2 resultados para Punch-through

em Chinese Academy of Sciences Institutional Repositories Grid Portal


Relevância:

60.00% 60.00%

Publicador:

Resumo:

Using conventional methods, a laser pulse can be focused down to around 6-8 mu m, but further reduction of the spot size has proven to be difficult. Here it is shown by particle-in-cell simulation that with a hollow cone an intense laser pulse can be reduced to a tiny, highly localized, spot of around 1 mu m radius, accompanied by much enhanced light intensity. The pulse shaping and focusing effect is due to a nonlinear laser-plasma interaction on the inner surface of the cone. When a thin foil is attached to the tip of the cone, the cone-focused light pulse compresses and accelerates the ions in its path and can punch through the thin target, creating highly localized energetic ion bunches of high density.

Relevância:

60.00% 60.00%

Publicador:

Resumo:

Planar punch through heterojunction phototransistors with a novel emitter control electrode and ion- implanted isolation (CE-PTHPT) are investigated. The phototransistors have a working voltage of 3-10V and high sensitivity at low input power. The base of the transistor is completely depleted under operating condition. Base current is zero. The CE-PTHPT has an increased speed and a decreased noise. The novel CE-PTHPT has been fabricated in this paper. The optical gain of GaAlAs/GaAs CE-PTHPT for the incident light power 1.3 and 43nw with the wavelength of 0.8 mu m reached 1260 and 8108. The input noise current calculated is 5.46 x 10(-16) A/H-z(1/2). For polysilicon emitter CE-PTHPT, the optical gain is 3083 at the input power of 0.174 mu w. The optical gain of InGaAs/InP CE-PTHPT reaches 350 for an incident power of 0.3 mu w at the wavelength of 1.55 mu m. The CE-PTHPT detectors is promising as photo detectors for optical fiber communication system.