Quantum measurement of an electron in a disordered potential: Delocalization versus measurement voltages

Quantum point contact (QPC), one of the typical mesoscopic transport devices, has been suggested to be an efficient detector for quantum measurement. In the context of two-state charge qubit, our previous studies showed that the QPC's measurement back-action cannot be described by the conventional Lindblad quantum master equation. In this work, we study the measurement problem of a multistate system, say, an electron in disordered potential, subject to the quantum measurement of the mesoscopic detector QPC. The effect of measurement back-action and the detector's readout current are analyzed, where particular attention is focused on some new features and the underlying physics associated with the measurement-induced delocalization versus the measurement voltages.

Assessment of I-129 measurement at low MV tandem voltages

IEECAS SKLLQG

Correlation between Discharging Property and Coatings Microstructure during Plasma Electrolytic Oxidation

The voltage-current properties during plasma electrolytic discharge were determined by measuring the current density and cell voltage as functions of processing time and then by mathematical transformation. Correlation between discharge I-V property and the coatings microstructure on aluminum alloy during plasma electrolfic oxidation was determined by comparing the voltage-current properties at different process stages with SEM results of the corresponding coatings. The results show that the uniform passive film corresponds to a I-V property with one critical voltage, and a compound of porous layer and shred ceramic particles corresponds to a I-Vproperty with two critical voltages. The growth regularity of PEO cermet coatings was also studied.

Numerical and Analytical Study on the Pull-in Instability of Micro-Structure under Electrostatic Loading

The one-mode analysis method on the pull-in instability of micro-structure under electrostatic loading is presented. Taylor series are used to expand the electrostatic loading term in the one-mode analysis method, which makes analytical solution available. The one-mode analysis is the combination of Galerkin method and Cardan solution of cubic equation. The one-mode analysis offers a direct computation method on the pull-in voltage and displacement. In low axial loading range, it shows little difference with the established multi-mode analysis on predicting the pull-in voltages for three different structures (cantilever, clamped-clamped beams and the plate with four edges simply-supported) studied here. For numerical multi-mode analysis, we also show that using the structural symmetry to select the symmetric mode can greatly reduce both the computation effort and the numerical fluctuation.

Structure and mechanical properties of ceramic coatings fabricated by plasma electrolytic oxidation on aluminized steel

Ceramic coatings were formed by plasma electrolytic oxidation (PEO) on aluminized steel. Characteristics of the average anodic voltages versus treatment time were observed during the PEO process. The micrographs, compositions and mechanical properties of ceramic coatings were investigated. The results show that the anodic voltage profile for processing of aluminized steel is similar to that for processing bulk Al alloy during early PEO stages and that the thickness of ceramic coating increases approximately linearly with the Al layer consumption. Once the Al layer is completely transformed, the FeAl intermetallic layer begins to participate in the PEO process. At this point, the anodic voltage of aluminized steel descends, and the thickness of ceramic coating grows more slowly. At the same time, some micro-cracks are observed at the Al2O3/FeAl interface. The final ceramic coating mainly consists of gamma-Al2O3, mullite, and alpha-Al2O3 phases. PEO ceramic coatings have excellent elastic recovery and high load supporting performance. Nanohardness of ceramic coating reaches about 19.6 GPa. (c) 2007 Elsevier B. V. All rights reserved.

钢基铝镀层转化为陶瓷层的演变规律研究

热浸镀铝钢经等离子体电解氧化（Plasma Electrolytic Oxidation,PEO）处理后,表面铝镀层转化为陶瓷层.实验对阳极电压变化、陶瓷层生长规律、涂层截面形貌和成分等进行了研究.结果表明：在PEO初期,热浸铝试件的阳极电压变化趋势与纯铝试件相同,在PEO后期电压有下降趋势.铝镀层消耗和陶瓷层厚度增长近似为线性变化.当铝镀层完全陶瓷化后,FeAl层参与PEO反应,但陶瓷层生长速率变慢,在界面处出现大量裂纹;陶瓷层主要成分为Al、Si、O元素,相结构主要为γ-Al_2O_3与莫来石相,在PEO后期出现α-Al_2O_3相.复合陶瓷层硬度呈区域性分布,陶瓷层最高硬度可达HV1800.

Electro-optic integration of embedded electrodes and waveguides in LiNbO3 using a femtosecond laser

We describe the fabrication of a Mach-Zehnder optical modulator in LiNbO3 by femtosecond laser micormachining, which is composed of optical waveguides inscripted by a femtosecond laser and embedded microelectrodes subsequently using femtosecond laser ablation and selective electroless plating. A half-wave voltage close to 19 V is achieved at a wavelength of 632.8 nm with an interaction length of 2.6 mm. This simple and cost-effective technique opens up new opportunities for fabricating integrated electro-optic devices. (C) 2008 Optical Society of America

Time domain synthesis of electro-optical birefringent system for optical waveform generation

In this paper is described a novel technique for producing an electro-optical intensity synthesizer which can generate different periodic time domain waveforms through only sine or cosine wave applied-voltages. The synthesizer presented here consists of a series of stages between two polarizers, with each stage consisting of an electro-optic element and a compensator. Every electro-optical element has the same applied-voltage function but different azimuth angles and ratios between the longitudinal and transverse lengths. The main principle is the synthesis of an electro-optic effect and a polarization interference effect in the time domain. This technique is based on an expanded Fourier positive-direction searching algorithm, which can not only simplify the calculation process but also produces many choices of structural parameters for different waveforms generation. A three-stage synthesis of an electro-optical birefringent system for continuous square waveform is undertaken to prove the principle.

基于掺镧锆钛酸铅电光材料的光学相控阵光束扫描器

基于掺镧锆钛酸铅(PLZT)电光陶瓷材料的光学特性,提出了一种具有上下电极结构的光学相控阵高速光束扫描器。在理论上,分析了具有这种结构的光学相控阵的光束电光偏转特性和机制;在实验上,分析了掺镧锆钛酸铅材料的相位调制特性和损耗特性,制作了相关的光学相控阵器件,并构建了相应的测试系统,获得了光束在空间的角度偏转,与理论分析结果相符。

Direct detection of the relative strength of Rashba and Dresselhaus spin-orbit interaction: Utilizing the SU(2) symmetry

We propose a simple method to detect the relative strength of Rashba and Dresselhaus spin-orbit interactions in quantum wells (QWs) without relying on the directional-dependent physical quantities. This method utilizes the two different critical gate voltages that leading to the remarkable signals of SU(2) symmetry, which happens to reflect the intrinsic-structure-inversion asymmetry of the QW. We support our proposal by the numerical calculation of in-plane relaxation times based on the self-consistent eight-band Kane model. We find that the two different critical gate voltages leading to the maximum spin-relaxation times [one effect of the SU(2) symmetry] can simply determine the ratio of the coefficients of Rashba and Dresselhaus terms. Our proposal can also be generalized to extract the relative strengths of the spin-orbit interactions in quantum-wire and quantum-dot structures.

Electroluminescence from nano-crystalline Si/SiO2 structures embedded in pn junctions

Phosphorous-doped and boron-doped amorphous Si thin films as well as amorphous SiO2/Si/SiO2 sandwiched structures were prepared in a plasma enhanced chemical vapor deposition system. Then, the p-i-n structures containing nano-crystalline Si/SiO2 sandwiched structures as the intrinsic layer were prepared in situ followed by thermal annealing. Electroluminescence spectra were measured at room temperature under forward bias, and it is found that the electroluminescence intensity is strongly influenced by the types of substrate. The turn-on voltages can be reduced to 3 V for samples prepared on heavily doped p-type Si (p(+)-Si) substrates and the corresponding electroluminescence intensity is more than two orders of magnitude stronger than that on lightly doped p-type Si (p-Si) and ITO glass substrates. The improvements of light emission can be ascribed to enhanced hole injection and the consequent recombination of electron-hole pairs in the luminescent nanocrystalline Si/SiO2 system. (C) 2008 Elsevier Ltd. All rights reserved.

Charge and spin currents in a three-terminal mesoscopic ring

We theoretically investigate the charge and spin currents in a three-terminal mesoscopic ring in the presence of a uniform and nonuniform Rashba spin-orbit interaction (SOI). It is shown that a fully spin-polarized charge current and a pure spin current can be generated by tuning the probe voltages and/or the strength of the Rashba SOI. The charge and spin currents oscillate as the strength of the Rashba SOI increases induced by the spin quantum interference. The ratio of probe voltages oscillates synchronously with the pure spin current as the strength of the Rashba SOI increases in a nonuniform Rashba ring, while it remains constant in a uniform Rashba ring. We demonstrate theoretically that a three-terminal uniform Rashba ring can be used as a spin polarizer and/or spin flipper for different spin injections, and a nonuniform Rashba ring could allow us to detect the pure spin current electrically. (C) 2009 American Institute of Physics. [DOI 10.1063/1.3054322]

Quantum-confined Stark effect and built-in dipole moment in self-assembled InAs/GaAs quantum dots

Quantum-confined Stark effect and built-in dipole moment in self-assembled InAs/GaAs quantum dots (QDs), which are grown at relative low temperature (460degreesC) and embedded in GaAs p-i-n structure, have been studied by dc-biased electroreflectance. Franz-Keldysh oscillations from the undoped GaAs layer are used to determine the electric field under various bias voltages. Stark shift of -34 meV for the ground-state interband transition of the QDs is observed when the electric field increases from 105 to 308 kV/cm. The separation of the electron and hole states in the growth direction of 0.4 nm, corresponding to the built-in dipole moment of 6.4x10(-29) C m, is determined. It is found that the electron state lies above that of the hole, which is the same as that predicted by theoretical calculations for ideal pyramidal InAs QDs. (C) 2004 American Institute of Physics.

Extraction of intrinsic frequency response of p-i-n photodiodes

This letter presents a new method for extracting the intrinsic frequency response of a p-i-n photodiode (PD) from the measured frequency response of the PD at different bias voltages. This method is much simpler than the conventional calibration method, since only the measured scattering parameters are required, and there is no need to calibrate the test fixtures and the lightwave source. Experiment shows that the proposed method is as accurate as the calibration method.

Effect of the technology of implanting nitrogen into buried oxide on the radiation hardness of the top gate oxide for partially depleted SOIPMOSFET

The effect of implanting nitrogen into buried oxide on the top gate oxide hardness against total irradiation does has been investigated with three nitrogen implantation doses (8 x 10(15), 2 x 10(16) and 1 x 10(17) cm(-2)) for partially depleted SOI PMOSFET. The experimental results reveal the trend of negative shift of the threshold voltages of the studied transistors with the increase of nitrogen implantation dose before irradiation. After the irradiation with a total dose of 5 x 10(5) rad(Si) under a positive gate voltage of 2V, the threshold voltage shift of the transistors corresponding to the nitrogen implantation dose 8 x 10(15) cm(-2) is smaller than that of the transistors without implantation. However, when the implantation dose reaches 2 x 10(16) and 1 x 10(17) cm(-2), for the majority of the tested transistors, their top gate oxide was badly damaged due to irradiation. In addition, the radiation also causes damage to the body-drain junctions of the transistors with the gate oxide damaged. All the results can be interpreted by tracing back to the nitrogen implantation damage to the crystal lattices in the top silicon.