31 resultados para Partially grout

em Chinese Academy of Sciences Institutional Repositories Grid Portal


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An n degree-of-freedom Hamiltonian system with r (1¡r¡n) independent 0rst integrals which are in involution is calledpartially integrable Hamiltonian system. A partially integrable Hamiltonian system subject to light dampings andweak stochastic excitations is called quasi-partially integrable Hamiltonian system. In the present paper, the procedures for studying the 0rst-passage failure and its feedback minimization of quasi-partially integrable Hamiltonian systems are proposed. First, the stochastic averaging methodfor quasi-partially integrable Hamiltonian systems is brie4y reviewed. Then, basedon the averagedIt ˆo equations, a backwardKolmogorov equation governing the conditional reliability function, a set of generalized Pontryagin equations governing the conditional moments of 0rst-passage time and their boundary and initial conditions are established. After that, the dynamical programming equations and their associated boundary and 0nal time conditions for the control problems of maximization of reliability andof maximization of mean 0rst-passage time are formulated. The relationship between the backwardKolmogorov equation andthe dynamical programming equation for reliability maximization, andthat between the Pontryagin equation andthe dynamical programming equation for maximization of mean 0rst-passage time are discussed. Finally, an example is worked out to illustrate the proposed procedures and the e9ectiveness of feedback control in reducing 0rst-passage failure.

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The short-surface waves generated by a 3-D arbitrarily oscillating body floating onwater are discussed. In the far-field off the body, the phase and the amplitude functions ofthe radiated waves are determined by the ray method. An undetermined constant is includ-ed in the amplitude function. From the result of Ref. [1], the near-field boundary layersolution near the body waterline is obtained. The amplitude of this solution depends on thewhole wall shape of the body and the slope at the body waterline on the cross-sections per-pendicular to the waterline. By matching the far-field solution with the near-field bound-ary layer solution, the undetermined constant in the amplitude function of the far-fieldradiated waves is determined. For the special case of a half-submerged sphere which per-forms vertical oscillating motion, the result obtained in this paper is in agreement withthat of Ref. [ 2 ].

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Slip-line field solutions are presented for the ultimate load of submarine pipelines on a purely cohesive soil obeying Tresca yield criterion, taking into account of pipe embedment and pipe-soil contact friction. The derived bearing capacity factors for a smooth pipeline degenerate into those for the traditional strip-line footing when the embedment approaches zero. Parametric studies demonstrate that the bearing capacity factors for pipeline foundations are significantly influenced by the pipeline embedment and the pipe-soil frictional coefficient. With the increase of pipeline embedment, the bearing capacity factor Nc decreases gradually, and finally reaches the minimum value (4.0) when the embedment equals to pipeline radius. As such, if the pipeline is directly treated as a traditional strip footing, the bearing capacity factor Nc would be over evaluated. The ultimate bearing loads increase with increasing pipeline embedment and pipe-soil frictional coefficient.

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X-ray phase imaging with illumination by a partially coherent source with a setup similar to in-line holography is considered. Using the optical transform function, we consider the effects of partial coherence on this x-ray phase imaging for a weak phase object. The optimal contrast and the resolution of phase imaging are analyzed. As the coherence decreases, the imaging contrast and the optimal contrast frequency decrease, and the resolution degrades. It is shown that this contrast-enhanced phase-imaging method can be regarded as a linear bandpass filter and that the bandwidth and the image contrast are changeable. The frequency property of the imaging system can be improved if an incoherent x-ray source with the proper shape is used. (C) 1999 Optical Society of America.

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The theoretical model of direct diffraction phase-contrast imaging with partially coherent x-ray source is expressed by an operator of multiple integral. It is presented that the integral operator is linear. The problem of its phase retrieval is described by solving an operator equation of multiple integral. It is demonstrated that the solution of the phase retrieval is unstable. The numerical simulation is performed and the result validates that the solution of the phase retrieval is unstable.

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We report the experimental generation of a high-quality partially coherent dark hollow beam (DHB) by coupling a partially coherent beam into a multimode fiber (MMF) with a suitable incidence angle. The interference experiment of the generated partially coherent DHB passing through double slits is demonstrated. It is found that the coupling efficiency of the MMF, the quality, and the coherence of the generated partially coherent DHB are closely controlled by the coherence of the input beam. (c) 2008 Optical Society of America.

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A theoretical study of the behaviour of partially coherent beams propagating through oceanic turbulence has been performed. Based on the previously developed knowledge of beam spreading of a partially coherent beam in the atmosphere and the spatial power spectrum of the refractive index of ocean water, we study the normalized root-mean-square width of a partially coherent beam on propagation through oceanic turbulence and its turbulence distance which may be a measure of turbulence resistance. Our analysis indicates that the behaviour of partially coherent beams on propagation may be described by the rate of dissipation of the mean-squared temperature chi(T) and that of salinity chi(S). In terms of a quantity w that defines the contributions of the temperature and salinity distributions to the distribution of the refractive index, chi(S) could be written as a function of chi(T) and w. Therefore, the behaviour of partially coherent beams on propagation can be characterized only by chi(T) for a given w. The results are shown for curved surfaces, from which one can see that partially coherent beams exhibit robust turbulence resistance when the water volume has a smaller chi(T).

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We study the change in the degree of coherence of partially coherent electromagnetic beam (so called electromagnetic Gaussian Schell-model beam). It is shown analytically that with a fixed set of source parameters and under a particular atmospheric turbulence model, an electromagnetic Gaussian Schell-model beam propagating through atmospheric turbulence reaches its maximum value of coherence after the beam propagates a particular distance, and the effective width of the spectral degree of coherence also has its maximum value. This phenomenon is independent of the used turbulence model. The results are illustrated by numerical curves. (c) 2006 Elsevier B.V. All rights reserved.

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Effects of techniques of implanting nitrogen into buried oxide on the characteristics of the partially depleted silicon-on-insulator (SOI) p-channel metal-oxide-semiconductor field-effect transistors (PMOSFETs) have been studied with three different nitrogen implantation doses, 8 x 10(15), 2 x 10(16), and 1 x 10(17) cm(-2). The experimental results show that this technology can affect the threshold voltage, channel hole mobility and output characteristics of the partially depleted SOI PMOSFETs fabricated with the given material and process. For each type of the partially depleted SOI PMOSFET with nitrided buried oxide, the absolute value of the average threshold voltage increases due to the nitrogen implantation. At the same time, the average channel hole mobility decreases because of the nitrogen implantation. In particular, with the high nitrogen implantation doses, the output characteristic curves of the tested transistors present a distinct kink effect, which normally exists in the characteristic output curves of only partially depleted SOI NMOSFETs.

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The effect of implanting nitrogen into buried oxide on the top gate oxide hardness against total irradiation does has been investigated with three nitrogen implantation doses (8 x 10(15), 2 x 10(16) and 1 x 10(17) cm(-2)) for partially depleted SOI PMOSFET. The experimental results reveal the trend of negative shift of the threshold voltages of the studied transistors with the increase of nitrogen implantation dose before irradiation. After the irradiation with a total dose of 5 x 10(5) rad(Si) under a positive gate voltage of 2V, the threshold voltage shift of the transistors corresponding to the nitrogen implantation dose 8 x 10(15) cm(-2) is smaller than that of the transistors without implantation. However, when the implantation dose reaches 2 x 10(16) and 1 x 10(17) cm(-2), for the majority of the tested transistors, their top gate oxide was badly damaged due to irradiation. In addition, the radiation also causes damage to the body-drain junctions of the transistors with the gate oxide damaged. All the results can be interpreted by tracing back to the nitrogen implantation damage to the crystal lattices in the top silicon.

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The effects, caused by the process of the implantation of nitrogen in the buried oxide layer of SIMOX wafer, on the characteristics of partially depleted silicon-on-insulator nMOSFET have been studied. The experimental results show that the channel electron mobilities of the devices fabricated on the SIMON (separation by implanted oxygen and nitrogen) wafers are lower than those of the devices made on the SIMOX (separation by implanted oxygen) wafers. The devices corresponding to the lowest implantation dose have the lowest mobility within the range of the implantation dose given in this paper. The value of the channel electron mobility rises slightly and tends to a limit when the implantation dose becomes greater. This is explained in terms of the rough Si/SiO2 interface due to the process of implantation of nitrogen. The increasing negative shifts of the threshold voltages for the devices fabricated on the SIMON wafers are also observed with the increase of implanting dose of nitrogen. However, for the devices fabricated on the SIMON wafers with the lowest dose of implanted nitrogen in this paper, their threshold voltages are slightly larger on the average than those prepared on the SIMOX wafers. The shifts are considered to be due to the increment of the fixed oxide charge in SiO2 layer and the change of the density of the interface-trapped charge with the value and distribution included. In particular, the devices fabricated on the SIMON wafers show a weakened kink effect, compared to the ones made on the SIMOX wafers.

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The mechanism of hole charge transfer in DNA of various lengths and sequences is investigated based on a partially coherent tunneling theory (Zhang et al., J Chem Phys 117:4578, 2002), where the effects of phase-breaking in adenine-thymine and guanine-cytosine base pairs are treated on equal foot. This work aims at providing a self-consistent microscopic interpretation for rate experiments on various DNA systems. We will also clarify the condition under which the simple superexchange-mediated-hopping picture is valid, and make some comments on the further development of present theory.