Polarization effects simulation of AlGaN/GaN heterojunction by using a symbolistic delta-doping layer

Polarization effects in AlGaN/GaN heterojunction are simulated based on a traditional semiconductor device simulator. A delta doping layer is purposely inserted at the interface of the heterojunction in the simulation, so the ionized donors or acceptors can represent polarization-induced positive or negative fixed charges. The free electron distribution of single AlGaN/GaN heterostructures with Ga-face and N-face growth is compared, and the results of the simulation show that carrier confinement takes place only in the former structure. The dependence of sheet density of free electrons at the interface of Ga-face growth AlGaN/GaN on Al composition and the thickness of AlGaN is also investigated. The consistency of simulation results with the experiments and calculations reported by other researchers shows that this method can be effectively used to deal with the polarization effects in the simulation of GaN-based heterojunction devices. (C) 2004 Elsevier Ltd. All rights reserved.

Simulation of polarization effects in AlGaN/GaN heterojunction

A method for introducing polarization effects in the simulation of GaN-based heterojunction devices is proposed. A delta doping layer is inserted at the interface of heterojunction and the ionized donors or acceptors act as polarization induced fixed charges. Thus polarization effects can be taken into account in a traditional device simulator. Ga-face and N-face single AlGaN/GaN heterostructures are simulated, and the simulation results show that carrier confinement takes place only in the former structure while not in the latter one. The sheet density of free electrons at the interface of Ga-face AlGaN/GaN increases with the Al composition and the thickness of AlGaN. The consistence of simulation results with the experiments and calculations reported elsewhere shows that this method can effectively introduce polarization effects in the simulation of GaN-based heterojunction devices.

Effects of coherence on anisotropic electromagnetic Gaussian-Schell model beams on propagation

An analytical formula for the cross-spectral density matrix of the electric field of anisotropic electromagnetic Gaussian-Schell model beams propagating in free space is derived by using a tensor method. The effects of coherence on those beams are studied. It is shown that two anisotropic stochastic electromagnetic beams that propagate from the source plane z = 0 into the half-space z > 0 may have different beam shapes (i.e., spectral density) and states of polarization in the half-space, even though they have the same beam shape and states of polarization in the source plane. This fact is due to a difference in the coherence properties of the field in the source plane. (C) 2007 Optical Society of America.

不同玻璃组分对掺铒碲酸盐玻璃 光谱性质的影响

Series of tellurite glasses were prepared by traditional melting method, the glass composition were changed and the different effects of glass modifier oxides(alkali metals and alkaline earth metal oxides) and glass intermediate (Y2O3, GeO2, Nb2O5, WO3) on the optical and spectroscopic properties of Er³⁺ doped tellurite glass were researched and compared. The infrared transmitting spectra, absorption spectra and fluorescence spectra were tested, the results showed that Nb2O5 and WO3 in the glass act as part of the body's role in the formation of the network, caused the reduction of transmitting range in infrared wavelength, which decrease the transmitting properties of tellurite glass. The introduction of high valence cationic ions, WO3 especially, can increase the FWHM of Er³⁺ for the increased polarization effect. With the decreasing of cationic field of glass modifier ions, the ion filed of the environment around Er³⁺ increased, subsequently, the role of ligand field polarization effect reduced, which makes the luminescence lifetime increase, and on the contrary the FWHM decrease monotonously.

Superfluid nuclear matter in BCS theory and beyond

Medium polarization effects are studied for S-1(0) pairing in nuclear matter within BHF approach. The screening potential is calculated in the RPA limit, suitably renormalized to cure the low density mechanical instability of nuclear matter. The self-energy corrections are consistently included resulting in a strong depletion of the Fermi surface. The self-energy effects always lead to a quenching of the gap, whereas it is almost completely compensated by the anti-screening effect in nuclear matter.

Effects of Bothriocephalus acheilognathi on the polarization response of pronephric leucocytes of carp, Cyprinus carpio

An in vitro assay was used to examine the effect of Bothriocephalus acheilognathi Yamaguti, 1934 (Cestoda: Pseudophyllidea) on the polarization response of pronephric leucocytes of carp, Cyprinus carpio. Leucocytes, isolated from naive, naturally-infected fish and carp injected intraperitoneally with cestode extracts, were exposed to parasite extracts (protein concentrations 0-10.0 mu g ml(-1)), for up to 24 h in the presence or absence of carp serum. In general, polarization responses of the pronephric leucocytes, primarily neutrophils and eosinophils, increased with incubation time although there was no significant difference in the response induced by the different protein concentrations. Differences in the polarization response were, however, observed in naive, naturally infected and injected fish and the cells responded differently in the presence and absence of carp serum. In the absence of carp serum the polarization response of pronephric leucocytes in vitro was significantly reduced with cells obtained from injected and naturally infected fish compared with those obtained from naive carp. This suppression of leucocyte migration was however reduced by the addition of carp serum to the in vitro system. The role of this interaction between the possible suppression of polarization induced by the parasite and stimulation by serum is discussed.

Strain Effects on the Optical Polarization Properties of R-Plane Wurtzite GaN

Using the effective-mass Hamiltonian for an arbitrary direction wurtzite semiconductor on the basis of k.p theory, we investigate the strain effects on the transition energies and optical properties in the R-plane ([1012]-oriented plane) GaN. The results show that (1) the transition energies decrease with the biaxial strains changing from -0.5 to 0.5%; and (2) giant optical anisotropy appears in the R-plane which is significantly affected by the biaxial strains. We clarify the relation between the strains and the polarization properties. Finally, we discuss the application of these properties to the R-plane GaN based devices. (c) 2009 The Japan Society of Applied Physics

Effects of polarization field on formation of two-dimensional electron gas in (0001) and (11(2)over-bar0) plane AlGaN/GaN heterostructures

Photoluminescence (PL) and temperature-dependent Hall effect measurements were carried out in (0001) and (11 (2) over bar0) AlGaN/GaN heterostructures grown on sapphire substrates by metalorganic chemical vapor deposition. There are strong spontaneous and piezoelectric electric fields (SPF) along the growth orientation of the (0001) AlGaN/GaN heterostructures. At the same time there are no corresponding SPF along that of the (1120) AlGaN/GaN. A strong PL peak related to the recombination between two-dimensional electron gas (2DEG) and photoexcited holes was observed at 3.258 eV at room temperature in (0001) AlGaN/GaN heterointerfaces while no corresponding PL peak was observed in (11 (2) over bar0). The existence of a 2DEG was observed in (0001) AlGaN/GaN multi-layers with a mobility saturated at 6000 cm(2)/V s below 80 K, whereas a much lower mobility was measured in (11 (2) over bar0). These results indicated that the SPF was the main element to cause the high mobility and high sheet-electron-density 2DEG in AlGaN/GaN heterostructures. (C) 2004 Elsevier B.V. All rights reserved.

Effects of piezoelectricity and spontaneous polarization on electronic and optical properties of wurtzite III-V nitride quantum wells

A theoretical model accounting for the macropolarization effects in wurtzite III-V nitrides quantum wells (QWs) is presented. Energy dispersions and exciton binding energies are calculated within the framework of effective-mass theory and variational approach, respectively. Exciton-associated transitions (EATs) are studied in detail. An energy redshift as high as 450 meV is obtained in Al0.25GaN0.75/GaN QWs. Also, the abrupt reduction of optical momentum matrix elements is derived as a consequence of quantum-confined Stark effects. EAT energies are compared with recent photoluminescence (PL) experiments and numerical coherence is achieved. We propose that it is the EAT energy, instead of the conduction-valence-interband transition energy that is comparable with the PL energy. To restore the reduced transition rate, we apply an external electric field. Theoretical calculations show that with the presence of the external electric field the optical matrix elements for EAT increase 20 times. (C) 2001 American Institute of Physics.

Effects of polarization field on formation of two-dimensional electron gas in (0001) and (11(2)over-bar0) plane AlGaN/GaN heterostructures

Photoluminescence (PL) and temperature-dependent Hall effect measurements were carried out in (0001) and (11 (2) over bar0) AlGaN/GaN heterostructures grown on sapphire substrates by metalorganic chemical vapor deposition. There are strong spontaneous and piezoelectric electric fields (SPF) along the growth orientation of the (0001) AlGaN/GaN heterostructures. At the same time there are no corresponding SPF along that of the (1120) AlGaN/GaN. A strong PL peak related to the recombination between two-dimensional electron gas (2DEG) and photoexcited holes was observed at 3.258 eV at room temperature in (0001) AlGaN/GaN heterointerfaces while no corresponding PL peak was observed in (11 (2) over bar0). The existence of a 2DEG was observed in (0001) AlGaN/GaN multi-layers with a mobility saturated at 6000 cm(2)/V s below 80 K, whereas a much lower mobility was measured in (11 (2) over bar0). These results indicated that the SPF was the main element to cause the high mobility and high sheet-electron-density 2DEG in AlGaN/GaN heterostructures. (C) 2004 Elsevier B.V. All rights reserved.

Near dipole-dipole effects on the propagation of few-cycle pulse in a dense two-level medium

The propagation behaviors, which include the carrier-envelope phase, the area evolution and the solitary pulse number of few-cycle pulses in a dense two-level medium, are investigated based on full-wave Maxwell-Bloch equations by taking Lorentz local field correction (LFC) into account. Several novel features are found: the difference of the carrier-envelope phase between the cases with and without LFC can go up to pi at some location; although the area of ultrashort solitary pulses is lager than 2 pi, the area of the effective Rabi frequency, which equals to that the Rabi frequency pluses the product of the strength of the near dipole-dipole (NDD) interaction and the polarization, is consistent with the standard area theorem and keeps 2 pi; the large area pulse penetrating into the medium produces several solitary pulses as usual, but the number of solitary pulses changes at certain condition. (C) 2005 Optical Society of America.

Active phase control and frequency chirp effects on supercontinuum generation in high birefringence photonic crystal fiber

An acoustic-optics programmable dispersive filter (AOPDF) was first employed to actively control the linearly polarized femtosecond pump pulse frequency chirp for supercontinuum (SC) generation in a high birefringence photonic crystal fiber (PCF). By accurately controlling the second order phase distortion and polarization direction of incident pulses, the output SC spectrum can be tuned to various spectral energy distributions and bandwidths. The pump pulse energy and bandwidth are preserved in our experiment. It is found that SC with broader bandwidth can be generated with positive chirped pump pulses except when the chirp value is larger than the optimal value, and the same optimal value exists for the pump pulses polarized along the two principal axes. With optimal positive chirp, more than 78% of the pump energy can be transferred to below 750 nm. Otherwise, negative chirp will weaken the blue-shift broadening and the SC bandwidth. (C) 2007 Elsevier B.V. All rights reserved.

Polarization evolution of a few-cycle ultrashort laser pulse propagating in a degenerate three-level medium

The propagation of an arbitrary polarized few-cycle ultrashort laser pulse in a degenerate three-level medium is investigated by using an iterative predictor-corrector finite-difference time-domain method. It is found that the polarization evolution of the ultrashort laser pulse is dependent not only on the initial atomic coherence of the medium but also on the polarization condition of the incident laser pulse. When the initial effective area is equal to 2 pi, complete linear-to-circular and circular-to-linear polarization conversion of few-cycle ultrashort laser pulses can be achieved due to the quantum interference effects between the two different transition paths.

Control of polarization signal distortion by frequency domain phase conjugation in optical fiber systems

Optical frequency domain phase conjugation (FDPC) is based on phase conjugation of spectrum of an input signal. It is equivalent to the phase conjugation and the time reversal of the temporal envelope of an input signal. The use of FDPC to control polarization signal distortion in birefringent optical fiber systems is proposed. Evolution of polarization signals in the system using midway FDPC is analyzed theoretically and simulated numerically. It is shown that the distortion of polarization signals can be controlled effectively by FDPC. The impairments due to dispersion and nonlinear effects can be suppressed simultaneously.

Phase interpretation for polarization-dependent near-field images of high-density gratings

It has been described that the near-field images of a high-density grating at the half self-imaging distance could be different for TE and TM polarization states. We propose that the phases of the diffraction orders play an important role in such polarization dependence. The view is verified through the coincidence of the numerical result of finite-difference time-domain method and the reconstructed results from the rigorous coupled-wave analysis. Field distributions of TE and TM polarizations are given numerically for a grating with period d = 2.3 lambda, which are verified through experiments with the scanning near-field optical microscopy technique. The concept of phase interpretation not only explains the polarization dependence at the half self-imaging distance of gratings with a physical view, but also, it could be widely used to describe the near-field diffraction of a variety of periodic diffractive optical elements whose feature size comparable to the wavelength. (C) 2008 Elsevier B.V. All rights reserved.