voltage and current variables

Formulation of a 16-term error model, based on the four-port ABCD-matrix and voltage and current variables, is outlined. Matrices A, B, C, and D are each 2 x 2 submatrices of the complete 4 x 4 error matrix. The corresponding equations are linear in terms of the error parameters, which simplifies the calibration process. The parallelism with the network analyzer calibration procedures and the requirement of five two-port calibration measurements are stressed. Principles for robust choice of equations are presented. While the formulation is suitable for any network analyzer measurement, it is expected to be a useful alternative for the nonlinear y-parameter approach used in intrinsic semiconductor electrical and noise parameter measurements and parasitics' deembedding.

Simulation of single electronic device and robust circuit construction

The article mainly focuses on the simulation of the single electron device and circuit. The orthodox model of single electronic device is introduced and the simulation with Matlab and Pspice is illustrated in the article. Moreover, the built of robust circuit using single electronic according to neural network is done and the simulation is also included in the paper. The result shows that neural network added with proper redundancy is an available candidate for single electron device circuit. The proposed structure is also promising for the realization of low ultra-low power consumption and solution of transient device failure.

Composition Optimization of Tellurite Glass for Low-Loss and Robust Fiber Fabrication

低损耗高强度碲酸盐玻璃光纤用光学材料的优化方案

Calculation of the band structure of semiconductor quantum wells using scattering matrices

The transfer-matrix method widely used in the calculation of the band structure of semiconductor quantum wells is found to have limitations due to its intrinsic numerical instability. It is pointed out that the numerical instability arises from free-propagating transfer matrices. A new scattering-matrix method is developed for the multiple-band Kane model within the envelope-function approximation. Compared with the transfer-matrix method, the proposed algorithm is found to be more efficient and stable. A four-band Kane model is used to check the validity of the method and the results are found to be in good agreement with earlier calculations.