Buffer-gas-induced narrowing of electromagnetically induced transparent spectra for an open system

We have investigated the spectra of the electromagnetically induced transparency (EIT) when a cell is filled with a buffer gas. Our theoretical results show that the buffer gas can induce a narrower spectra line and steeper dispersion than those of the usual EIT case in a homogeneous and Doppler broadened system. The linewidth decreases with the increase of the buffer gas pressure. This narrow spectra may be applied to quantum information processing, nonlinear optics and atomic frequency standard.

Spectral narrowing of negatively chirped femtosecond pulse by cross-phase modulation in a single-mode optical fiber

We demonstrate theoretically that the negatively chirped femtosecond laser pulse can be spectrally narrowed by cross-phase modulation. The new view is well Supported by numerical simulation. The negative chirp method in fibers might be useful in all optical wavelength switching applications. (c) 2005 Elsevier B.V. All rights reserved.

Narrowing of band gap and low-temperature spin glass behavior of FeNi co-doped ZnO nanowires

This letter reports on the Raman, optical and magnetic properties of FeNi co-doped ZnO nanowires prepared via a soft chemical solution method. The microstructural investigations show that the NiFe co-dopants are substituted into wurtzite ZnO nanostructure without forming any secondary phase. The co-doped nanowires show a remarkable reduction of 34 nm (267.9 meV) in the optical band gap, while suppression in the deep-level defect transition in visible luminescence. Furthermore, these nanowires exhibit ferromagnetism and an interesting low-temperature spin glass behavior, which may arise due to the presence of disorder and strong interactions of frustrated spin moments of Ni and Fe co-dopants on the ZnO lattice sites. Copyright (C) EPLA, 2009

Band gap narrowing in heavily B doped Si1-xGex strained layers

This paper presents a comprehensive study of the effect of heavy B doping and strain in Si1-xGex strained layers. On the one hand, bandgap narrowing (BGN) will be generated due to the heavy doping, on the other hand, the dopant boron causes shrinkage in the lattice constant of SiGe materials, thus will compensate for part of the strain. Taking the strain compensation of B into account for the first time and uesing the with semi-empirical method, the Jain-Roulston model is modified. And the real BGN distributed between the conduction and valence bands is calculated, which is important for the accurate design of SiGe HBTs.

Effect of heavily doped boron on bandgap narrowing of strained SiGe layers

Taking into account the compensation effect of B to Ge in strained SiGe layers for the first time, the effect of heavily doped boron on the bandgap narrowing of strained SiGe layers is calculated, and the classical Jain-Roulston (J-R) model is modified. The results show that our modified J-R model well fits the experimental values. Based on the modified J-R model, the real bandgap narrowing distribution between the conduction and valence bands is further calculated, which has great influence on modelling the electrical characteristics of SiGe heterojunction bipolar transistors.

Asymptotic analysis based on K-S constitutive law for a rubber wedge compressed by a line load at its tip

In the present paper, a rubber wedge compressed by a line load at its tip is asymptotically analyzed using a special constitutive law proposed by Knowles and Sternberg (K-S elastic law) [J. Elasticity 3 (1973) 67]. The method of dividing sectors proposed by Gao [Theoret. Appl. Fract, Mech. 14 (1990) 219] is used. Domain near the wedge tip can be divided into one expanding sector and two narrowing sectors. Asymptotic equations of the strain-stress field near the wedge tip are derived and solved numerically. The deformation pattern near a wedge tip is completely revealed. A special case. i.e. a half space compressed by a line load is solved while the wedge angle is pi.

Quantum Efficiency And Temperature Coefficients Of Gainp/Gaas Dual-Junction Solar Cell

GaInP/GaAs dual-junction solar cell with a conversion efficiency of 25.2% has been fabricated using metalorganic chemical vapor deposition (MOCVD) technique. Quantum efficiencies of the solar cell were measured within a temperature range from 25 to 160A degrees C. The results indicate that the quantum efficiencies of the subcells increase slightly with the increasing temperature. And red-shift phenomena of absorption limit for all subcells are observed by increasing the cell's work temperature, which are consistent with the viewpoint of energy gap narrowing effect. The short-circuit current density temperature coefficients dJ (sc)/dT of GaInP subcell and GaAs subcell are determined to be 8.9 and 7.4 mu A/cm(2)/A degrees C from the quantum efficiency data, respectively. And the open-circuit cell voltage temperature coefficients dV (oc)/dT calculated based on a theoretical equation are -2.4 mV/A degrees C and -2.1 mV/A degrees C for GaInP subcell and GaAs subcell.

负啁啾高强度飞秒脉冲在正常色散材料中传输特性研究

利用块状正常色散材料作非线性介质，实验研究了负啁啾强激光飞秒脉冲在正常色散材料的传输过程中，脉冲波形及频谱随入射脉冲能量的变化特性．实验发现，负啁啾脉冲经过材料后激光光谱在被整形和压缩的同时，脉冲宽度也被压缩．实验获得的压缩脉冲宽度短于相等光谱宽度下的双曲正割转换极限脉冲宽度。数值模拟结果显示，在实验条件下模拟结果具有同样的变化特性．

再生放大器宽带光谱整形的双折射片设计

提出了一种用于再生放大器中展宽光谱的双折射片的设计方法，利用这种方法设计了厚度为761微米的石英双折射片，并将其插入钛宝石再生放大器中，有效抑制了增益窄化效应，实验的结果和理论计算一致。使用设计的石英双折射片后光谱带宽由使用前的28nm展宽到了62nm，最后压缩脉冲为23fs。

Generation of 17-TW 23-fs pulses with a two-stage Ti : Sapphire amplifier at repetition rate 10 Hz

We have developed a two-stage Ti:sapphire amplifier system which can produce 17-TW/23-fs pulses at a repetition rate 10 MHz. A birefringent plate is used in the regenerative amplifier to alleviate gain narrowing, while an all-reflective cylindrical-mirror-based pulse stretcher and an acousto-optic programmable dispersive filter (AOPDF) are used to compensate for the higher order dispersion of the system.

Coherent spectroscopy of the Rb-87 Fg=1 -> F-e=0 closed transition

This paper has observed linewidth narrowing of dark states in rubidium cell by using the Hanle configuration. The reduction of the coherent resonance width under the transition of Rb-87 F-g = 1 -> F-e = 0 is observed and the qualitative explanation about its mechanism is presented. Multiple subnatural width dips are obtained with a linearly polarized laser beam for the transition of Rb-87 F-g = 0, 1, 2. The feature of negative and positive slope, namely dispersionlike feature, is observed in the transmitted light.

Spectral shaping of femtosecond pulses with a prism-waveguide coupler

We report a novel technique for spectral shaping of femtosecond pulses employing a prism-waveguide coupler (PWC). It is demonstrated that the PWC is capable of producing a frequency-dependent loss with greater attenuation at the peak of the spectrum profile of femtosecond pulses than in the wings, which is especially useful for compensation for gain narrowing in most chirped-pulse amplification laser systems.

Fields of apertured polychromatic laser beams with Gaussian and Hermite-Gaussian transverse modes

Starting from the Huygens-Fresnel diffraction integral, the field expressions of apertured polychromatic laser beams with Gaussian and Hermite-Gaussian transverse modes are derived. Influence of the bandwidth on the intensity distributions of the laser beams is analyzed. It is found that when the bandwidth increases, the amplitudes and numbers of the intensity spikes decrease and beam uniformity is improved in the near field and the width of transverse intensity distribution of the apertured beams decreases in the far field. Thus, the smoothing and narrowing effects can be achieved by increasing the bandwidth. Also, these effects are found in the laser beams with Hermite-Gaussian transverse modes as the bandwidth increases.(c) 2006 Elsevier Ltd. All rights reserved.

变栅距光栅实现啁啾脉冲光谱整形

为了充分利用放大介质的增益带宽，获得脉宽更短，功率更高的输出脉冲，需要将输入到主放大链的种子脉冲进行光谱整形来补偿放大过程中的增益窄化效应。提出了利用变栅距反射光栅实现中心波长1053nm，谱宽6nm啁啾脉冲的光谱整形。运用严格的光栅衍射耦合波理论分析光栅的衍射特性，发现该方案不会引入相位畸变。分别计算和分析了刻槽深度、入射角大小、光栅周期以及入射光波长的变化对衍射效率的影响，通过选取适当的光栅参量可获得0．5％～84％的光谱调制深度。