Synthesis of GaN nanotip triangle pyramids on 3C-SiC epilayer/Si substrates via an in situ In-doping technique

GaN nanotip triangle pyramids were synthesized on 3C-SiC epilayer via an isoelectronic In-doping technique. The synthesis was carried out in a specially designed two-hot-boat chemical vapor deposition system. In (99.999%) and molten Ga (99.99%) with a mass ratio of about 1:4 were used as the source, and pieces of Si (111) wafer covered with 400-500 nm 3C-SiC epilayer were used as the substrates. The products were analyzed by x-ray diffraction, field emission scanning electron microscopy, high-resolution transmission electron microscopy, selected area electron diffraction, Raman spectroscopy, and photoluminescence measurements. Our results show that the as-synthesized GaN pyramids are perfect single crystal with wurtzite structure, which may have potential applications in electronic/photonic devices.

Controllable Kerr nonlinearity with perfect transparency in the existence of spontaneously generated coherence

We investigate the Kerr nonlinearity of a V-type three-level atomic system where the upper two states decay outside to another state and hence spontaneous generated coherence may exist. It is shown that dark state and hence perfect transparency present under certain conditions. Meanwhile, the Kerr nonlinearity can be controlled by manipulation of the decay rates and the splitting of the two excited states. Therefore, enhanced Kerr nonlinearity without absorption can be obtained under proper parameters.

Synthesis of GaN nanowires and nano-pyramids in a two-hot-boat chemical vapor deposition system via an in-doping technique

A two-hot-boat chemical vapor deposition system was modified from a thermal evaporation equipment. This system has the advantage of high vacuum, rapid heating rate and temperature separately controlled boats for the source and samples. These are in favor of synthesizing compound semiconducting nano-materials. By the system, we have synthesized high-quality wurtzite single crystal GaN nanowires and nanotip triangle pyramids via an in-situ doping indium surfactant technique on Si and 3C-SiC epilayer/Si substrates. The products were analyzed by x-ray diffraction, field emission scanning electron microscopy, highresolution transmission electron microscopy, energy- dispersive x-ray spectroscopy, and photoluminescence measurements. The GaN nanotip triangle pyramids, synthesized with this novel method, have potential application in electronic/ photonic devices for field-emission and laser.

Cathodoluminescence on GaN hexagonal pyramids on submicron dot-patterns via selective MOVPE

Three-dimensional GaN pyramids have been successfully obtained on submicron dot-patterned (0001) sapphire substrates by using the selective metalorganic vapor phase epitaxy (MOVPE) technique. The dot-pattern is a hexagon arranged with a 0.5-mu m width and 1.0-mu m spacing. The GaN structure comprises a hexagonal pyramid covered with six {1 (1) over bar 01} pyramidal facets on the side of a hexagonal pyramid having a (0001) facet on the top. Cathodoluminescence (CL) measurement was carried our. on the hexagonal pyramid at low temperature. Two distinct spectra were observed to occur at about 359 and 329 nm. The higher energy is thought to be related to GaN dot, and the lower one is due to GaN dot band edge emission. The intensities of the two spectra were investigated as a function of temperature in the range of 135-150 K. (C) 2000 Published by Elsevier Science B.V.

Micro-fabricated Al0.3Ga0.7As pyramids for potential SPM applications

A novel technique of manufacturing Al0.3Ga0.7As pyramids by liquid phase epitaxy (LPE) for scanning probe microscopy (SPM) sensors is reported Four meticulously designed conditions-partial oxidation, deficient solute, air quenching and germanium doping result in defect-free homogeneous nucleation and subsequent pyramid formation. Micrometer-sized frustums and pyramids are detected by scanning electron microscopy (SEM). The sharp end of the microtip has a radius of curvature smaller than 50 nm. It is believed that such accomplishments would contribute not only to crystal growth theory, but also to miniature fabrication technology.

Structuring by multi-beam interference using symmetric pyramids

A method for producing optical structures using rotationally symmetric pyramids is proposed. Two-dimensional structures can be achieved using acute prisms. They form by multi-beam interference of plane waves that impinge from directions distributed symmetrically around the axis of rotational symmetry. Flat-topped pyramids provide an additional beam along the axis thus generating three-dimensional structures. Experimental results are consistent with the results of numerical simulations. The advantages of the method are simplicity of operation, low cost, ease of integration, good stability, and high transmittance. Possible applications are the fabrication of photonic micro-structures such as photonic crystals or array waveguides as well as multi-beam optical tweezers. (c) 2006 Optical Society of America.

A NEW TYPE OF SILICON-ON-INSULATOR WITH A PERFECT SURFACE SILICON LAYER

A novel silicon structure consisting of a silicon-on-defect layer (SODL), with enhanced surface Hall mobility in the surface layer on a buried defect layer (DL), has been discovered [J. Li, Nucl. Instr. and Meth. B59/60 (1991) 1053]. SODL material was formed by using proton implantation and subsequent two-step annealing. The implantation was carried out with a Varian 350D ion implanter. Based on the discovery, a standard measurement method (current-voltage curve method) was adopted to measure the true resistivity value of the DL in order to replace the spreading resistivity measurement by which the true resistivity in seriously defective silicon cannot be obtained. By adopting the current-voltage current method, the true resistivity value of the DL is measured to be 4.2 x 10(9) OMEGA cm. The SODL material was proved to be a silicon-on-insulator substrate.

Generalization of Response Number for Dynamic Plastic Response of Shells Subjected to impulsive Loading

A dimensionless number, termed as response number in Zhao [Archive of Applied Mechanics 68 (1998) 524], has been suggested for the dynamic plastic response of beams and plates made up of rigidly perfect plastic materials subjected to dynamic loading. Many theoretical and experimental results can be reformulated into new concise forms with the response number. The concept of a new dimensionless number, response number, termed as Rn(n), is generalized in Zhao [Forschung im Ingenieurwesen 65 (1999) 107] to study the elastic, plastic, dynamic elastic as well as dynamic plastic buckling problems of columns, plates as well as shells. The response number Rn(n) is generalized to the dynamic behaviour of shells of various shapes in the present paper.

General Solution to Two-Dimensional Nonslipping JKR Model with a Pulling Force in an Arbitrary Direction

In this paper, a generalized JKR model is investigated, in which an elastic cylinder adhesively contacts with an elastic half space and the contact region is assumed to be perfect bonding. An external pulling force is acted on the cylinder in an arbitrary direction. The contact area changes during the pull-off process, which can be predicted using the dynamic Griffith energy balance criterion as the contact edge shifts. Full coupled solution with an oscillatory singularity is obtained and analyzed by numerical calculations. The effect of Dundurs' parameter on the pull-off process is analyzed, which shows that a nonoscillatory solution can approximate the general one under some conditions, i.e., larger pulling angle (pi/2 is the maximum value), smaller a/R or larger nondimensional parameter value of Delta gamma/E*R. Relations among the contact half width, the external pulling force and the pulling angle are used to determine the pull-off force and pull-off contact half width explicitly. All the results in the present paper as basic solutions are helpful and applicable for experimenters and engineers.

The scattering of general SH plane wave by interface crack between two dissimilar viscoelastic bodies

The scattering of general SH plane wave by an interface crack between two dissimilar viscoelastic bodies is studied and the dynamic stress,intensity factor at the crack-tip is computed. The scattering problem can be decomposed into two problems: one is the reflection and refraction problem of general SH plane waves at perfect interface (with no crack); another is the scattering problem due to the existence of crack. For the first problem, the viscoelastic wave equation, displacement and stress continuity conditions across the interface are used to obtain the shear stress distribution at the interface. For the second problem, the integral transformation method is used to reduce the scattering problem into dual integral equations. Then, the dual integral equations are transformed into the Cauchy singular integral equation of first kind by introduction of the crack dislocation density function. Finally, the singular integral equation is solved by Kurtz's piecewise continuous function method. As a consequence, the crack opening displacement and dynamic stress intensity factor are obtained. At the end of the paper, a numerical example is given. The effects of incident angle, incident frequency and viscoelastic material parameters are analyzed. It is found that there is a frequency region for viscoelastic material within which the viscoelastic effects cannot be ignored.

Tailoring The Mechanical Performance Of Epoxy Resin By Various Nanoparticles

Flexible organic elastomeric nanoparticles (ENP) and two kinds of rigid inorganic silica nanoparticles were dispersed respectively into a bisphenol-A epoxy resin in order to tailor and compare the performance of mechanical properties. It was found that the well-dispersed flexible ENP greatly enhanced the toughness of the epoxy with the cost of modulus and strength. Comparatively, the rigid silica nanoparticles improved Young's modulus, tensile strength and fracture toughness simultaneously. Both fumed and sol-gel-formed nanosilica particles conducted similar results in reinforcing the epoxy resin, although the latter exhibited almost perfect nanoparticle dispersion in matrix. The toughening mechanisms of nanocomposites were further discussed based on fractographic analysis.

On the influence zone and the prediction of tensile strength of particulate polymeric composites

An intended numerical investigation is carried out. The results indicate that, even if a perfect adhesive bond is preserved between the particles and matrix materials, the two-phase element cell model is unable to predict the strength increment of the particulate polymeric composites (PPC). To explore the main reinforcing mechanism, additional microscopic experiment is performed. An ''influence zone'' was observed around each particle which is measured about 2 to 10 micrometers in thickness for a glass-polyethylene mixture. Then, an improved computational model is presented to include the ''influence zone'' effect and several mechanical behaviors of PPC are well simulated through this new model.

Energy conversions and storage caused by an unsteady poloidal flow in active solar regions

In this paper we discuss coupling processes between a magnetic field and an unsteady plasma motion, and analyze the features of energy storage and conversions in active region. It is pointed out that the static force-free field is insufficient for a discussion of storage processes, and also the pure unsteady plasma rotation is not a perfect approach. In order to analyze the energy storage, we must consider the addition of poloidal plasma motion. The paper shows that because the unsteady poloidal flow is added and coupling occurs between the magnetic field and both the toroidal and the poloidal plasma flows, an unsteady process is maintained which changes the force-free factor with time. Hence, the energy in the lower levels can be transferred to the upper levels, and a considerable energy can be stored in the active region. Finally, another storage process is given which is due to the pure poloidal flow. The article shows that even if there is no twisted magnetic line of force, the energy in the lower levels may still be transferred to the upper levels and stored there.

Adhesive behavior of two-dimensional power-law graded materials

In this paper, we investigate the adhesive contact between a rigid cylinder of radius R and a graded elastic half-space with a Young's modulus varying with depth according to a power-law, E = E-0(y/c(0))(k) (0 < k < 1), while the Poisson's ratio v remains constant. The results show that, for a given value of ratio R/C-0, a critical value of k exists at which the pull-off force attains a maximum; for a fixed value of k, the larger the ratio R/c(0), the larger the pull-off force is. For Gibson materials (i.e., k = 1 and v = 0.5), closed-form analytical solutions can be obtained for the critical contact half-width at pull-off and pull-off force. We further discuss the perfect stick case with both externally normal and tangential loads.

Measurement of velocity profiles in a rectangular microchannel with aspect ratio α = 0.35

In this work, we measured 14 horizontal velocity profiles along the vertical direction of a rectangular microchannel with aspect ratio alpha = h/w = 0.35 (h is the height of the channel and w is the width of the channel) using microPIV at Re = 1.8 and 3.6. The experimental velocity profiles are compared with the full 3D theoretical solution, and also with a Poiseuille parabolic profile. It is shown that the experimental velocity profiles in the horizontal and vertical planes are in agreement with the theoretical profiles, except for the planes close to the wall. The discrepancies between the experimental data and 3D theoretical results in the center vertical plane are less than 3.6%. But the deviations between experimental data and Poiseuille's results approaches 5%. It indicates that 2D Poiseuille profile is no longer a perfect theoretical approximation since a = 0.35. The experiments also reveal that, very near the hydrophilic wall (z = 0.5-1 mu m), the measured velocities are significantly larger than the theoretical velocity based on the no-slip assumption. A proper discussion on some physical effects influencing the near wall velocity measurement is given.