Unique structure and photoluminescence of Au/CdTe nanostructure materials

Unique nanostructure materials with highly ordered spherical aggregates have been obtained by self-organization of single CdTe nanocrystals using gold nanoparticles as seeds, and a red shift of the photoluminescence peak was observed.

Nonradiative recombination effect on photoluminescence decay dynamics in GaInNAs/GaAs quantum wells - art. no. 61180Z

The nonradiative recombination effect on the photoluminescence (PL) decay dynamics in GaInNAs/GaAs quantum wells is studied by photoluminescence and time-resolved photoluminescence under various excitation intensities and temperatures. It is found that the PL decay dynamics strongly depends on the excitation intensity. In particular, under the moderate excitation levels the PL decay curves exhibit unusual non-exponential behavior and show a convex shape. By introducing a new concept of the effective concentration of nonradiative recombination centers into a rate equation, the observed results are well simulated. In the cw PL measurement, a rapid PL quenching is observed even at very low temperature and is of the excitation power dependence. These results further demonstrate that the non-radiative recombination process plays a very important role on the optical properties of GaInNAs/GaAs quantum wells.

Nano-modification inside transparent materials by femtosecond laser single beam

Periodic nanostructures along the polarization direction of light are observed inside silica glasses and tellurium dioxide single crystal after irradiation by a focused single femtosecond laser beam. Backscattering electron images of the irradiated spot inside silica glass reveal a periodic structure of stripe-like regions of similar to 20 nm width with a low oxygen concentration. In the case of the tellurium dioxide single crystal, secondary electron images within the focal spot show the formation of a periodic structure of voids with 30 nm width. Oxygen defects in a silica glass and voids in a tellurium dioxide single crystal are aligned perpendicular to the laser polarization direction. These are the smallest nanostructures below the diffraction limit of light, which are formed inside transparent materials. The phenomenon is interpreted in terms of interference between the incident light field and the electric field of electron plasma wave generated in the bulk of material.

Nano-layer structure of silicon-on-insulator materials

Silicon-on-insulator (SOI) has been recognized as a promising semiconductor starting material for ICs where high speed and low power consumption are desirable, in addition to its unique applications in radiation-hardened circuits. In the present paper, three novel SOI nano-layer structures have been demonstrated. ULTRA-THIN SOI has been fabricated by separation by implantation of oxygen (SIMOX) technique at low oxygen ion energy of 45 keV and implantation dosage of 1.81017/cm2. The formed SOI layer is uniform with thickness of only 60 nm. This layer is of crystalline quality. and the interface between this layer and the buried oxide layer is very sharp, PATTERNED SOI nanostructure is illustrated by source and drain on insulator (DSOI) MOSFETs. The DSOI structure has been formed by selective oxygen ion implantation in SIMOX process. With the patterned SOI technology, the floating-body effect and self-heating effect, which occur in the conventional SOI devices, are significantly suppressed. In order to improve the total-dose irradiation hardness of SOI devices, SILICON ON INSULATING MULTILAYERS (SOIM) nano-structure is proposed. The buried insulating multilayers, which are composed of SiOx and SiNy layers, have been realized by implantation of nitride and oxygen ions into silicon in turn at different ion energies, followed by two steps of high temperature annealing process, respectively, Electric property investigation shows that the hardness to the total-dose irradiation of SOIM is remarkably superior to those of the conventional SIMOX SOI and the Bond-and-Etch-Back SOI.

Edge dislocation of b=[001]/2 in the InAs nanostructure on InP(001)

The self-organized InAs/In0.52Al0.48As nanostructure were grown on InP (001) using molecular beam epitaxy (MBE). The nanostructure has been studied using transmission electron microscopy (TEM) and high resolution transmission electron microscopy (HRTEM). The edge dislocations with the Burgers vector b = ([001]/2) and extending along the [$(110) over bar $] direction are observed. The results show that in the region near an edge dislocation, no InAs wires were formed, while in the regions free of dislocation, wire-like nanostructures were formed. The mechanisms for the formation of the [001]/2 edge dislocations were discussed.

Nano-layer structure of silicon-on-insulator materials

Silicon-on-insulator (SOI) has been recognized as a promising semiconductor starting material for ICs where high speed and low power consumption are desirable, in addition to its unique applications in radiation-hardened circuits. In the present paper, three novel SOI nano-layer structures have been demonstrated. ULTRA-THIN SOI has been fabricated by separation by implantation of oxygen (SIMOX) technique at low oxygen ion energy of 45 keV and implantation dosage of 1.81017/cm2. The formed SOI layer is uniform with thickness of only 60 nm. This layer is of crystalline quality. and the interface between this layer and the buried oxide layer is very sharp, PATTERNED SOI nanostructure is illustrated by source and drain on insulator (DSOI) MOSFETs. The DSOI structure has been formed by selective oxygen ion implantation in SIMOX process. With the patterned SOI technology, the floating-body effect and self-heating effect, which occur in the conventional SOI devices, are significantly suppressed. In order to improve the total-dose irradiation hardness of SOI devices, SILICON ON INSULATING MULTILAYERS (SOIM) nano-structure is proposed. The buried insulating multilayers, which are composed of SiOx and SiNy layers, have been realized by implantation of nitride and oxygen ions into silicon in turn at different ion energies, followed by two steps of high temperature annealing process, respectively, Electric property investigation shows that the hardness to the total-dose irradiation of SOIM is remarkably superior to those of the conventional SIMOX SOI and the Bond-and-Etch-Back SOI.

Synthesis and characterization of magnetite dodecahedron nanostructure by hydrothermal method

Magnetite dodecahedral nanocrystals were fabricated using ethlenediamine tetraacetic acid (EDTA)-mediated hydrothermal route. Scanning electron microscopy images displayed that the products were almost dodecahedrons. The length of two different ribs were about 300 and 200 nm, respectively. X-ray diffraction patterns showed that the products were the cubic inverse spinel structure. Fourier transform infrared spectrum directly provided evidence of the EDTA bound to a specific surface of the precipitated magnetic nanocrystal.

Effects of Microstructural Heterogeneity on the Spallation Behavior of Materials

It is of utmost importance to understand the spallation behaviour of heterogeneous materials. In this paper, a driven nonlinear threshold model with stress fluctuation is presented to study the effects of microstructural heterogeneity on continuum damage evolution. The spallation behavior of heterogeneity material is analyzed with this model. The heterogeniety of mesoscopic units is characterized in terms of Weibull modulus m of strength distibution and stress fluctuation parameter k. At high stress, the maximum damage increases with m; while at low stress, the maximum damage decreases. In addition, for low stress, severe stress fluctuation causes higher damage; while for high stress, causes lower damage.

Fracture mechanics of piezoelectric materials

This paper presents an analysis of crack problems in homogeneous piezoelectrics or on the interfaces between two dissimilar piezoelectric materials based on the continuity of normal electric displacement and electric potential across the crack faces. The explicit analytic solutions are obtained for a single crack in an infinite piezoelectric or on the interface of piezoelectric bimaterials. For homogeneous materials it is found that the normal electric displacement D-2, induced by the crack, is constant along the crack faces which depends only on the remote applied stress fields. Within the crack slit, the perturbed electric fields induced by the crack are also constant and not affected by the applied electric displacement fields. For bimaterials, generally speaking, an interface crack exhibits oscillatory behavior and the normal electric displacement D-2 is a complex function along the crack faces. However, for bimaterials, having certain symmetry, in which an interface crack displays no oscillatory behavior, it is observed that the normal electric displacement D-2 is also constant along the crack faces and the electric field E-2 has the singularity ahead of the crack tip and has a jump across the interface. Energy release rates are established for homogeneous materials and bimaterials having certain symmetry. Both the crack front parallel to the poling axis and perpendicular to the poling axis are discussed. It is revealed that the energy release rates are always positive for stable materials and the applied electric displacements have no contribution to the energy release rates.

FEM Simulations and Optimization about Residual Stresses in Coating Structures with Functionally Graded Materials Layer

An elasto-plastic finite element method is developed to predict the residual stresses of thermal spraying coatings with functionally graded material layer. In numerical simulations, temperature sensitivity of various material constants is included and mix

Analysis of strip electric saturation model of crack problem in piezoelectric materials

This paper presents a fully anisotropic analysis of strip electric saturation model proposed by Gao et al. (1997) (Gao, H.J., Zhang, T.Y., Tong, P., 1997. Local and global energy release rates for an electrically yielded crack in a piezoelectric ceramic. J. Mech. Phys. Solids, 45, 491-510) for piezoelectric materials. The relationship between the size of the strip saturation zone ahead of a crack tip and the applied electric displacement field is established. It is revealed that the critical fracture stresses for a crack perpendicular to the poling axis is linearly decreased with the increase of the positive applied electric field and increases linearly with the increase of the negative applied electric field. For a crack parallel to the poring axis, the failure stress is not effected by the parallel applied electric field. In order to analyse the existed experimental results, the stress fields ahead of the tip of an elliptic notch in an infinite piezoelectric solid are calculated. The critical maximum stress criterion is adopted for determining the fracture stresses under different remote electric displacement fields. The present analysis indicates that the crack initiation and propagation from the tip of a sharp elliptic notch could be aided or impeded by an electric displacement field depending on the field direction. The fracture stress predicted by the present analysis is consistent with the experimental data given by Park and Sun (1995) (Park, S., Sun, C.T., 1995. Fracture criteria for piezoelectric materials. J. Am. Ceram. Soc 78, 1475-1480).

Structural and Mechanical Properties of the Organic Matrix Layers of Nacre

The type of nanostructure referred to in biomineralization as a mineral bridge has been directly observed and measured in the organic matrix layers of nacre by transmission electron microscopy and scanning electron microscopy. Statistical analysis provides the geometric characteristics and a distribution law of the mineral bridges in the organic matrix layers. Experiments reveal that the nanostructures significantly influences the mechanical properties of the organic matrix layers. In addition, the mechanical analysis illustrates the effects of the nanostructures on the behaviors of the organic matrix layers, and the analytical results explain the corresponding experimental phenomena fairly well. The present study shows that the mineral bridges play a key role in the mechanical performances of the organic matrix layers of nacre. The results obtained provide a guide to the interfacial design of synthetic materials.

3D Anisotropic Elastoplastic-Damage Model and its Application in Simulating the Behavior of Rock Materials

A 3D anisotropic elastoplastic-damage model was presented based on continuum damage mechanics theory. In this model, the tensor decomposition technique is employed. Combined with the plastic yield rule and damage evolution, the stress tensor in incremental format is obtained. The derivate eigenmodes in the proposed model are assumed to be related with the uniaxial behavior of the rock material. Each eigenmode has a corresponding damage variable due to the fact that damage is a function of the magnitude of the eigenstrain. Within an eigenmodes, different damage evolution can be used for tensile and compressive loadings. This model was also developed into finite element code in explicit format, and the code was integrated into the well-known computational environment ABAQUS using the ABAQUS/Explicit Solver. Numerical simulation of an uniaxial compressive test for a rock sample is used to examine the performance of the proposed model, and the progressive failure process of the rock sample is unveiled.