Influence of phosphate precursors on the structures of sodium aluminophosphate sols, gels and glasses

Transparent and homogeneous aluminophosphate gels and glasses have been widely synthesized through an aqueous sol-gel route, extending significantly the glass-forming range compared to that accessible via the melt-cooling route. Different phosphorus precursors, sodium polyphosphate (NaPO3) and orthophosphate species (NaH2PO4 and/or H3PO4) were compared with regard to the macroscopic properties and the microscopic structure of the resultant gels and glasses as characterized by extensive high-resolution liquid- and solid-state NMR. Sodium polyphosphate solution results in a substantially wider composition range of homogenous gel formation than orthophosphate solutions, and the two routes produce significant structural differences in the sol and xerogel states. Nevertheless, the structures of the glasses obtained upon gel annealing above 400 degrees C are independent of the P-precursors used. (c) 2007 Elsevier B.V. All rights reserved.

A comparison between AlN films grown by MOCVD using dimethylethylamine alane and trimethylaluminium as the aluminium precursors

Aluminium nitride (AlN) films grown with dimethylethylamine alane (DMEAA) are compared with the ones grown with trimethylaluminium (TMA). In the high-resolution x-ray diffraction Omega scans, the full width at half maximum (FWHM) of (0002) AlN films grown with DMEAA is about 0.70 deg, while the FWHM of (0002) AlN films grown with TMA is only 0.11 deg. The surface morphologies of the films are different, and the rms roughnesses of the surface are approximately identical. The rms roughness of AlN films grown with DMEAA is 47.4 nm, and grown with TMA is 69.4 nn. Although using DMEAA as the aluminium precursor cannot improve the AlN crystal quality, AlN growth can be reached at low temperature of 673 K. Thus, DMEAA is an alternative aluminium precursor to deposit AlN film at low growth temperatures.

Metalorganic chemical vapor deposition of GaNAs alloys using different Ga precursors

The GaNAs alloys have been grown by metalorganic chemical vapor deposition (MOCVD) using dimethylhydrazine (DMHv) as the nitrogen precursor, triethylgallium (TEGa) and trimethylgallium (TMGa) as the gallium precursors, respectively. Both symmetric (004) and asymmetric (1 1 5) high-resolution X-ray diffraction (HRXRD) were used to determine the nitrogen content in GaNAs layers. Secondary ion mass spectrometry (SIMS) was used to obtain the impurity content. T e influence of different Ga precursors on GaNAs quality has been investigated. Phase separation is observed in the < 1 1 5 > direction when using TMGa as the Ga precursor but not observed when using TEGa. This phenomenon should originate from the parasitic reaction between the Ga and N precursors. Furthermore. samples grown with TEGa have better quality and less impurity contamination than those with TMGa. Nitrogen content of 5.742% has been achieved using TEGa and no phase separation observed in the sample. (C) 2002 Elsevier Science B.V. All rights reserved.

CBE GROWTH OF GAAS/GAAS, GAAS/SI AND ALGAAS/GAAS USING TEG, ASH3 AND AMINE-ALANE PRECURSORS

The growth of high quality AlGaAs by CBE bas been limited by the high levels of carbon and oxygen contamination. The use of alane based precursors offers a significant reduction in such contamination. We report for the first time the CBE growth of AlxGa1-xAs from triethylgallium, dimethylethylamine-alane and arsine, and compare with. growth from triethylgallium, trimethylamine-alane and arsine. Some preliminary results of work on the CBE growth of GaAs on silicon will also be reported.

Highly cis-1,4 selective polymerization of dienes with homogeneous Ziegler-Natta catalysts based on NCN-pincer rare earth metal dichioride precursors

The first aryldiimine NCN-pincer ligated rare earth metal dichlorides (2,6-(2,6-C6H3R2N=CH)(2)C6H3)LnCl(2)(THF)(2) (Ln = Y, R = Me (1), Et (2), Pr (3); R = Et, Ln = La (4), Nd (5), Gd (6), Sm (7), Eu (8), Tb (9), Dy (10), Ho (11), Yb (12), Lu (13)) were successfully synthesized via transmetalation between 2,6-(2,6-C2H3-R2N=CH)(2)-C6H3Li and LnCl(3)(THF)(1 similar to 3.5). These complexes are isostructural monomers with two coordinating THF molecules, where the pincer ligand coordinates to the central metal ion in a kappa C:kappa N: kappa N' tridentate mode, adopting a meridional geometry.

Highly 3,4-selective living polymerization of isoprene with rare earth metal fluorenyl N-heterocyclic carbene precursors

Fluorenyl modified N-heterocyclic carbene ligated rare earth metal bis(alkyl) complexes, (Flu-NHC)Ln(CH2SiMe3)2 (Flu-NHC = (C13H8CH2CH2(NCHCCHN)C6H2Me3-2,4,6); Ln = Sc (1a); Ln = Y (1b); Ln = Ho (1c); Ln = Lit (1d)), were synthesized and fully characterized by NMR and X-ray diffraction analyses. Complexes Ib-d with the activation of (AlBu3)-Bu-i and [Ph3C][B(C6F5)4] exhibited high activity, medium syndio-but remarkably high 3,4-regio-selectivity, and the unprecedented livingness for the polymerization of isoprene. Such distinguished catalytic performances could be maintained under various monomer-to-initiator ratios (500-5000) and broad polymerization temperatures (25-80 degrees C).

Low-temperature synthesis of oil-soluble CdSe, CdS, and CdSe/CdS core - Shell nanocrystals by using various water-soluble anion precursors

Colloidal CdSe and CdS quantum dots were synthesized at low temperatures (60-90 degrees C) by a two-phase approach at a toluene-water interface. Oil-soluble cadmium myristate (Cd-MA) was used as cadmium source, and water-soluble Na2S, thiourea, NaHSe, Na2SeSO3, and selenourea were used as sulfur and selenium sources, respectively. When a cadmium precursor in toluene and a selenium precursor in water were mixed, CdSe nanocrystals were achieved at a toluene-water interface in the range of 1.2-3.2 nm in diameter. Moreover, we also synthesized highly luminescent CdSe/CdS core-shell quantum dots by a two-phase approach using poorly reactive thiourea as sulfur source in an autoclave at 140 degrees C or under normal pressure at 90 degrees C. Colloidal solutions of CdSe/CdS core-shell nanocrystals exhibit a photoluminescence quantum yield (PL QY) up to 42% relative to coumarin 6 at room temperature.