60 resultados para Reliures au chiffre de Charles X

em Chinese Academy of Sciences Institutional Repositories Grid Portal


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于2010-11-23批量导入

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本实验工作是在兰州重离子加速器国家实验室ECR离子源完成。实验采用能量为336keV的低能高电荷态Ar16+离子轰击Au、Mo金属靶,入射离子与靶表面之间的夹角分别是20°,25°,……,80°,入射角与出射角之和为90°。测量了不同角度下Mo的Lα、Lβ,Au的Mα和Ar的Kα特征X射线谱,对实验谱进行了高斯拟合,计算了不同入射角下的各条X射线的产额和产生截面,并将靶原子发射出的X射线截面与ECPSSR和带结合能修正的BEA理论计算的结果进行了比较。发现当入射角较小时,Ar16+与金属靶相互作用时所产生出的各条特征X射线截面随入射角的增加而增加,当入射角达到40°左右后X射线截面基本上保持不变。与ECPSSR计算值相比,本实验中AuX射线截面比较接近,实验值比ECPSSR计算值小不到一个量级;而Mo的X射线截面实验值比ECPSSR计算值大3-4个量级,但产额与带结合能修正的BEA计算值很接近

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在北京13 MV串列加速器上利用20—50MeVO5+离子研究Au的L壳层X射线产生截面.实验结果表明σ(Ll)/σ(Lα),σ(Lβ)/σ(Lα)和σ(Lγ)/σ(Lα)与ECPSSR理论计算结果符合比较好.在实验中由于较高的能量,在能量点存在能移现象.

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研究了高电荷态离子40Arq+(q=7—14)轰击金属Au表面产生的特征X射线谱。实验结果表明,在弱束流(nA量级)的情况下,对于动能相同的入射离子,当电荷态比较高(q=11)时,便能有效地激发靶原子的特征X射线,单离子的X射线产额高达10-8量级。分析结果显示,入射离子的势能、动能和这种相互作用特有的镜像相互作用势能沉积在靶表面,使靶原子内壳层电子激发和电离,形成空穴和产生外壳层电子填充空穴辐射特征X射线,特征X射线的产额随入射离子的势能(电荷态)的增加而增加。

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研究了高电荷态离子129Xe28+轰击金属Au和Mo表面产生的特征X射线谱。实验结果表明,在入射离子的电荷态和能量相同的条件下,对于核电荷数较小、原子质量较轻的靶原子,只有其内壳层的电子才能被激发而产生X射线,而核电荷数较大、原子质量较重的靶原子只有其较外壳层的电子能被激发而产生X射线。特征X射线的产额随入射离子动能的增加而增加。

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目的研究高电荷态离子129Xeq+(q=28,29,30)入射金属Au表面产生的特征X射线谱。方法应用高电荷态离子束流激发。结果在束流强度小于139 nA条件下,单离子的X射线产额可达10-8量级,特征X射线的产额随入射离子的动能和势能(电荷态)的增加而增加。结论与传统的X射线产生方法不同,高电荷态离子可以激发重原子的内壳层特征X射线谱,其产额高,品质好。

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利用光谱技术研究了高电荷态离子40Arq+(q=16,17,18)离子入射金属Au表面产生的X射线谱.分析结果表明,Ar的Kα-X射线是离子在与固体表面相互作用过程中在固体表面之下形成的空心原子发射的.当电子组态为1s2的高电荷态Ar16+离子在金属表面中性化过程中,存在着多电子激发过程使Ar16+的K壳层电子激发产生空穴,进而级联退激发射Ar的Kα特征X射线.入射离子的Kα-X射线产额与其最初的电子组态有关,靶原子的X射线产额与入射离子的动能有关.

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在北京13 MV串列加速器上利用20—50MeV O5+离子研究Au的L壳层X射线产生截面. 实验结果表明σ(Ll)/σ(Lα) ,σ(Lβ)/σ(Lα) 和σ(Lγ)/σ(Lα)与ECPSSR理论计算结果符合比较好.在实验中由于较高的能量,在能量点存在能移现象.

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By use of optical spectrum technology, the spectra of X-ray induced by highly charged Ar-40(q+) ions interacting with Au surface have been studied. The results show that the argon K alpha X-ray were emitted from the hollow atoms formed below the surface. There is a process of multi-electron exciting in neutralization of the Ar16+ ion, with electronic configuration 1s(2) in its ground state below the solid surface. The yield of the projectile K alpha X-ray is related to its initial electronic configuration, and the yield of the target X-ray is related to the projectile kinetic energy.

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The adsorption Of DL-homocysteine (Hcy) and L-homocysteine thiolactone (HTL) on Au(1 1 1) electrode was investigated in 0.1 M HClO4 by cyclic voltammetry and in situ scanning tunneling microscopy (STM). Hcy and HTL molecules formed highly ordered adlayers on Au(1 1 1) surface. High-resolution STM images revealed the orientation and packing arrangement in the ordered adlayers. Hcy molecules formed (2root3 x 3root3)R30degrees adlayer structure and H-bonds between carboxyl groups were assumed to be responsible for the origin of tail-to-tail or head-to-head molecular arrangement, while HTL molecules formed (4 x 6) adlayer structure, and two different orientations and appearances in the ordered adlayer were found. Structural models were proposed for the two adlayers.

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MeV An irradiation leads to a shape change of polystyrene (PS) and SiO2 particles from spherical to ellipsoidal, with an aspect ratio that can be precisely controlled by the ion fluence. Sub-micrometer PS and SiO2 particles were deposited on copper substrates and irradiated with Au ions at 230 K, using an ion energy and fluence ranging from 2 to 10 MeV and 1 x 10(14) ions/cm(2) to 1 x 10(15) ions/cm(2). The mechanisms of anisotropic deformation of PS and SiO2 particles are different because of their distinct physical and chemical properties. At the start of irradiation, the volume of PS particles decrease, then the aspect ratio increases with fluence, whereas for SiO2 particles the volume remains constant. (C) 2008 Elsevier B.V. All rights reserved.

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Au colloids were prepared by irradiation with a Nd:YAG laser. Au nanoparticles were characterized by absorption spectra, transmission electron microscopy (TEM) and X-ray diffraction (XRD) analysis. It is found that the wavelength of the laser has no effect on the size but the number of the Au nanoparticles. By irradiating a transparent silica gel doped with gold ions with the focused laser in the gel and subsequent exposing in air, a space-selective pattern of letter "P" consisting of Au nanoparticles was observed inside the silica gel.

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Au nanoparticles, which were photoreduced by a Nd:YAG laser in HAuCl4 solution containing TiO2 colloid and accompanied by the TiO2 particles, were deposited on the substrate surface. The film consisting of Au/TiO2 particles was characterized by the absorption spectra, scanning electron microscopy (SEM) and X-ray diffraction (XRD) analysis. The adhesion between the film and substrate was evaluated by using adhesive tape test. It was found that the presence of TiO2 dramatically enhanced the adhesion strength between the film and the substrate, as well as the deposition rate of film. The mechanism for the deposition of Au/TiO2 film was also discussed. (c) 2005 Elsevier B.V. All rights reserved.

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We obtain Au and Ag nanoparticles precipitated in glasses by irradiation of focused femtosecond pulses, and investigate the nonlinear absorptions of the glasses by using Z-scan technique with ns pulses at 532 nm. We observe the saturable absorption behavior for An nanoparticles precipitated glasses and the reverse saturable ones for Ag ones. We also obtain, by fitting to the experimental results in the light of the local field effect near and away from the surface plasmon resonance, chi(m)((3)) = 4.5 x 10(-7) and 5.9 x 10(-8) esu for m the imaginary parts of the third-order susceptibilities for Au and Ag nanoparticles, respectively. The nonlinear response of Au nanoparticles in the glass samples arises mainly from the hot-electron contribution and the saturation of the interband transitions near the surface plasmon resonance, whereas that of Ag nanoparticles in the glass samples from the interband transitions. These show that the obtained glasses can be used as optoelectronic devices suiting for different demands. (c) 2005 Elsevier B.V. All rights reserved.

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Under identical preparation conditions, Au/GaN Schottky contacts were prepared on two kinds of GaN epilayers with significantly different background electron concentrations and mobility as well as yellow emission intensities. Current-voltage (I-V) and variable-frequency capacitance-voltage (C-V) characteristics show that the Schottky contacts on the GaN epilayer with a higher background carrier concentration and strong yellow emission exhibit anomalous reverse-bias I-V and C-V characteristics. This is attributed to the presence of deep level centers. Theoretical simulation of the low-frequency C-V curves leads to a determination of the density and energy level position of the deep centers. (c) 2006 American Institute of Physics.