Compatibilization effects of block copolymers in high density polyethylene/syndiotactic polystyrene blends

Three triblock copolymers of poly[styrene-b-(ethylene-co-butylene)-b-styrene] (SEBS) of different molecular weights and one diblock copolymer of poly[styrene-b-(ethylene-co-butylene)] (SEB) were used to compatibilize high density polyethylene/syndiotactic polystyrene (HDPE/sPS, 80/20) blend. Morphology observation showed that phase size of the dispersed sPS particles was significantly reduced on addition of all the four copolymers and the interfacial adhesion between the two phases was dramatically enhanced. Tensile strength of the blends increased at lower copolymer content but decreased with increasing copolymer content. The elongation at break of the blends improved and sharply increased with increments of the copolymers. Drop in modulus of the blend was observed on addition of the rubbery copolymers. The mechanical performance of the modified blends is strikingly dependent not only on the interfacial activity of the copolymers but also on the mechanical properties of the copolymers, particularly at the high copolymer concentration. Addition of compatibilizers to HDPE/sPS blend resulted in a significant reduction in crystallinity of both HDPE and sPS. Measurements of Vicat softening temperature of the HDPE/sPS blends show that heat resistance of HDPE is greatly improved upon incorporation of 20 wt% sPS.

Microscopic Model Of Nano-Scale Particles Removal In High Pressure Co2-Based Solvents

A physical model is presented to describe the kinds of static forces responsible for adhesion of nano-scale copper metal particles to silicon surface with a fluid layer. To demonstrate the extent of particle cleaning, Received in revised form equilibrium separation distance (ESD) and net adhesion force (NAF) of a regulated metal particle with different radii (10-300 nm) on the silicon surface in CO2-based cleaning systems under different pressures were simulated. Generally, increasing the pressure of the cleaning system decreased the net adhesion force between spherical copper particle and silicon surface entrapped with medium. For CO2 + isopropanol cleaning system, the equilibrium separation distance exhibited a maximum at temperature 313.15 K in the Equilibrium separation distance regions of pressure space (1.84-8.02 MPa). When the dimension of copper particle was given, for example, High pressure 50 nm radius particles, the net adhesion force decreased and equilibrium separation distance increased with increased pressure in the CO2 + H2O cleaning system at temperature 348.15 K under 2.50-12.67 MPa pressure range. However, the net adhesion force and equilibrium separation distance both decreased with an increase in surfactant concentration at given pressure (27.6 or 27.5 MPa) and temperature (318 or 298 K) for CO2 + H2O with surfactant PFPE COO-NH4+ or DiF(8)-PO4-Na+. (C) 2008 Elsevier B.V. All rights reserved.

Active phase control and frequency chirp effects on supercontinuum generation in high birefringence photonic crystal fiber

An acoustic-optics programmable dispersive filter (AOPDF) was first employed to actively control the linearly polarized femtosecond pump pulse frequency chirp for supercontinuum (SC) generation in a high birefringence photonic crystal fiber (PCF). By accurately controlling the second order phase distortion and polarization direction of incident pulses, the output SC spectrum can be tuned to various spectral energy distributions and bandwidths. The pump pulse energy and bandwidth are preserved in our experiment. It is found that SC with broader bandwidth can be generated with positive chirped pump pulses except when the chirp value is larger than the optimal value, and the same optimal value exists for the pump pulses polarized along the two principal axes. With optimal positive chirp, more than 78% of the pump energy can be transferred to below 750 nm. Otherwise, negative chirp will weaken the blue-shift broadening and the SC bandwidth. (C) 2007 Elsevier B.V. All rights reserved.

Electron irradiation induced defects in high temperature annealed InP single crystal

Electron irradiation induced defects in InP material which has been formed by high temperature annealing undoped InP in different atmosphere have been studied in this paper. In addition to Fe acceptor, there is no obvious defect peak in the sample before irradiation, whereas five defect peaks with activation energies of 0.23 eV, 0.26 eV, 0.31 eV, 0.37 eV and 0.46 eV have been detected after irradiation. InP annealed in P ambient has more thermally induced defects, and the defects induced by electron irradiation have characteristics of complex defect. After irradiation, carrier concentration and mobility of the samples have suffered obvious changes. Under the same condition, electron irradiation induced defects have fast recovery behavior in the FeP2 ambient annealed InP. The nature of defects, as well as their recovery mechanism and influence on material property have been discussed from the results.

Investigation of optical quenching of photoconductivity in high-resistivity GaN epilayer

In undoped high-resistivity GaN epilayers grown by metalorganic chemical vapor deposition (MOCVD) on sapphire, deep levels are investigated by persistent photoconductivity (PPC) and optical quenching (OQ) of photoconductivity (PC) measurements. The PPC and OQ are studied by exciting the samples with two beams of radiation of various wavelengths and intensities. When the light wavelengths of 300 and 340 nm radiate the GaN epilayer, the photocurrent without any quenching effect is rapidly increased because the band gap transition only occurs. If the background light is 340 nm and the quenching light is 564 or 828 nm, the quenching of a small photocurrent generates but clearly. Two broad quenching bands that extend from 385 to 716 nm and from 723 to 1000 nm with a maximum at approximately 2.2 eV (566 nm) is observed. These quenching bands are attributed to hole trap level's existence in the GaN epilayer. We point out that the origin of the defects responsible for the optical quenching can be attributed to nitrogen antisite and/or gallium vacancy. (c) 2006 Elsevier B.V. All rights reserved.

Edge dislocation of b=[001]/2 in the InAs nanostructure on InP(001)

The self-organized InAs/In0.52Al0.48As nanostructure were grown on InP (001) using molecular beam epitaxy (MBE). The nanostructure has been studied using transmission electron microscopy (TEM) and high resolution transmission electron microscopy (HRTEM). The edge dislocations with the Burgers vector b = ([001]/2) and extending along the [$(110) over bar $] direction are observed. The results show that in the region near an edge dislocation, no InAs wires were formed, while in the regions free of dislocation, wire-like nanostructures were formed. The mechanisms for the formation of the [001]/2 edge dislocations were discussed.

Abnormal photoabsorption in high resistance GaN epilayer

Unintentionally doped GaN epilayers are grown by the metalorganic chemical vapor deposition (MOCVD). Photovoltaic (PV) spectroscopy shows that there appears an abnormal photoabsorption in some undoped GaN films with high resistance. The peak energy of the absorption spectrum is smaller than the intrinsic energy band gap of GaN. This phenomenon may be related to exciton absorption. Then metal-semiconductor-metal (MSM) Schottky photodetectors are fabricated on these high resistance epilayers. The photo spectrum responses are different when the light individually irradiates each of the two electrodes with the photodetector which are differently biased. When the excitation light irradiates around the reverse biased Schottky junction, the responsivity is almost one order of magnitude larger than that around the forward biased junction. Furthermore, when the excitation light irradiates the reverse biased Schottky junction, the peak energy of the spectrum has a prominent red-shift compared with the peak energy of the spectrum measured with the excitation light irradiating the forward biased Schottky junction. The shift value is about 28 meV, and it is found to be insensitive to temperature. According to the analyses of the distribution of the electric field within the MSM device and the different dependences of the response on the electric field intensity between the free carriers and excitons, a reliable explanation for the different response among various areas is proposed.

OXYGEN ANALYSES IN HIGH-TC SUPERCONDUCTING FILMS BY MEV PROTON ELASTIC BACKSCATTERING

A technique for analysis of total oxygen contents in high-T(c) superconducting films is demonstrated. It uses elastic backscattering (EBS) of 1.5-2.5 MeV protons. By comparing the H EBS spectra from substrate materials, the absolute oxygen content in the films can be easily calculated. It is estimated that the analysis can be accurate to better than 5% for YBCO films with thicknesses from several hundred angstroms to several microns. Comparisons with RBS are given and advantages of this technique are shown.

SHIFTING PHOTOLUMINESCENCE BANDS IN HIGH-RESISTIVITY LI-COMPENSATED GAAS

It is shown that Li diffusion of GaAs can give rise to semi-insulating samples with electrical resistivity as high as 10(7) OMEGAcm in undoped, n-type, and p-type starting materials. The optical properties of the compensated samples are correlated with the depletion of free carriers caused by the Li diffusion. The radiative recombination of the Li-compensated samples is dominated by emissions with excitation-dependent peak positions that shift to lower energies with increasing compensation. The photoluminescence properties are characteristic of fluctuations of the electrostatic potential in strongly doped, compensated crystals.

Magnetospectroscopy of bound phonons in high purity GaAs

Far infrared magnetophotoconductivity performed on high purity GaAs reveals the existence of fine structures in the resonant magnetopolaron regions. The fine structures are attributed to the presence of bound phonons due to multiphonon processes. We demonstrate that the magnetopolaron energy spectrum consists of bound phonon branches and magnetopolaron branches. Our results also indicate that different phonons are bound to a single impurity, and that the bound phonon in Si-doped GaAs is a quasilocalized mode.

Aggregation and precipitation in high dose as ion implanted Ge0.5Si0.5 alloy

Thermally stimulated redistribution and precipitation of excess arsenic in Ge0.5Si0.5 alloy has been studied by X-ray photoelectron spectroscopy (XPS), cross sectional transmission electron microscopy (XTEM) and X-ray energy disperse spectrometry (EDS). Samples were prepared by the implantation of 6 X 10(6) As+ cm(-2) and 100 keV with subsequent thermal processing at 800 degrees C and 1000 degrees C for 1 h. The XPS depth profiles from the implanted samples before and after the thermal annealing indicate that there is marked redistribution of the elements in heavily arsenic-implanted Ge0.5Si0.5 alloys during the annealing, including: (1) diffusion of As from the implanted region to the surface; (2) aggregation of Ge in the vicinity of the surface. A high density of precipitates was observed near the surface which were by XTEM and EDS identified as an arsenide. It is suggested that most of the implanted As in Ge0.5Si0.5 alloy exists in the form of GeAs.

Three-Particle Coincidence of the Long Range Pseudorapidity Correlation in High Energy Nucleus-Nucleus Collisions

We report the first three-particle coincidence measurement in pseudorapidity (Delta eta) between a high transverse momentum (p(perpendicular to)) trigger particle and two lower p(perpendicular to) associated particles within azimuth |Delta phi| < 0.7 in root s(NN) = 200 GeV d + Au and Au + Au collisions. Charge ordering properties are exploited to separate the jetlike component and the ridge (long range Delta eta correlation). The results indicate that the correlation of ridge particles are uniform not only with respect to the trigger particle but also between themselves event by event in our measured Delta eta. In addition, the production of the ridge appears to be uncorrelated to the presence of the narrow jetlike component.

Control of chemical reaction in high-intensity laser field

The prospects of control chemical reaction in high-intensity laser field are talked about here, and some experimental and theoretical designs are reviewed and discussed also.

Determination of ultra-trace concentrations of elements in high purity tellurium by inductively coupled plasma mass spectrometry after Fe(OH)(3) coprecipitation

In this work, a method was established for the determination of impurities in high purity tellurium by inductively coupled plasma mass spectrometry (ICP-MS) after Fe(OH)(3) coprecipitation. After comparison of coprecipitation ability and separation efficiency between Fe(OH), and Al(OH)(3), Fe(OH)(3) was chosen as the precipitate. A separation factor of 160 for 200 mg tellurium was obtained under conditions of pH 9 and 2 mg of Fe3(+). The 13 elements, such as Bi, Sn, Pb, In, Tl, Cd, Cu, Co, Ni, Zn, Ti, Be and Zr, could be almost completely coprecipitated under these conditions. In addition, Te memory effect imposed on the ICP-MS instrument was assessed, as well as Te matrix effect that caused the low recovery of Ga, As, Sb and V in real sample was discussed. Finally, the method was evaluated through recovery test and was applied to practical sample analysis, with detection limits of most of the elements being below 0.15 mug g(-1) and R.S.D. below or at approximately 10%, which indicated that this method could fully satisfy the requirements for analysis of 99.999% similar to 99.9999% high purity Te.

Brittle-ductile transition in high-density polyethylene/glass-bead blends: Effects of interparticle distance and temperature

The toughness of high-density polyethylene (HDPE)/glass-bead blends containing various glass-bead contents as a function of temperature was studied. The toughness of the blends was determined from the notch Izod impact test. A sharp brittle-ductile transition was observed in impact strength-interparticle distance (ID) curves at various temperatures. The brittle-ductile transition of HDPE/glass-bead blends occurred either with reduced ID or with increased temperature. The results indicated that the brittle-ductile-transition temperature dropped markedly with increasing glass-bead content. Moreover, the correlation between the critical interparticle distance (ID.) and temperature was obtained. Similar to the ID, of polymer blends with elastomers, the ID, nonlinearly increased with increasing temperature. However, this was the first observation of the variation of the ID, with temperature for polymer blends with rigid particles. (C) 2001 John Wiley & Sons, Inc. J Polym. Sci Part B: Polym. Phys 39: 1855-1859, 2001.