Determination and identification of isoflavonoids in Radix astragali by matrix solid-phase dispersion extraction and high-performance liquid chromatography with photodiode array and mass spectrometric detection

The isoflavonoids in Radix astragali were determined and identified by HPLC-photodiode array detection-MS after extraction employing matrix solid-phase dispersion (MSPD). As a new sample preparation method for R. astragali, the MSPD procedure was optimized, validated and compared with conventional methods including ultrasonic and Soxhlet extraction. The amounts of two major components in this herb, formononetin (6) and ononin (2), were determined based on their authentic standards. Four major isoflavonoids, formononetin (6), ononin (2), calycosin (5) and its glycoside (1), and three minor isoflavonoids, (6aR,11aR)-3-hydroxy-9, 10-dimethoxypterocarpan (7), its glycoside (3), and (3R)-7,2'-dihydroxy-3',4'-dimethoxyisoflavone-7-O-beta-D-glycoside (4), were identified based on their characteristic two-band UV spectra and [M + H](+), [aglycone + H](+) and [A1 + H](+) ions, etc. The combined MSPD and HPLC-DAD-MS method was suitable for quantitative and qualitative determination of the isoflavonoids in R. astragali. (C) 2003 Elsevier B.V. All rights reserved.

Adsorption and reaction of thiophene and H2S on Mo2C/Al2O3 catalyst studied by in situ FT-IR spectroscopy

The reactions of both thiophene and H2S onMo(2)C/Al2O3 catalyst have been studied by in situ FT-IR spectroscopy. CO adsorption was used to probe the surface sites of Mo2C/Al2O3 catalyst under the interaction and reaction of thiophene and H2S. When the fresh Mo2C/Al2O3 catalyst is treated with a thiophene/H-2 mixture above 473 K, hydrogenated species exhibiting IR bands in the regions 2800-3000 cm(-1) are produced on the surface, indicating that thiophene reacts with the fresh carbide catalyst at relatively low temperatures. IR spectra of adsorbed CO on fresh Mo2C/Al2O3 pretreated by thiophene/H-2 at different temperatures clearly reveal the gradual sulfidation of the carbide catalyst at temperatures higher than 473 K, while H2S/H-2 can sulfide the Mo2C/Al2O3 catalyst surface readily at room temperature (RT). The sulfidation of the carbide surface by the reaction with thiophene or H2S maybe the major cause of the deactivation of carbide catalysts in hydrotreating reactions. The surface of the sulfided carbide catalyst can be only partially regenerated by a recarburization using CH4/H-2 at 1033 K. When the catalyst is first oxidized and then recarburized, the carbide surface can be completely reproduced.

Polymerase chain reaction based C4AQ0 and C4BQ0 genotyping: association with systemic lupus erythematosus in southwest Han Chinese

Objective: To investigate the association of complement C4 null genes (C4QO, including C4AQO and C4BQO) and C2 gene with systemic lupus erythematosus (SLE) in southwest Han Chinese; 136 patients with SLE and 174 matched controls were genotyped. Methods: C4 null genes were determined by a polymerase chain reaction (PCR) procedure with sequence specific primers (PCR-SSP). The 2 bp insertion in exon 29, which was previously identified in non-Chinese populations and caused defective C4A genes, was directly typed by sequencing the whole exon 29 using exon specific primers. The exon 6 of complement C2 was also sequenced in both the patients and controls. Results: The frequency of homozygous C4AQO allele was 12.5% (17/136) in patients with SLE compared with 1.1% (2/174) in controls (p<0.001, odds ratio (OR)=12.286, 95% confidence interval (95% CI) 2.786 to 54.170). There was no significant difference for homozygous C4BQO allele between patients with SLE and controls (p=0.699). Patients with the C4AQO gene had an increased risk of acquiring renal disorder, serositis, and anti-dsDNA antibodies compared with those without C4AQO (for renal disorder, p=0.018, OR=8.951, 95% Cl 1.132 to 70.804; for serositis, p=0.011, OR 4.891, 95% CI 1.574 to 15.198; for anti-dsDNA, p=0.004, OR 7.630, 95%Cl 1.636 to 35.584). None of the patients or controls had the 2 bp insertion in exon 29 of the C4 gene. The type I C2 deficiency was not detected in the 3 10 samples. Conclusion: It is suggested that deficiency of C4A (not due to a 2 bp insertion in exon 29), but not C4B or C2, may be a risk factor for acquiring SLE in south west Han Chinese; this results in increased risk of renal disorder, serositis, and anti-dsDNA antibodies in patients with SLE. Racial differences seem to be relevant in susceptibility to SLE.

Nickel complexes catalyzed Heck reaction of iodobenzene and methyl acrylate

Nickel appears the most promising for the replacement of palladium among the inexpensive transition metals for that it is active for Heck reaction and about 500 times cheaper than palladium. In this article, we describe our recent results in the area of nickel-catalyzed Heck vinylations. Main focus is on the influence of ligand concentration in different organic solvents and the effects of the addition of water. The conversion is high in NMP and increases with increasing of PPh3/Ni ratio; in ethanol and toluene the conversion presents a maximum value on Ni(PPh3)(2). The effect of the addition of water is sensitive to the concentration of PPh3 and the nature of solvent, it was well explained with the formation and transfer of the active species in the different solvent systems.

Electron self-exchange reaction of viologen and its derivatives in poly(ethylene glycol)

The electron self-exchange rates (k(ex)) of viologen and its derivatives are estimated by using microelectrode voltammetry in poly(ethylene glycol) films. The dependences of supporting electrolyte concentration and sizes of viologen and its derivatives on k(ex) and diffusion coefficients (D) are discussed. Results show that k(ex) increases with the decrease of supporting electrolyte concentration and sizes of reactants. (C) 2000 Elsevier Science S.A. All rights reserved.

Study on the regulation of diorganogermanium compounds on the Maillard reaction of histidine and glycine by fluorescence spectrum

The suppression of diorganogermanium compounds on the Maillard reaction of histidine (His) and glycine (Gly) with glucose has been determined by fluorescence spectrum under physiological conditions. The title compounds show inhibition for the fluorescence intensity (FI) of glycosylated amino acids stronger than Ge-132.

STUDY ON THE KINETIC PROCESS OF THE COMPLEX-REACTION BETWEEN BILIRUBIN AND CYCLODEXTRINS

The complex behavior of bilirubin (BR) with beta-CD (cyclodextrin) and gamma-CD in aqueous and dimethylformamide (DMF) solution was investigated by absorption spectroscopy and cyclic voltammetry, respectively. The data shows that the complexation mechanis

Ab Initio Study Of Zno-Based Gas-Sensing Mechanisms: Surface Reconstruction And Charge Transfer

Density functional theory (DFT) calculations were employed to explore the gas-sensing mechanisms of zinc oxide (ZnO) with surface reconstruction taken into consideration. Mix-terminated (10 (1) over bar0) ZnO surfaces were examined. By simulating the adsorption process of various gases, i.e., H-2, NH3, CO, and ethanol (C2H5OH) gases, on the ZnO (10 (1) over bar0) surface, the changes of configuration and electronic structure were compared. Based on these calculations, two gas-sensing mechanisms were proposed and revealed that both surface reconstruction and charge transfer result in a change of electronic conductance of ZnO. Also, the calculations were compared with existing experiments.

Ballistic Electron Transport In Hybrid Ferromagnet/Two-Dimensional Electron Gas Sandwich Nanostructure: Spin Polarization And Magnetoresistance Effect

We have theoretically investigated ballistic electron transport through a combination of magnetic-electric barrier based on a vertical ferromagnet/two-dimensional electron gas/ferromagnet sandwich structure, which can be experimentally realized by depositing asymmetric metallic magnetic stripes both on top and bottom of modulation-doped semiconductor heterostructures. Our numerical results have confirmed the existence of finite spin polarization even though only antisymmetric stray field B-z is considered. By switching the relative magnetization of ferromagnetic layers, the device in discussion shows evident magnetoconductance. In particular, both spin polarization and magnetoconductance can be efficiently enhanced by proper electrostatic barrier up to the optimal value relying on the specific magnetic-electric modulation. (C) 2009 American Institute of Physics. [DOI: 10.1063/1.3041477]

Ballistic electron transport in hybrid ferromagnet/two-dimensional electron gas sandwich nanostructure: Spin polarization and magnetoresistance effect

We have theoretically investigated ballistic electron transport through a combination of magnetic-electric barrier based on a vertical ferromagnet/two-dimensional electron gas/ferromagnet sandwich structure, which can be experimentally realized by depositing asymmetric metallic magnetic stripes both on top and bottom of modulation-doped semiconductor heterostructures. Our numerical results have confirmed the existence of finite spin polarization even though only antisymmetric stray field B-z is considered. By switching the relative magnetization of ferromagnetic layers, the device in discussion shows evident magnetoconductance. In particular, both spin polarization and magnetoconductance can be efficiently enhanced by proper electrostatic barrier up to the optimal value relying on the specific magnetic-electric modulation. (C) 2009 American Institute of Physics. [DOI 10.1063/1.3041477]

Gas source molecular beam epitaxy and thermal stability of Si1-xGex/Si superlattice materials

Gas source molecular beam epitaxy has been used to grow Si1-xGex alloys and Si1-xGex/Si multi-quantum wells (MQWs) on (100) Si substrates with Si2H6 and GeH4 as sources. Heterostructures and MQWs with mirror-like surface morphology, good crystalline qualify, and abrupt interfaces have been studied by a variety of in situ and ex situ techniques. The structural stability and strain relaxation in Si1-xGex/Si heterostructures have been investigated, and compared to that in the As ion-implanted Si1-xGex epilayers. The results show that the strain relaxation mechanism of the non-implanted Si1-xGex epilayers is different from that of the As ion-implanted Si1-xGex epilayers.