Quantum interference in laser-induced nonsequential double ionization in diatomic molecules: Role of alignment and orbital symmetry

We address the influence of the orbital symmetry and the molecular alignment with respect to the laser-field polarization on laser-induced nonsequential double ionization of diatomic molecules, in the length and velocity gauges. We work within the strong-field approximation and assume that the second electron is dislodged by electron-impact ionization, and also consider the classical limit of this model. We show that the electron-momentum distributions exhibit interference maxima and minima due to electron emission at spatially separated centers. The interference patterns survive integration over the transverse momenta for a small range of alignment angles, and are sharpest for parallel-aligned molecules. Due to the contributions of the transverse-momentum components, these patterns become less defined as the alignment angle increases, until they disappear for perpendicular alignment. This behavior influences the shapes and the peaks of the electron-momentum distributions.

Physical Blocking Neural Tube Closure Affects Radial Intercalation and Neural Crest Midline-directed Migration in Xenopus Dorsal Explants

神经管闭合缺陷(NTDs)是一种严重的先天畸形疾病,在新生儿中有千分之一的发病率.神经管融合前后,多种组织参与形态发生运动.神经管一经融合,神经嵴细胞就会向背侧中线方向产生单极突出并向此方向迁移形成神经管的顶部.与此同时,神经管从腹侧开始发生辐射状切入以实现单层化.在此,我们在非洲爪蟾的移植体中机械阻断神经管的闭合以检测其细胞运动及随后的图式形成.结果显示神经管闭合缺陷的移植体不能形成单层化的神经管,并且神经嵴细胞滞留在侧面区域不能向背侧中线迁移,而对神经前体标记基因的检测显示神经管的背腹图式形成并未受到影响.以上结果表明神经管的融合对于辐射状切入和神经嵴细胞向背侧中线方向的迁移过程是必需的,而对于神经管的沿背腹轴方向的图式形成是非必需的.

Low-threshold-current and high-out-power 660 nm laser diodes with a p-GaAs current blocking layer for DVD-RAM/R

We investigate a new structure of high-power 660-nm AlGaInP laser diodes. In the structure, a p-GaAs layer is grown on the ridge waveguide serving as the current-blocking layer, and nonabsorbing windows are only fabricated near the cavity facets to increase the catastrophic-optical-damage level. Stable fundamental mode operation was achieved at up to 80 mW without kinks, and the maximum output power was 184 mW at 22 degrees C. The threshold current was 40 mA.

Orbital magnetization in semiconductors

National Natural Science Foundation of China 60821061 60776061 10604010 60776063

Blocking of the polaron effect and spin-split cyclotron resonance in a two-dimensional electron gas

Cyclotron resonance (CR) of high density GaAs quantum wells exhibits well-resolved spin splitting above the LO-phonon frequency. The spin-up and spin-down CR frequencies are reversed relative to the order expected from simple band nonparabolicity. We demonstrate that this is a consequence of the blocking of the polaron interaction which is a sensitive function of the filling of the Landau levels.

Native-oxidized InAlAs blocking layer buried heterostructure InGaAsP-InP MQW laser for high-temperature operation

A novel idea of InAlAs native oxide utilized to replace the p-n-p-n thyristor blocking layer and improve the high-temperature performance of buried heterostructure InGaAsP-InP laser is first proposed and demonstrated. A characteristic temperature (T-0) of 50 K is achieved from an InA1As native oxide buried heterostructure (NOBH) InGaAsP-InP multiquantum-well laser with 1.5-mu m-wide diode leakage passage path. The threshold current and slope efficiency of NOBH laser changes from 5.6 mA, 0.23 mW/mA to 28 mA, 0.11 mW/mA with the operating temperature changing from 20 degrees C to 100 degrees C. It is comparable to conventional p-n reverse biased junction BH laser with minimized diode leakage current, and is much better than the buried ridge strip with proton implanted laterally confinement laser.

Buried heterostructure InGaAsP/InP strain-compensated multiple quantum well laser with a native-oxidized InAlAs current blocking layer

An InAlAs native oxide is used to replace the p-n reverse-biased junction in a conventional buried heterostructure InP-based laser. This technique reduces the number of regrowth steps and eliminates leakage current under high-temperature operation. The InAlAs native oxide buried heterostructure (NOBH) laser with strain-compensated InGaAsP/InP multiple quantum well active layers has a threshold current of 5.6 mA, a slope efficiency of 0.23 mW/mA, and a linear power up to 22.5 mW with a HR-coated facet. It exhibits single transverse mode with lasing wavelength at 1.532 mu m. A characteristic temperature (T-0) of 50 K is obtained from the NOBH laser with a nonoptimized oxide layer width. (C) 1998 American Institute of Physics. [S0003-6951(98)01352-7].

Native oxided AlAs current blocking layer for AIGaInP high brightness light emitting diodes

Native Oxide AlAs layer were employed to block the current injection from the tup anode. The luminous intensity exceeded 75 mcd of the LED chip with native oxide AlAs layer sandwiched 5 mu m AlGaAs current spreading layer under 20 mA current injection. Electrical and optical properties the LED chip and plastically sealed lamp were measured. Aging of the LED chip and lamp were performed under 70 degrees C and room temperature, Experiment results shown that there is no apparent effect of the native oxided AlAs layer and the process on the reliability of the LED devices.

The orbital scale evolution of regional climate recorded in a long sediment core from Heqing；China

IEECAS SKLLQG

Medium-spin states in Ge-70 and the role of the g(9/2) orbital

Medium-spin states of Ge-70 have been studied via the Ni-60(C-12,2p gamma)Ge-70 reaction at 45 MeV. The ground-state band and the second 0(+) band have been extended to the 12(+) and 8(+) states, respectively. Two negative-parity bands, one of which has a coupled structure and the other has a decoupled structure, have been observed additionally. Although the latter decoupled structure was known up to the (21(-)) state from a previous experiment, the part of the level scheme up to the 15(-) state has been largely modified by the present experiment. Backbendings observed in the positive- and negative-parity yrast bands have been compared with those of the neighboring even Ge isotopes. The experimental level structure has been compared with the shell-model calculations in the model space (2p(3/2), 1f(5/2), 2(p1/2), 1g(9/2)) employing two kinds of effective interactions, one of which is an extended P + QQ interaction with monopole interactions and the other is developed from a renormalized G matrix. Microscopic structures of the observed bands have been discussed with the help of the shell-model calculations.