用于多普勒测风雷达的单频全固态激光器稳频

采用Pound-Drever-Hall技术，对用于多普勒测风雷达的种子注入激光器的主动激光器进行稳频，将其频率锁定在一个特殊设计的法珀腔上。该法珀腔总体采用零膨胀微晶玻璃材料制成，具有极高的温度稳定性。使用计算机采集鉴频信号并且进行处理。锁定后，1秒内激光器的相对频率漂移为±25kHz，一小时内的相对频率漂移为±55kHz，满足多普勒测风雷达的要求。

注入锁定激光器的边带锁频技术稳频系统优化分析

介绍了边带锁频技术稳频方法，推导出鉴频曲线，对稳频控制过程进行了分析．建立了注入锁定激光器的边带锁频技术稳频系统理论模型，讨论了相关参量对稳频效果的影响并且进行了优化．结果表明，增加入射光强，采用窄线宽的法布里一珀罗以及对法布里一珀罗进行高准确度温控都可以增强稳频效果．提出适用于注入锁定激光器的两种稳频方案并进行比较．

Investigation of native defects and property of bulk ZnO single crystal grown by a closed chemical vapor transport method

Hall effect, Raman scattering, photoluminescence spectroscopy (PL), optical absorption (OA), mass spectroscopy, and X-ray diffraction have been used to study bulk ZnO single crystal grown by a closed chemical vapor transport method. The results indicate that shallow donor impurities (Ga and Al) are the dominant native defects responsible for n-type conduction of the ZnO single crystal. PL and OA results suggest that the as-grown and annealed ZnO samples with poor lattice perfection exhibit strong deep level green photoluminescence and weak ultraviolet luminescence. The deep level defect in as-grown ZnO is identified to be oxygen vacancy. After high-temperature annealing, the deep level photoluminescence is suppressed in ZnO crystal with good lattice perfection. In contrast, the photoluminescence is nearly unchanged or even enhanced in ZnO crystal with grain boundary or mosaic structure. This result indicates that a trapping effect of the defect exists at the grain boundary in ZnO single crystal. (C) 2007 Elsevier B.V. All rights reserved.

Characterization of bulk ZnO single crystal grown by a CVT method - art. no. 68410F

Hall effect, photoluminescence spectroscopy (PL), mass spectroscopy and X-ray diffraction have been used to study bulk ZnO single crystal grown by a closed seeded chemical vapor transport method. Enhancement of n-type electrical conduction and increase of nitrogen concentration are observed of the ZnO samples after high temperature annealing. The results suggest that vacancy is dominant native defect in the ZnO material. These phenomena are explained by a generation of shallow donor defect and suppression of deep level defects in ZnO after the annealing.

Native deep level defects in ZnO single crystal grown by CVT method - art. no. 68410I

Hall effect, photoluminescence (PL), infrared absorption, deep level transient spectroscopy (DLTS), and Raman scattering have been used to study property and defects of ZnO single crystal grown by a chemical vapor transport method (CVT). As-grown ZnO is N type with free electron density Of 10(16)-10(17)cm(-3). It has a slight increase after 900 degrees C annealing in oxygen ambient. The DLTS measurement revealed four deep level defects with energy at 0.30eV, 0.50eV, 0.68eV and 0.90eV in the as-grown ZnO sample, respectively. After the high temperature annealing, only the 0.5eV defect survive and has a concentration increase. PL results of the as-grown and annealed ZnO indicate that the well-known green emission disappear after the annealing. The result suggests a correlation between the 0.68eV defect and the green PL peak. Results of P-doped ZnO were also compared with the undoped ZnO sample. The nature of the defects and their influence on the material property have been discussed.

A NEW METHOD FOR MEASURING THE EFFECTIVE DIFFUSION CONSTANT OF 2-DIMENSIONAL ELECTRONS IN THE PRESENCE OF MAGNETIC-FIELDS

The transient charge response Q(t) of a two-dimensional electron gas (2DEG) in GaAs/AlxGa1-xAs heterostructures to a small pulse of the gate voltage, applied between the top gate and source electrodes in a Corbino structure, was employed to directly measure the effective diffusion constant of a 2DEG in the quantum Hall regime. The measured diffusion constant D showed a drastic change as the magnetic field was swept through the integer fillings of the Landau levels.

ON HALL AND KIERS TOPOLOGICAL STATE AND TOTAL TOPOLOGICAL INDEX

The topological state and the total topological index, tau, have been tested systematically. Counterexamples are provided proving that the topological state method cannot determine classes of symmetrically equivalent atoms in a molecule fully correct. The

Quantitatively distinguishing sediments from the Yangtze River and the Yellow River using delta Eu-N-I REEs pound plot

Sediment samples were collected from the lower channel of the Yangtze River and the Yellow River and the contents of rare earth elements (REEs) were measured. In addition, some historical REEs data were collected from published literatures. Based on the delta Eu-N-I REEs pound plot, a clear boundary was found between the sediments from the two rivers. The boundary can be described as an orthogonal polynomial equation by ordinary linear regression with sediments from the Yangtze River located above the curve and sediments from the Yellow River located below the curve. To validate this method, the REEs contents of sediments collected from the estuaries of the Yangtze River and the Yellow River were measured. In addition, the REEs data of sediment Core 255 from the Yangtze River and Core YA01 from the Yellow River were collected. Results show that the samples from the Yangtze River estuary and Core 255 almost are above the curve and most samples from the Yellow River estuary and Core YA01 are below the curve in the delta Eu-N-I REEs pound plot. The plot and the regression equation can be used to distinguish sediments from the Yangtze River and the Yellow River intuitively and quantitatively, and to trace the sediment provenance of the eastern seas of China. The difference between the sediments from two rivers in the delta Eu-N-I REEs pound plot is caused by different mineral compositions and regional climate patterns of the source areas. The relationship between delta Eu-N and I REEs pound is changed little during the transport from the source area to the river, and from river to the sea. Thus the original information on mineral compositions and climate of the source area was preserved.