Enhanced broadband near-infrared luminescence and optical amplification in Yb-Bi codoped phosphate glasses

Yb-Bi codoped phosphate glass was prepared and its properties were compared with Bi-doped phosphate glass. The broadband infrared luminescence intensity from Yb-Bi codoped glass was similar to 32 times stronger than that of Bi-doped glass. The single-pass optical amplification was measured on a traditional two-wave mixing configuration. No optical amplification was observed in Bi-doped glass, while apparent broadband optical amplification between 1272 and 1336 nm was observed from Yb-Bi codoped glass with 980 nm laser diode excitation. The highest gain coefficient at 1272 nm of Yb-Bi codoped glass reached to 2.62 cm(-1). Yb-Bi codoped phosphate glass is a promising material for broadband optical amplification. (C) 2008 American Institute of Physics.

Enhanced broadband near-infrared luminescence from transparent Yb 3+/Ni2+ codoped silicate glass ceramics

The near-infrared emission intensity of Ni2+ in Yb3+/Ni2+ codoped transparent MgO-Al2O3-Ga2O3-SiO2-TiO2 glass ceramics could be enhanced up to 4.4 times via energy transfer from Yb3+ to Ni2+ in nanocrystals. The best Yb2O3 concentration was about 1.00 mol%. For the Yb3+/Ni2+ codoped glass ceramic with 1.00 mol% Yb2O3, a broadband near-infrared emission centered at 1265 nm with full width at half maximum of about 300 nm and lifetime of about 220 mu s was observed. The energy transfer mechanism was also discussed. (C) 2008 Optical Society of America.

Enhanced broadband near-infrared luminescence in transparent silicate glass ceramics containing Yb3+ ions and Ni2+-doped Li Ga5 O8 nanocrystals

Spectral properties of Yb3+/Ni2+ codoped transparent silicate glass ceramics containing LiGa5O8 nanocrystals were investigated. The near-infrared emission intensity of Ni2+ was largely increased with Yb3+ codoping due to Yb3+-> Ni2+ energy transfer. The qualitative calculation of the energy transfer constant Cs-a and rate Ps-a showed that the Yb3+-> Ni2+ energy transfer was much greater than in the opposite direction. Yb3+/Ni2+ codoped glass ceramics with 0.75 mol % Yb2O3 exhibited a near-infrared emission with full width at half maximum of 290 nm and fluorescent lifetime of 920 mu s. The glass ceramics are promising for broadband optical amplification.

Near-infrared luminescence from sol-gel materials doped with holmium(III) and thulium(III) complexes

A series of ternary Ln(tta)(3)L complexes (Ln = Ho, Tm; Htta = 2-thenoyltrifluoroacetone; L = 1,10-phenanthroline, 2,2'-bipyridine, or triphenyl phosphate oxide) and their corresponding sol-gel hybrid materials formed via the in situ synthesis process (designated as Ln-T-L gel) were reported. The complexes and the gels were studied in detail, which suggest the complexes have been successfully synthesized in the corresponding gels.

CuIn(WO4)(2) nanospindles and nanorods: controlled synthesis and host for lanthanide near-infrared luminescence properties

CuIn(WO4)(2) porous nanospindles and nanorods were synthesized through a low-cost hydrothermal method without introducing any template or surfactants. An interesting formation mechanism, namely "oriented attachment", was observed for the growth of nanorods based on the experimental process and the anisotropic intrinsic crystalline structure of CuIn(WO4)(2), which is uncommon in such a system. The near-infrared luminescence of lanthanide ions (Er, Nd, Yb and Ho) doped CuIn(WO4)(2) nanostructures, especially in the 1300-1600 nm region, was discussed and of particular interest for telecommunications applications. X-Ray diffraction, scanning electron microscopy, transmission electron microscopy, electron diffraction and photoluminescence spectra were used to characterize these materials.

Broadband infrared luminescence from bismuth-doped GeS2-Ga2S3 chalcogenide glasses

Near-infrared luminescence is observed from bismuth-doped GeS2-Ga2S3 chalcogenide glasses excited by an 808 nm laser diode. The emission peak with a maximum at about 1260 nm is observed in 80GeS(2)-20Ga(2)S(3):0.5Bi glass and it shifts toward the long wavelength with the addition of Bi gradually. The full width of half maximum (FWHM) is about 200 nm. The broadband infrared luminescence of Bi-doped GeS2-Ga2S3 chalcogenide glasses may be predominantly originated from the low valence state of Bi, such as Bi+. Raman scattering is also conducted to clarify the structure of glasses. These Bi-doped GeS2-Ga2S3 chalcogenide glasses can be applied potentially in novel broadband optical fibre amplifiers and broadly tunable laser in optical communication system.

Self-Assembled Growth of Agln(MoO4)(2) Submicroplates into Hierarchical Structures and Their Near-Infrared Luminescent Properties

Layer-controlled hierarchical flowerlike AgIn(MoO4)(2) microstructures with "clean" surfaces using submicroplates as building blocks without introducing any template have been fabricated through a low-cost hydrothermal method. The near-infrared luminescence of lanthanide ion (Nd, Er, and Yb) doped AgIn(MoO4)(2) microstructures, in the 1300-1600 nm region, was discussed and is of particular interest for telecommunication applications. X-ray diffraction, scanning electron microscopy, transmission electron microscopy, electron diffraction, and photoluminescence spectra were used to characterize these materials.

Novel Near-Infrared Luminescent Hybrid Materials Covalently Linking with Lanthanide [Nd(III), Er(III), Yb(III), and Sm(III)] Complexes via a Primary beta-Diketone Ligand: Synthesis and Photophysical Studies

A series of novel, colorless, and transparent sot-gel derived hybrid materials Ln-DBM-Si covalently grafted with Ln(DBM-OH)(3)center dot 2H(2)O (where DBM-OH = o-hydroxydibenzoylmethane, Ln = Nd, Er, Yb, and Sin) were prepared through the primary beta-diketone ligand DBM-OH. The structures and optical properties of Ln-DBM-Si were studied in detail. The investigation results revealed that the lanthanide complexes were successfully in situ grafted into the corresponding hybrids Ln-DBM-Si. Upon excitation at the maximum absorption of ligands, the resultant materials displayed excellent near-infrared luminescence.

Bi-doped BaF2 crystal for broadband near-infrared light source

Bi-doped BaF2 crystal was grown by the temperature gradient technique and its spectral properties were investigated. The absorption, emission and excitation spectra were measured at room temperature. Two broadband emissions centered at 1070 and 1500 nm were observed in Bi-doped BaF2 crystal. This extraordinary luminescence should be ascribed to Bi-related centers at distinct sites. We suggest Bi2+ or Bi+ centers adjacent to F vacancy defects are the origins of the observed NIR emissions. (C) 2009 Optical Society of America

Near infrared broadband emission from bismuth-dysprosium codoped chalcohalide glasses

We investigate the broadband infrared emission of bismuth doped and bismuth/dysprosium codoped chalcohalide glasses. It is found that the bismuth/dysprosium codoping can drastically enhance the fluorescence as compared with either bismuth or dysprosium doped glasses. Meanwhile, the full width at half maximum of bismuth/dysprosium codoped glasses is over 170 nm, which is the largest value among all the reported rare-earth doped chalcohalide glasses. An ideal way for energy consumption between bismuth and dysprosium ions is supposed. Such improved gain spectra of both bismuth and dysprosium ions may have potential applications in developing broadband fibre amplifiers.