33 resultados para Projective-planes

em Chinese Academy of Sciences Institutional Repositories Grid Portal


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介绍了一种基于多线阵像机构成的视觉空间定位系统.该系统利用线阵像机的快速性与高分辨率的特点,采用了非平行空间投影面相交定位的基本原理,利用几何投影关系定位求解的方法,实现了多线阵像机视觉系统的空间定位.并提出了多线阵像机的神经网络非线性修正方法,使修正后的PSD能在较宽的位置范围内输出高线性度的信号.实验结果表明,基于非线性修正的多线阵像机位姿测量系统简化了立体视觉空间定位计算的复杂性,在定位精度、定位范围和采样速度上均达到了良好效果.

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Mathematical formulas for estimating the hourly and daily radiation incident on planes of azimuth three step tracking and hour angle three step tracking have been derived in this paper. Based on the hourly solar radiation data of an average day in each month at Er-Lian-Hao-Te city, the hourly and monthly radiation received by planes of these two kinds of tracking have been calculated. The results show that in this district, one axis azimuth three step tracking and hour angle three step tracking could, respectively, obtain 66.5% and 63.3% higher radiation than that on the horizontal surface all year. Moreover, a two axis azimuth three step tracking plane could receive 72% more radiation than the horizontal surface. (C) 2002 Elsevier Science Ltd. All rights reserved.

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A determination of {1 1 1}A and {1 1 1}B in cubic GaN(c-GaN) was investigated by X-ray diffraction technique in detail. The c-GaN films are grown on GaAs(0 0 1) substrates by metalorganic chemical vapor deposition(MOCVD). The difference of integrated intensities measured by omega scan for the different order diffractions from {1 1 1}A and {1 1 1}B planes in the four-circle diffractometer gives convincing evidence as to which is the {1 1 1}A and which is the {1 1 1}B planes. The lesser deviation between the ratios of /F-h k l/(2)//F-(h) over bar (k) over bar (l) over bar/(2) and the calculated values after dispersion correction for atomic scattering factor shows that the content of parasitic hexagonal GaN(h-GaN) grown on c-GaN{1 1 1}A planes is higher than that on {1 1 1}B planes. The reciprocal space mappings provide additional proof that the h-GaN inclusions in c-GaN films appear as lamellar structure. (C) 2001 Published by Elsevier Science B.V.

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The mechanical deformations of nickel nanowire subjected to uniaxial tensile strain at 300 K are simulated by using molecular dynamics with the quantum corrected Sutten-Chen many-body force field. We have used common neighbor analysis method to investigate the structural evolution of Ni nanowire during the elongation process. For the strain rate of 0.1%/ps, the elastic limit is up to about 11% strain with the yield stress of 8.6 GPa. At the elastic stage, the deformation is carried mainly through the uniform elongation of the distances between the layers (perpendicular to the Z-axis) while the atomic structure remains basically unchanged. With further strain, the slips in the {111} planes start to take place in order to accommodate the applied strain to carry the deformation partially, and subsequently the neck forms. The atomic rearrangements in the neck region result in a zigzag change in the stress-strain curve; the atomic structures beyond the region, however, have no significant changes. With the strain close to the point of the breaking, we observe the formation of a one-atom thick necklace in Ni nanowire. The strain rates have no significant effect on the deformation mechanism, but have some influence on the yield stress, the elastic limit, and the fracture strain of the nanowire.

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采用分子动力学方法模拟了铜-铝扩散焊过程,分析了理想平面铜-铝试件(001)晶面间扩散焊的过渡层厚度,并利用径向分布、键对分析方法分析了在不同的降温速率下过渡层的结构变化.降温速率大时,过渡层保持原有无序结构,降温速率小时,过渡层从无序结构向面心立方结构转变.还对扩散焊后的铜-铝试件进行了拉伸模拟,并与尺寸大小相近的单晶铜和单晶铝的拉伸模拟结果进行比较.结果发现焊接后的强度比单晶铝和单晶铜的强度都要小,最大应变值也小.

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The deformation of alkali metals K, Rb, and Cs under epitaxial deformation is studied via the ab initio pseudopotential plane wave method using the local-density approximation. Under loading from the stable fee phase, metastable stares along directions [001], [111], and [201] are identified. One metastable state, presented at direction [201], has a very low symmetry in contrast to the planes [001] and [201]. Our results show that the softening direction and sequences of growth is significantly affected by the existence of the metastable states and magnitude of the energy barrier. The resulting softening sequences from soft to hard are [201], [110], [001], and [111] under biaxial compression and [001], [111], [201], and [110] under biaxial tension. An orthorhombic deformation path is used to investigate the fact, that the structure of the alkali films K and Cs evolve from the quasihexagonal structure into the (110)-oriented bcc structure, observed by experiments.

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We report the observation of a deformation twin formed by a recently proposed self-thickening, cross-slip twinning mechanism. This observation verifies one more twinning mechanism, in addition to those reported before, in nanocrystalline face-centered-cubic metals. In this mechanism, once the first Shockley partial is emitted from a grain boundary, and cross slips onto another slip plane, a deformation twin could nucleate and grow in both the primary and cross-slip planes without requiring the nucleation of additional Shockley partials from the grain boundary.

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The singular nature of the dynamic stress fields around an interface crack located between two dissimilar isotropic linearly viscoelastic bodies is studied. A harmonic load is imposed on the surfaces of the interface crack. The dynamic stress fields around the crack are obtained by solving a set of simultaneous singular integral equations in terms of the normal and tangent crack dislocation densities. The singularity of the dynamic stress fields near the crack tips is embodied in the fundamental solutions of the singular integral equations. The investigation of the fundamental solutions indicates that the singularity and oscillation indices of the stress fields are both dependent upon the material constants and the frequency of the harmonic load. This observation is different from the well-known -1/2 oscillating singularity for elastic bi-materials. The explanation for the differences between viscoelastic and elastic bi-materials can be given by the additional viscosity mismatch in the case of viscoelastic bi-materials. As an example, the standard linear solid model of a viscoelastic material is used. The effects of the frequency and the material constants (short-term modulus, long-term modulus and relaxation time) on the singularity and the oscillation indices are studied numerically.

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In virtue of reference Cartesian coordinates, geometrical relations of spatial curved structure are presented in orthogonal curvilinear coordinates. Dynamic equations for helical girder are derived by Hamilton principle. These equations indicate that four generalized displacements are coupled with each other. When spatial structure degenerates into planar curvilinear structure, two generalized displacements in two perpendicular planes are coupled with each other. Dynamic equations for arbitrary curvilinear structure may be obtained by the method used in this paper.

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A transmission electron microscopy (TEM) study has been carried out to uncover how dislocations and twins accommodate large plastic strains and accumulate in very small nanocrystalline Ni grains during low-temperature deformation. We illustrate dislocation patterns that suggest preferential deformation and nonuniform defect storage inside the nanocrystalline grain. Dislocations are present in individual and dipole configurations. Most dislocations are of the 60 degrees type and pile up on (111) slip planes. Various deformation responses, in the forms of dislocations and twinning, may simultaneously occur inside a nanocrystalline grain. Evidence for twin boundary migration has been obtained. The rearrangement and organization of dislocations, sometimes interacting with the twins, lead to the formation of subgrain boundaries, subdividing the nanograin into mosaic domain structures. The observation of strain (deformation)-induced refinement contrasts with the recently reported stress-assisted grain growth in nanocrystalline metals and has implications for understanding the stability and deformation behavior of these highly nonequilibrium materials.

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For most practically important plane elasticity problems of orthotropic materials, stresses depend on elastic constants through two nondimensional combinations. A spatial rescaling has been found to reduce the orthotropic problems to equivalent problems in materials with cubic symmetry. The latter, under favorable conditions, may be approximated by isotropic materials. Consequently, solutions for orthotropic materials can be constructed approximately from isotropic material solutions or rigorously from cubic ones. The concept is developed to gain insight into the interplay between anisotropy and finite geometry. The inherent simplicity of the solutions allows a variety of technical problems to be addressed efficiently. Included are stress concentration related cracking, effective contraction of orthotropic material specimens, crack deflection onto easy fracture planes, and surface flaw induced delamination.

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Near threshold, mixed mode (I and II), fatigue crack growth occurs mainly by two mechanisms, coplanar (or shear) mode and branch (or tensile) mode. For a constant ratio of ΔKIKII the shear mode growth shows a self-arrest character and it would only start again when ΔKI and ΔKII are increased. Both shear crack growth and the early stages of tensile crack growth, are of a crystallographic nature; the fatigue crack proceeds along slip planes or grain boundaries. The appearance of the fracture surfaces suggest that the mechanism of crack extension is by developing slip band microcracks which join up to form a macrocrack. This process is thought to be assisted by the nature of the plastic deformation within the reversed plastic zone where high back stresses are set up by dislocation pile-ups against grain boundaries. The interaction of the crack tip stress field with that of the dislocation pile-ups leads to the formation of slip band microcracks and subsequent crack extension. The change from shear mode to tensile mode growth probably occurs when the maximum tensile stress and the microcrack density in the maximum tensile plane direction attain critical values.

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利用带电单分散聚苯乙烯胶体粒子,通过自组装机理,制备了体积百分比为4·8%的具有多晶结构的胶体晶体,并用Kossel衍射技术和紫外可见分光光度计分别对晶体的生长过程进行了监测.通过对Kossel的图像分析检测不同阶段相应的晶格结构,发现胶体结晶过程晶体结构演变顺序为由液态—随机层结构—堆无序结构—面心立方孪晶结构到面心立方结构.定量地确定了结晶过程中晶体不同晶面的晶面间距和晶体的晶格常数,通过紫外可见分光光度计测量的晶体透射谱图,计算得到111晶面的晶面间距和晶体的晶格常数,与用Kossel衍射技术得到的结果相一致,还发现随样品放置时间的延长,衰减峰变窄和加深,并向短波方向移动,对应着晶体的晶格常数减小的现象.