Detection of Brillouin scattering temperature signal in Brillouin optical time-domain reflectometer sensing system based on instantaneous frequency measurement technology

We present a simple and practical method for the single-ended distributed fiber temperature measurements using microwave (11-GHz) coherent detection and the instantaneous frequency measurement (IFM) technique to detect spontaneous Brillouin backscattered signal in which a specially designed rf bandpass filter at 11 GHz is used as a frequency discriminator to transform frequency shift to intensity fluctuation. A Brillouin temperature signal can be obtained at 11 GHz over a sensing length of 10 km. The power sensitivity dependence on temperature induced by frequency shift is measured as 2.66%/K. (c) 2007 Society of Photo-Optical Instrumentation Engineers.

Detection of Brillouin scattering temperature signal in Brillouin optical time-domain reflectometer sensing system based on instantaneous frequency measurement technology

abstract {We present a simple and practical method for the single-ended distributed fiber temperature measurements using microwave (11-GHz) coherent detection and the instantaneous frequency measurement (IFM) technique to detect spontaneous Brillouin backscattered signal in which a specially designed rf bandpass filter at 11 GHz is used as a frequency discriminator to transform frequency shift to intensity fluctuation. A Brillouin temperature signal can be obtained at 11 GHz over a sensing length of 10 km. The power sensitivity dependence on temperature induced by frequency shift is measured as 2.66%/K. © 2007 Society of Photo-Optical Instrumentation Engineers.}

Sensitivity map of laser tweezers Raman spectroscopy for single-cell analysis of colorectal cancer

Raman spectroscopy on single, living epithelial cells captured in a laser trap is shown to have diagnostic power over colorectal cancer. This new single-cell technology comprises three major components: primary culture processing of human tissue samples to produce single-cell suspensions, Raman detection on singly trapped cells, and diagnoses of the cells by artificial neural network classifications. it is compared with DNA flow cytometry for similarities and differences. Its advantages over tissue Raman spectroscopy are also discussed. In the actual construction of a diagnostic model for colorectal cancer, real patient data were taken to generate a training set of 320 Raman spectra and, a test set of 80. By incorporating outlier corrections to a conventional binary neural classifier, our network accomplished significantly better predictions than logistic regressions, with sensitivity improved from 77.5% to 86.3% and specificity improved from 81.3% to 86.3% for the training set and moderate improvements for the test set. Most important, the network approach enables a sensitivity map analysis to quantitate the relevance of each Raman band to the normal-to-cancer transform at the cell level. Our technique has direct clinic applications for diagnosing cancers and basic science potential in the study of cell dynamics of carcinogenesis. (C) 2007 Society of Photo-Optical Instrumentation Engineers.

Sensitivity map of laser tweezers Raman spectroscopy for single-cell analysis of colorectal cancer

Raman spectroscopy on single, living epithelial cells captured in a laser trap is shown to have diagnostic power over colorectal cancer. This new single-cell technology comprises three major components: primary culture processing of human tissue samples to produce single-cell suspensions, Raman detection on singly trapped cells, and diagnoses of the cells by artificial neural network classifications. it is compared with DNA flow cytometry for similarities and differences. Its advantages over tissue Raman spectroscopy are also discussed. In the actual construction of a diagnostic model for colorectal cancer, real patient data were taken to generate a training set of 320 Raman spectra and, a test set of 80. By incorporating outlier corrections to a conventional binary neural classifier, our network accomplished significantly better predictions than logistic regressions, with sensitivity improved from 77.5% to 86.3% and specificity improved from 81.3% to 86.3% for the training set and moderate improvements for the test set. Most important, the network approach enables a sensitivity map analysis to quantitate the relevance of each Raman band to the normal-to-cancer transform at the cell level. Our technique has direct clinic applications for diagnosing cancers and basic science potential in the study of cell dynamics of carcinogenesis. (C) 2007 Society of Photo-Optical Instrumentation Engineers.

Wide-band polarization-insensitive high-output-power semiconductor optical amplifier based on thin tensile-strained bulk InGaAs

A polarization-insensitive semiconductor optical amplifier (SOA) with a very thin active tensile-strained InGaAs bulk has been fabricated. The polarization sensitivity of the amplifier gain is less than 1 dB over both the entire range of driving current and the 3 dB optical bandwidth of more than 80 nm. For optical signals of 1550 nm wavelength, the SOA exhibits a high saturation output power +7.6 dBm together with a low noise figure of 7.5 dB, fibre-to-fibre gain of 11.5 dB, and low polarization sensitivity of 0.5 dB. Additionally, at the gain peak 1520 nm, the fibre-to-fibre gain is measured to be 14.1 dB.

A novel low-power input-independent MOS AC/DC charge pump

This paper presents a novel fully integrated MOS AC to DC charge pump with low power dissipation and stable output for RFID applications. To improve the input sensitivity, we replaced Schottky-diodes in conventional charge pumps with MOS diodes with zero threshold, which has less process defects and is thus more compatible with other circuits. The charge pump in a RFID transponder is implemented in a 0.35um CMOS technology with 0.24 sq mm die size. The analytical model of the charge pump and the simulation results are presented.

A novel high sensitivity CE-PTHPT for optical fiber communication

Planar punch through heterojunction phototransistors with a novel emitter control electrode and ion- implanted isolation (CE-PTHPT) are investigated. The phototransistors have a working voltage of 3-10V and high sensitivity at low input power. The base of the transistor is completely depleted under operating condition. Base current is zero. The CE-PTHPT has an increased speed and a decreased noise. The novel CE-PTHPT has been fabricated in this paper. The optical gain of GaAlAs/GaAs CE-PTHPT for the incident light power 1.3 and 43nw with the wavelength of 0.8 mu m reached 1260 and 8108. The input noise current calculated is 5.46 x 10(-16) A/H-z(1/2). For polysilicon emitter CE-PTHPT, the optical gain is 3083 at the input power of 0.174 mu w. The optical gain of InGaAs/InP CE-PTHPT reaches 350 for an incident power of 0.3 mu w at the wavelength of 1.55 mu m. The CE-PTHPT detectors is promising as photo detectors for optical fiber communication system.