Seismic Responses of a Hemispherical Alluvial Valley to SV Waves: A Three-Dimensional Analytical Approximation

An analytical solution to the three-dimensional scattering and diffraction of plane SV-waves by a saturated hemispherical alluvial valley in elastic half-space is obtained by using Fourier-Bessel series expansion technique. The hemispherical alluvial valley with saturated soil deposits is simulated with Biot's dynamic theory for saturated porous media. The following conclusions based on numerical results can be drawn: (1) there are a significant differences in the seismic response simulation between the previous single-phase models and the present two-phase model; (2) the normalized displacements on the free surface of the alluvial valley depend mainly on the incident wave angles, the dimensionless frequency of the incident SV waves and the porosity of sediments; (3) with the increase of the incident angle, the displacement distributions become more complicated; and the displacements on the free surface of the alluvial valley increase as the porosity of sediments increases.

Ancient Chinese algorithm: The Ying Buzu Shu (method of surplus and deficiency) vs Newton iteration method

Air exploratory discussion of an ancient Chinese algorithm, the Ying Buzu Shu, in about 2nd century BC, known as the rule of double false position in the West is given. In addition to pointing out that the rule of double false position is actually a translation version of the ancient Chinese algorithm, a comparison with well-known Newton iteration method is also made. If derivative is introduced, the ancient Chinese algorithm reduces to the Newton method. A modification of the ancient Chinese algorithm is also proposed, and some of applications to nonlinear oscillators are illustrated.

Room temperature mobility above 2100 cm2/Vs in Al0.3Ga0.7N/AIN/GaN heterostructures grown on sapphire substrates by MOCVD

Al0.3Ga0.7N/AlN/GaN HEMT structures with significantly high mobility have been grown by metalorganic chemical vapor deposition (MOCVD) on sapphire substrates. At room temperature (RT) a Hall mobility of 2104 cm(2)/Vs and a two-dimensional electron gas (2DEG) density of 1.1x10(13) cm(-2) are achieved, corresponding to a sheet resistance of 277.8 Omega/sq. The elimination of V-shaped defects were observed on Al0.3Ga0.7N/AlN/GaN HEMT structures and correlated with the increase of 2DEG mobility. (c) 2006 WILEY-VCH Verlag GmbH & Co KGaA, Weinheim.

Polyimide structure-property relationships - I. Polyimide properties vs dianhydride configuration

X-ray crystal structures of 2,2',3,3'-and 3,3',4,4'-biphenyltetracarboxylic dianhydride (2,2',3,3'- and 3,3',4,4'-BPDA) were determined. The dianhydride isomers have different symmetry caused by difference in two anhydride group positions and the dihedral angles between the two phenyl rings are 62.9 degrees for 2,2',3,3',-BPDA and 0 degrees for 3,3',4,4'-BPDA respectively. The polyimides from 2,2',3,3'-BPDA exhibit enhanced solubility, higher thermal stability, and higher glass transition temperature (T-g) compared with those from 3,3',4,4'-BPDA.