管理干部胜任特征评价方法的初步研究

Competency Assessment Method (CAM) is an important technique of Human Resource Management and Development in theory and practice, especially in personnel selection and training. Based on literatures of related fields, the thesis explored the feasibility of CAM in China. The main results found in this study are as follows: 1. Competencies scored in Behavioral Event Interviews (BEI) are not influenced by length of protocol, by performance in the preceding year. Average level and maximal level of complexity correlate significantly with length of protocol. Total competency frequency of outstanding executives is not significantly different from that of typical executives. These results support McCleland's view. But there is significant correlation between length of protocol and competency frequencies, which which is not agreed by McCleland. We found that competency scores using coding standard of average level and maximal level of complexity show more reliability than that using coding standard of competency frequencies. But this isn't confirmed by McCleland. 2. Inter-rater reliability was studied. The results indicated: total Category Agreement (CA) is 55.45%, over 70 percent of 20 competencies of the inter-rater reliability coefficients based on the classical test theory are significantly correlated. G coefficient based on the generalization theory is 0.85697. 3. Study of criterion sample shows that manager's competencies of China's communication enterprise are as follows: Impact and Influence, Organization Commitment, Information Seeking, Achievement Orientation, Team Leadership, Interpersonal Understanding, Initiative, Market Awareness, Self-confidence, Developing Others. This result in similar to the generic competency model of managers presented in Spencer's book. 4. CAM showed more advantages than the method of experts panel judgement.

Tailoring The Mechanical Performance Of Epoxy Resin By Various Nanoparticles

Flexible organic elastomeric nanoparticles (ENP) and two kinds of rigid inorganic silica nanoparticles were dispersed respectively into a bisphenol-A epoxy resin in order to tailor and compare the performance of mechanical properties. It was found that the well-dispersed flexible ENP greatly enhanced the toughness of the epoxy with the cost of modulus and strength. Comparatively, the rigid silica nanoparticles improved Young's modulus, tensile strength and fracture toughness simultaneously. Both fumed and sol-gel-formed nanosilica particles conducted similar results in reinforcing the epoxy resin, although the latter exhibited almost perfect nanoparticle dispersion in matrix. The toughening mechanisms of nanocomposites were further discussed based on fractographic analysis.

Photorefractive performance of a novel multifunctional inorganic-organic hybridized nanocomposite sensitized by CdS nanoparticles

A novel multifunctional inorganic-organic photorefractive (PR) poly(N-vinyl)-3-[p-nitrophenylazolcarbazolyl-CdS nanocomposites with different molar ratios of US to poly(N-vinyl)-3-[p-nitrophenylazo]carbazolyl (PVNPAK) were synthesized via a postazo-coupling reaction and chemically hybridized approach, respectively. The nanocomposites are highly soluble and could be obtained as film-forming materials with appreciably high molecular weights and low glass transition temperature (T,) due to the flexible spacers. The PVNPAK matrix possesses a highest-occupied molecular orbital value of about -5.36 eV determined from cyclic voltammetry. Second harmonic generation (SHG) could be observed in PVNPAK film without any poling procedure and 4.7 pm/V of effective second-order nonlinear optical susceptibility is obtained. The US particles as photosensitizers had a nanoscale size in PVNPAK adopting transmission electron microscopy. The improvement of interface quality between US and polymer matrix is responsible for efficient photoinduced charge generation efficiency in the nanocomposites. An asymmetric optical energy exchange between two beams on the polymer composites PVNPAK-CdS/ECZ has been found even without an external field in two-beam coupling (TBC) experiment, and the TBC gain and diffraction efficiency of 14.26 cm(-1) and 3.4% for PVNPAK-5-CdS/ECZ, 16.43 cm(-1) and 4.4% for PVNPAK-15-CdS/ECZ were measured at a 647.1 nm wavelength, respectively.

Judd-Oflet analysis of spectrum and laser performance of Ho:YAP crystal end-pumped by 1.91-mu m Tm:YLF laser

The Ho:YAP crystal is grown by the Czochralski technique. The room-temperature polarized absorption spectra of Ho:YAP crystal was measured on a c-cut sample with 1 at% holmium. According to the obtained Judd-Ofelt intensity parameters Omega(2) = 1.42 x 10(-20) cm(2), Omega(4) = 2.92 x 10(-20) cm(2), and Omega(6) = 1.71 x 10(-20) cm(2), this paper calculated the fluorescence lifetime to be 6 ms for I-5(7) -> I-5(8) transition, and the integrated emission cross section to be 2.24 x 10(-18) cm(2). It investigates the room-temperature Ho:YAP laser end-pumped by a 1.91-mu m Tm:YLF laser. The maximum output power was 4.1 W when the incident 1.91-mu m pump power was 14.4W. The slope efficiency is 40.8%, corresponding to an optical-to-optical conversion efficiency of 28.4%. The Ho:YAP output wavelength was centred at 2118 nm with full width at half maximum of about 0.8 nm.

Effects of exposure to 50 Hz magnetic field of 1 mT on the performance of detour learning task by chicks

In the present study, we examined the effects of exposure to an extremely low-frequency magnetic field of 1 mT intensity on learning and memory in Lohmann brown domestic chicks using detour learning task. These results show that 20 h/day exposure to a low

RESERPINE IMPAIRS SPATIAL WORKING-MEMORY PERFORMANCE IN MONKEYS - REVERSAL BY THE ALPHA-2-ADRENERGIC AGONIST CLONIDINE

Repeated daily treatment with the catecholamine-depleting agent, reserpine, dramatically reduced performance on the delayed response task, a test of spatial working memory that depends upon the integrity of the prefrontal cortex. Delayed response performance fell from an average of 27.2/30 trials correct before reserpine treatment to an average of 20.4/30 trials correct after repeated reserpine administration. Injection of the alpha2-adrenergic agonist, clonidine (0.0001-0.05 mg/kg), to chronic reserpine-treated monkeys significantly restored performance on the delayed response task; performance after an optimal dose averaged 27.8/30 trials correct. Clonidine's beneficial effects on delayed response performance were longlasting; monkeys remained improved for more than 24 h after a single clonidine injection. The finding that clonidine is efficacious in reserpinized animals supports the hypothesis that alpha2-adrenergic agonists improve cognitive function through actions at postsynaptic, alpha2-adrenergic receptors on non-adrenergic cells. In contrast to the delayed response task, reserpine had little effect on performance of a visual discrimination task, a reference memory task which does not depend on the prefrontal cortex. These results emphasize the importance of postsynaptic alpha2-adrenergic mechanisms in the regulation of working memory,

Determination of sexual hormones in liquid cosmetics by polymer monolith microextraction coupled with high performance liquid chromatography

A method was presented for the determination of testosterone, methyltestosterone and progesterone in liquid cosmetics by coupling polymer monolith microextraction (PMME) to high performance liquid chromatography with UV detection. A poly (methacrylic acid-ethylene glycol dimethacrylate) monolithic capillary column was selected as the extraction medium, which showed high extraction capacity towards these compounds. To achieve optimum extraction performance, several parameters relating to PMME were investigated, including extraction flow rate and pH value, inorganic salt and organic phase concentration of the sample matrix. By simple dilution with phosphate solution and filtering, the sample solution then could be directly injected into the device for extraction. The limits of detection of testosterone, methyltestosterone and progesterone were calculated to be 2, 3, 2, 8 and 4.6 mu g/L. Good linearity was achieved in the range of 10 to 1000 mu g/L with a linear coefficient. r value above 0. 996. Excellent method reproducibility was found by intra- and inter-day precisions, yielding the relative standard deviations of < 7. 7 % and < 7. 5 %, respectively. Recovery for them in the real samples was between 83% and 119%.

Growth performance of juvenile white sturgeon as affected by feeding regimen

Juvenile (mean +/- SE, 8.6 +/- 0.1 g) white sturgeon Acipenser transmontanus were fed for 8 weeks under one of six feeding regimens: continuously 24 h/d (C24); continuously 12.8 h/d during the day (C12/D), continuously 12.8 h/d at night (C12/N), 6 meals/d (M6), 4 meals/d (M4), and 2 meals/d (M2). Specific growth rate, feed efficiency, and body lipid content were significantly (P < 0.05) affected by the feeding regimen. These variables were highest in the C24 group and lowest in the M2 group; fish in the M6 group showed the second best performance. Specific growth rate and feed efficiency in terms of wet weight in the M6 groups were not significantly different from those in the C24 groups, but specific growth rate in terms of energy and energy retention efficiency were significantly lower. Feeding regimen had no effect on condition factor, hepatosomatic index, coefficient of variation in final body weight, and protein and ash contents. There was no significant difference in these indexes between 12.8-h/d continuous feeding by day or by night. It was concluded that continuous feeding for 24 h/d was the optimum feeding regimen for juvenile white sturgeon.

Improvement of the performance of GaN-based LEDs grown on sapphire substrates patterned by wet and ICP etching

Sapphire substrates patterned by a selective chemical wet and an inductively coupled plasma (ICP) etching technique was proposed to improve the performance of GaN-based light-emitting diodes (LEDs). GaN-based LEDs were fabricated on sapphire substrates through metal organic chemical vapor deposition (MOCVD). The LEDs fabricated on the patterned substrates exhibit improved device performance compared with the conventional LED fabricated on planar substrates when growth and device fabricating conditions were the same. The light output powers of the LEDs fabricated on wet-patterned and ICP-patterned substrates were about 37% and 17% higher than that of LEDs on planar substrates at an injection current of 20 mA, respectively. The enhancement is attributable to the combination of the improvement of GaN-based epilayers quality and the improvement of the light extraction efficiency. (c) 2008 Elsevier Ltd. All rights reserved.

Improved DC and RF performance of AlGaN/GaN HEMTs grown by MOCVD on sapphire substrates

High-quality AlGaN/GaN high electron mobility transistor (HEMT) structures were grown by metalorganic chemical vapor deposition (MOCVD) on 2-in. sapphire substrates. Two-dimensional electron gas (2DEG) mobility of 1410 cm(2)/Vs and concentration of 1.0X10(13) CM-2 are obtained at 295 K from the HEMT structures, whose average sheet resistance and sheet resistance uniformity are measured to be about 395 Omega/sq and 96.65% on 2-in. wafers, respectively. AlGaN/GaN HEMTs with 0.8 mu m gate length and 0.2 mm gate width were fabricated and characterized using the grown HEMT structures. Maximum current density of 0.9 A/ mm, peak extrinsic transconductance of 290 mS/mm, unity cutoff frequency (f(T)) of 20 GHz and maximum oscillation frequency (f(max) of 46 GHz are achieved. These results represent significant improvements over the previously fabricated devices with the same gate length, which are attributed to the improved performances of the MOCVD-grown HEMT structures. (c) 2005 Elsevier Ltd. All rights reserved.

Enhanced performance of p-GaN by Mg delta doping

The electrical and structural properties of Mg delta-doped GaN epilayers grown by MOCVD were investigated. Compared to uniform Mg-doping GaN layers, it has been shown that the delta-doping (delta-doping) process could suppress the dislocation density and enhance the p-type performance. The influence of pre-purge step on the structural properties of GaN was also investigated. The hole concentration of p-GaN decreases when using a pre-purge step. These results can be explained convincingly using a simple model of impurity incorporation under Ga-free growth condition. (C) 2007 Elsevier B.V. All rights reserved.

Performance improvement of GaN based Schottky barrier ultraviolet photodetector by adding a thin AlGaN window layer

We propose a new structure of GaN based Schottky barrier ultraviolet photodetector, in which a thin n-type AlGaN window layer is added on the conventional n(-)-GaN/n(+)-GaN device structure. The performance of the Schottky barrier ultraviolet photodetector is found to be improved by the new structure. The simulation result shows that the new structure can reduce the negative effect of surface states on the performance of Schottky barrier GaN photodetectors, improving the quantum efficiency and decreasing the dark current. The investigations suggest that the new photodetector can exhibit a better responsivity by choosing a suitably high carrier concentration and thin thickness for the AlGaN window layer.