烟草依赖者的注意偏向研究

Relapse has been a great challenge in clinical treatment and experimental studies of drug addiction. Recent studies suggest that psychological dependence may play a major role in addiction relapse, even more important than physiological dependence. Then a fundamental question arises: how to measure the psychological dependence? How to examine whether an addict has psychologically quitted when leaving drug rehabilitation centers? Self-report, a commonly used evaluation approach, is inevitably vulnerable to various cognitive influences, particularly in explicit tasks. Therefore, an objective index is necessary to evaluate the subliminal psychological drug dependence level. The objective of the current study was to develop such a psychological paradigm to probe the unaware attentional bias of in smoking addicts. Experiment 1 adapted the interocular suppression technique of binocular rivalry to study the attentional bias to cigarette pictures in smokers and age-matched nonsmoker. Results show that the smokers demonstrated similar attentional bias in both visible and unaware conditions, while non-smokers showed attentional bias only in the visible condition, and there was a significant interaction between experiment conditions and subject groups. These results provide compelling evidence for addiction-specific attentional bias in cigarette smokers, by minimizing the influence of confounding conscious factors. Furthermore, attentional bias of smokers in unawareness state was negatively correlated with their cigarette dependence levels, while their pre-test cigarette craving levels was positively correlated with their attnetional bias in the visible condition. This pair of correlations further demonstrated the advantages of unawareness state in disclosing stable dependence states, therefore supporting the effectiveness of the paradigm used in this study. Another interesting finding of Experiment 1 is that non-smokers also showed attentional bias in the visible condition. To exclude the possibility that the attentional bias found in experiment 1 was task-specific, experiment 2 adapted the most commonly-used visual dot probe task with smoking scenes as in relevant reference. The result in experiment 1 was well replicated, i.e., nonsmokers in experiment 2 also showed significant attentional bias to smoking-related stimuli, We interpenetrate this interesting finding as an effect of environmental influence, as the participants of the current study live in a highly smoking-exposed and smoking-encouraged environment, which is quite different with the participants of studies reported in the literature. A series of questionnaires and scales administered in the current study indeed show that most smokers smoked due to influence of the environment. They also acknowledged that smoking as an important media of social communication in China, and even considered that away from the smoking environment would effectively help them to quit. The current study also found that the disgust level towards cigarette pictures and smoking-related scenes of non-smokers was positively correlated with their attnentional bias in the visible condition of experiment 1. It is likely that in a highly smoking-encouraged environment, the remaining few on-smokers have severe disgust to cigarettes and smoking scenes; and their attentional bias might be caused by disgust avoidance. In conclusion, the current study represents the first study showing the existence of unaware attentional bias to smoking related stimuli in cigarette smokers by applying the interocular suppression paradigm, providing a reference to study of dependence of other drugs. The current study also found that our non-smoking participants also showed attentional bias to smoking related stimuli, which may be due to the possible influence of highly smoking-exposed environment of our participants.

Gamma-ray induced color centers in Yb : YAG crystals grown by Czochralski method

20 at.% Yb:YAG single crystals have been grown by the CZ method and gamma-ray irradiation induced color centers and valence change of Fe3+ and Yb3+ ions in Yb:YAG have been studied. One significant 255 nm absorption band was observed in as-grown crystals and was attributed to Fe3+ ions. Two additional absorption (AA) bands located at 255 nm and 345 nm, respectively, were produced after gamma irradiation. The changes in the AA spectra after gamma irradiation and air annealing are mainly related to the charge exchange of the Fe3+, Fe2+, oxygen vacancies and F-type color centers. Analysis shows that the broad AA band is associated with Fe2+ ions and F-type color centers. The transition Yb3+ Yb2+ takes place as an effect of recharging of one of the Yb3+ ions from a pair in the process of gamma irradiation. (C) 2006 Elsevier Ltd. All rights reserved.

Phi 140 mm sapphire crystal growth by temperature gradient techniques and its color centers

Sapphire crystals, 140 mm in diameter and 90 turn in height, have been grown by temperature gradient techniques (TGT). The growth direction of the boule was fixed by means of Lane X-ray diffraction. A prominent 204 nm absorption band in TGT-Al2O3. which does not appear in single crystals grown by Czochralski method has been studied. Analysis further substantiates the F-center model of this band. Two relatively weaker bands absorbing at 232 nm and 254 nm were ascribed to F+ centers. F-type centers concentration was determined using Smakula's equation. (c) 2005 Elsevier B.V. All rights reserved.

Color centers and charge state change in Ce : YAG crystals grown by temperature gradient techniques

Color centers and impurity defects of Ce:YAG crystals grown in reduction atmosphere by temperature gradient techniques have been investigated by means of gamma irradiation and thermal treatments. Four absorption bands associated with color centers or impurity defects at 235, 255, 294 and 370 nm were observed in as-grown crystals. Changes in optical intensity of the 235 and 370 nm bands after gamma irradiation indicate that they are associated with F+-type color center. Charge state change processes of Fe3+ impurity and Ce3+ ions take place in the irradiation process. The variations of Ce3+ ions concentration clearly indicate that Ce4+ ions exist in Ce:YAG crystals and gamma irradiations could increase the concentration of Ce3+ ions. Annealing treatments and the changes in optical density suggest that a heterovalent impurity ion associated with the 294 nm band seems to be present in the crystals. (c) 2005 Elsevier B.V. All rights reserved.

Color centers and charge state recharge in gamma-irradiated Yb : YAP

Gamma-ray irradiation induced color centers and charge state recharge of impurity and doped ion in 10 at.% Yb:YAP have been studied. The change in the additional absorption (AA) spectra is mainly related to the charge exchange of the impurity Fe2+, Fe3+ and Yb3+ ions. Two impurity color center bands at 255 and 313 nm were attributed to Fe3+ and Fe2+ ions, respectively. The broad AA band centered at 385 nm may be associated with the cation vacancies and F-type center. The transition Yb3+ -> Yb2+ takes place in the process of gamma-irradiation. Oxygen annealing and gamma-ray irradiation lead to an opposite effect on the absorption properties of the Yb:YAP crystal. In the air annealing process, the transition Fe2+ -> Fe3+ and Yb2+ -> Yb3+ take place and the color centers responsible for the 385 nm band was destroyed. (c) 2005 Elsevier B.V. All rights reserved.

Color centers in Yb : YAG crystals grown by temperature-gradient techniques

Yb: YAG (Yb: Y3Al5O12) crystals have been grown by temperature-gradient techniques (TGT) and their color centers and impurity defects were investigated by means of gamma irradiations and thermal treatment. Two color centers located at 255 and 290 nm were observed in the as-grown TGT-Yb: YAG. Analysis shows that the 255 nm band may be associated with Fe3+ ions. Absorption intensity changes of the 290 nm band after gamma irradiation and thermal treatment indicate that this band may be associated with oxygen-vacancy defects. (c) 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Nonradiative recombination centers in Ga(As,N) and their annealing behavior studied by Raman spectroscopy

Nitrogen-related defects in diluted Ga(As,N) have been detected by Raman scattering in resonance with the localized E+ transition. These defects are attributed to local vibrational modes of nitrogen dimers on Ga- and As-lattice sites. Rapid thermal annealing under appropriate conditions is found to be able to remove the nitrogen dimers. The required minimum annealing temperature coincides with the threshold-like onset of strong, near-band-gap photoluminescence. This finding suggests that the nitrogen dimers are connected with nonradiative recombination centers. (C) 2004 American Institute of Physics.

Photoluminescence of Te isoelectronic centers in ZnS : Te under hydrostatic pressure

The photoluminescence of four epitaxial ZnS: Te samples with Te concentration from 0.5% to 3.1% was investigated at different temperature and ambient pressure. Two well-known emission bands related to the isolated Te-1 and Te-2 pair isoelectronic centers were observed for the samples with Te concentrations of 0.5% and 0.65%. For the samples with Te concentrations of 1.4% and 3.1%, only was the Te-2-related peak observed. The pressure behaviors of these emission bands, were studied at 15 K. The Te-1 -related band has faster pressure shift to higher energy than ZnS band gap. On the other hand, the pressure coefficient of Te-2 -related bands is smaller than that of the ZnS band gap. According to a Koster-Slater model, we found that the increase of the density bandwidth of the valence band with pressure is the main reason for the faster shift of the Te-1 centers, while the relatively large difference in the pressure behavior of the Te-1 and Te-2 centers is mainly due to the difference in the pressure-induced enhancement of the impurity potential on Te-1 and Te-2 centers.

Recombination kinetics of Te isoelectronic centers in ZnSTe

The recombination kinetics of Te isoelectronic centers in ZnS1-xTex (0.0065 less than or equal to x less than or equal to 0.85) alloys is studied by time-resolved photoluminescence (TRPL) at low temperature. The measured radiative recombination lifetimes of different Te bound exciton states are quite different, varying from a few nanoseconds to tens of nanosecond. As the bound exciton state evolves from a single Te impurity (Te-1) to larger Te clusters (Te-n, n=2,3,4), the recombination lifetime increases. It reaches maximum (similar to40 ns) for the Te-4 bound states at x=0.155. The increase of the exciton lifetime is attributed to the increasing exciton localization effect caused by larger localization potential. In the large Te composition range (x > 0.155), the exciton recombination lifetime decreases monotonically with Te composition. It is mainly due to the hybridization between the Te localized states and the host valence band states. The composition dependences of the exciton binding energy and the photoluminescence (PL) line width show the similar tendency that further support the localization picture obtained from the TRPL measurement. (C) 2005 American Institute of Physics.