An ultra-low power CMOS random number generator

This paper proposes an ultra-low power CMOS random number generator (RING), which is based on an oscillator-sampling architecture. The noisy oscillator consists of a dual-drain MOS transistor, a noise generator and a voltage control oscillator. The dual-drain MOS transistor can bring extra-noise to the drain current or the output voltage so that the jitter of the oscillator is much larger than the normal oscillator. The frequency division ratio of the high-frequency sampling oscillator and the noisy oscillator is small. The RNG has been fabricated in a 0.35 mu m CMOS process. It can produce good quality bit streams without any post-processing. The bit rate of this RNG could be as high as 100 kbps. It has a typical ultra-low power dissipation of 0.91 mu W. This novel circuit is a promising unit for low power system and communication applications. (c) 2007 Elsevier Ltd. All rights reserved.

Several new phenomena in the formation of ring-banded spherulites of poly(epsilon-caprolactone) and poly(styrene-random-acrylonitrile) blends

Ring-banded spherulites in crystallization of poly(epsilon-caprolactone) and poly (styrene-random-acrylonitrile) blends were observed with polarizing optical microscopy and digital image analysis technique was applied directly to the image obtained by polarizing microscope, Several new interesting phenomena were found. One is that the ring-banded structure is still clearly seen after the analyzer was removed and this astonished phenomenon couldn't result from the general concept about formation mechanism of ring-banded spherulite - lamellae twisting, Another one is that there is a slight, dark line in the bright band when cross polars were added, which may be related to the formation process and mechanism of ring-banded spherulites in the blends of poly (epsilon-caprolactone) and poly (styrene-random-acrylonitrile).