国产万亿次机群系统NPB性能测试分析

对3个国产万亿次机群系统进行了NPB性能测试分析,重点研究大规模并行处理时(处理器数目达到上千个)的性能特点和趋势.分析了不同的处理器、互连网络等系统配置对NPB性能的影响,发现NPB的8个程序在3个万亿次机器上的性能特点和表现并不一致,表明国产高性能机群在设计上正在逐渐走出同质化的趋势,向多样化发展.进一步分析表明,目前NPB程序的可扩展性可以达到几百个处理器,但尚不能达到上千个处理器,NPB程序能发挥出的系统峰值的百分比仍然徘徊在10%左右,机群系统的并行可扩展性和应用程序对机器运算潜能的利用还需要进一步提高.对于处理器数目达到上千个的万亿次机群系统来说,对集合通信和细粒度通信能力的支持亟需提高.

OLED中空穴传输层NPB薄膜的结晶化行为研究

近年来，虽然有机电致发光材料和有机电致发光器件得到了广泛的研究，然而贯穿整个有机电致发光研究主线的稳定性问题仍是一个重要的议题。作为发光器件的主要组成部分，有机小分子薄膜的性能不仅由组成分子结构决定，而且还受到自身形态结构的制约。要解决有机材料的热稳定性问题，材料薄膜的形态结构是一个重要的影响因素。弄清有机小分子薄膜的形态结构和性能间的相互关系对于进一步提高器件性能（效率和寿命）是十分必要的。有机分子的热不稳定性表现在形态结构上主要是由非晶态到结晶态的转变，从而引起器件性能的不稳定。所以本文详细研究了一种典型的半晶性有机分子薄膜（同时也是最经常使用的有机小分子空穴传输材料之一）-NPB薄膜的结晶化相转变，分别从均相成核结晶化相转变和异相成核结晶化相转变两个角度来阐述。本文通过AFM、PLM、X射线衍射、DSC等实验方法和研究手段表征了NPB薄膜由非晶态到结晶态的相态转化，并从热力学上进行了分析。同时结合了实际OLED器件中的应用。本论文研究表明NPB分子是一种典型的半晶性小分子，非晶与结晶两种状态的并存导致热力学上的不稳定。本论文详细研究了NPB薄膜的均相成核结晶化相转变和异相成核结晶化相转变，并指出半晶性的NPB分子薄膜的均相成核结晶化存在一个临界结晶厚度，当薄膜厚度超过临界结晶厚度时才能发生结晶。并且临界结晶厚度的大小与基底温度有关。而NPB薄膜的异相成核结晶化转变则由于异核的引入结晶能的降低相对来说容易许多。本论文首次从理论角度归纳提出了均相成核结晶老化机制和异相成核结晶老化机制两种关系到OLED器件稳定性（老化问题）的机制。是为数不多的从薄膜形态角度来研究器件稳定性的一篇文章，对从材料化学角度深入理解OLED器件稳定性有着重要的意义。

Ambipolar permeable metal-base transistor based on NPB/C-60 heterojunction

In this paper, we report the fabrication of permeable metal-base organic transistors based on N,N'-diphenyl-N,N'-bis(1-naphthylphenyl)-1,1'-biphenyl-4,4'-diamine (NPB)/C-60 heterojunction as both emitter and collector. By applying different polarities of voltage bias to the collector and the base, and input current to the emitter, the ambipolar behavior can be observed. The device demonstrates excellent common-base characteristics both in P-type and N-type modes with common-base current gains of 0.998 and 0.999, respectively.

Investigation of charge-carrier injection characteristics in NPB/Alq3 heterojunction devices

The effect of copper phthalocyanine (CuPc) and LiF interfacial layers on the charge-carrier injection in NN'-di(naphthalene-l-yl)N,N'-diphenyl-benzidine (NPB)/tris(8-hydroxyquinoline) aluminium (Alq(3)) organic heterojunction devices have been studied through the analysis of current-voltage characteristics. The investigation clearly demonstrated that the hole injection into NPB from anode is Fowler-Nordheim (FN) tunneling and the electron injection into Alq3 from cathode is Richardson-Schottky (RS) thermionic emission. The barrier heights obtained from the FN and RS models proved that the band alignments for charge-carrier injection are greatly improved by the CuPc and LiF interfacial layers, which should fully clarify the role of the interfacial layer on the improvement of device performance.

The performance enhancement in organic light-emitting diode using a semicrystalline composite for hole injection

A semicrystalline composite, 3, 4, 9, 10 perylenetetracarboxylic dianhydride (PTCDA) doped N,N'-di(1-naphthyl)-N,N'-diphenylbenzidine (NPB), has been fabricated and characterized. An organic light-emitting diode using such a composite in hole injection exhibits the improved performance as compared with the reference device using neat NPB in hole injection. For example, at a luminance of 2000 cd/m(2), the former device gives a current efficiency of 2.0cd/A, higher than 1.6cd/A obtained from the latter device. Furthermore, the semicrystalline composite has been shown thermally to be more stable than the neat NPB thin film, which is useful for making organic light emitting diodes with a prolonged lifetime.

Organic light-emitting diodes with magnesium doped CuPc as an efficient electron injection layer

Bright organic electroluminescent devices are developed using a metal-doped organic layer intervening between the cathode and the emitting layer. The typical device structure is a glass substrate/indium-tin oxide (ITO)/copper phthalocyanine (CuPc)/NN'-bis-(1-naphthl)-diphenyl-1,1'-biphenyl-4,4'-diamine (NPB)/Tris(8-quinolinolato) aluminum(Alq(3))/Mg-doped CuPc/Ag. At a driving voltage of 11 V, the device with a layer of Mg-doped CuPc (1:2 in weight) shows a brightness of 4312 cd/m(2) and a current efficiency of 2.52 cd/A, while the reference device exhibits 514 cd/m(2) and 1.25 cd/A.

Highly efficient and stable organic light-emitting diodes employing MoO3-doped perylene-3, 4, 9, 10-tetracarboxylic dianhydride as hole injection layer

We report highly efficient and stable organic light-emitting diodes (OLEDs) with MoO3-doped perylene-3, 4, 9, 10-tetracarboxylic dianhydride (PTCDA) as hole injection layer (HIL). A green OLED with structure of ITO/20 wt% MoO3: PTCDA/NPB/Alq(3)/LiF/Al shows a long lifetime of 1012 h at the initial luminance of 2000 cd/m(2), which is 1.3 times more stable than that of the device with MoO3 as HIL. The current efficiency of 4.7 cd/A and power efficiency of 3.7 lm/W at about 100 cd/m(2) have been obtained. The charge transfer complex between PTCDA and MoO3 plays a decisive role in improving the performance of OLEDs.

Tandem organic light-emitting diodes with an effective charge-generation connection structure

The tandem organic light-emitting diodes (OLEDs) with an effective charge-generation connection structure of Mg-doped tris(8-hydroxyquinoline) aluminum (Alq(3))/Molybdenum oxide (MoO3)-doped 3, 4, 9, 10-perylenetetracarboxylic dianhydride (PTCDA) were presented. At a current density of 50 mA/cm(2), the current efficiency of the tandem OLED with two standard NPB/Alq(3) emitting units is 4.2 cd/A, which is 1.7 times greater than that of the single EL device. The tandem OLED with the similar connection structure of Mg-doped PTCDA/MoO3-doped PTCDA was also fabricated and the influences of the different connection units on the current efficiency of the tandem OLED were discussed as well.

集群网络评测模型的新探索

传统集群网络(cluster area network,简称cLAN)的评测模型主要考虑了延迟、带宽、路由、拥塞、网络拓扑结构等因素.但这些因素是否足以描述实际应用程序在集群上的通信行为,或者对其在集群系统上的性能给出一个很好的预测呢?当对NAS Parallel Benchmark(2.4版本)在集群系统深腾1800(DeepComp 1800)上进行大量测试时发现,集群网络的通信性能可以被一种特殊的通信模式(LU模式)所严重影响.更深入的研究表明,这个影响LU模式的因素是独立于前面所述的如延迟、带宽、路由、拥塞、网络拓扑结构等因素的.因此有必要对集群网络的评测模型重新进行审视,并增加一个新的性能评测因子以反映这个新发现的现象.从研究结果来看,这个重新审视也将对集群系统上的并行算法设计以及实际大规模科学计算的应用程序性能的优化提供一些新的思路.

有机薄膜的形态结构和性能关系的研究

随着人类社会的进步和信息技术使用的广泛普及，客观上提出了对更新、更廉价的信息显示屏的需求。有机材料由于具有较高的荧光效率和较宽的发光谱带，已经被视为下一代显示材料的有利竞争者。有机／高分子材料、光化学／光物理、薄膜技术以及电子工程的近期发展已经实现了基于有机电致发光材料的大面积、高性能和全色平板显示器。有机电致发光显示器不但具有高效、高速、高对比度和低成本等优点，而且由于其在柔性和透明方面的潜在优势更加激发了全世界众多科研机构和工业界的兴趣。虽然有机电致发光材料和有机电致发光器件得到了广泛研究，但是有关有机薄膜的形态结构和性能间关系的研究却少有报道。众所周知，有机电致发光材料是以薄膜的形式存在于电致发光器件中，因此，有机薄膜的形态结构必然对器件性能产生重大的影响。本文以三种典型的电致发光材料：Alq3（发光材料）、NPB（空穴传输材料）、PBD（电子传输材料）为研究对象，详细研究了薄膜制备过程中基底温度和基底性质对有机薄膜形态结构的影响。在低基底温度（77K）条件下，薄膜的生长方式取决于分子构型；当基底温度高于室温时，薄膜的生长方式决定于分子在基底上的热活动能力（取决于基底温度）和分子对基底的浸润性（取决基底性质）。本文首次证实了高基底温度下NPB薄膜的不结晶生长，阐述了有机薄膜生长过程的本质；首次测定了PBD样品的玻璃化相转变湿度，揭示了有机材料的本体相行为和薄膜相行为间的内在关系。首次报道了Alq3薄膜的形态结构对发光器件性能的影响，结果指出，与室温制备的Alq3薄膜相比，高温制备的Alq3薄膜具有较高的量子效率；研究了NPB薄膜的形态结构对发光器件性能的影响，结果指出，虽然均匀无定型的玻璃态，但由于低基底温度制备的NPB薄膜中分子间作用力强于室温制备的薄膜，空穴迁移率得到增强，因此提出了一个提高电致发光器件性能的新方法：薄膜凝聚态的调控。

电致发光金属配合物和有机小分子的合成与性能

本文以调控发光颜色、提高发光效率为目的，通过改变配体、中心金属离子、取代基等进行颜色调节；通过引入电子或空穴传输单元，实现发光分子的功能化进而改善载流子传输提高发光效率。文中主要以有机小分子和金属配合物为研究对象，它们本身都具有良好的发光性质。工作集中围绕以下几个问题展开：1、PPV齐聚物是一类高效发光的分子体系，如果在其中嵌入8一取代的哇琳单元对发光会有什么影响？2、使用含噁二唑（具有电子传输功能）的配体得到的金属配合物是否能同时拥有双重功能，即高效发光（金属配合物的特点）和优良的电子传输？3、由N2O-双齿配体转变成N，N-双齿配体，配合物的发光又会如何？4、稀土配合物具有高的光致发光效率，但电致发光效率非常低，能否通过咔哇或呛二吟功能化来改善载流子传输，提高电致发光效率？主要工作及取得的结果概述如下：1、经由Knoevenagel缩合反应合成了一系列共骊的2，21-（1，4-芳二乙烯基）双-8-取代喹啉。单晶X-射线衍射研究表明固态下存在分子间，π…π堆积相互作用，这对于载流子传输是比较有利的。喹啉8-位于的取代基的变化对发光影响不大，表明刚性共扼骨架对发光起主要贡献。改变中心的芳核，明显可以调控发光颜色。当存在分子内电荷转移时，与不存在的相比，发光显著红移。电致发光性质表明这些含双喳琳的PPV齐聚物是良好的发光和电子传输材料。2、存在分子内氢键的化合物2-（2-羟基苯基）-5-苯基-1，3，4-噁二唑（HOXD），具有激发态分子内质子转移（ESIPT）特性。在室温下，用365脚的紫外灯照射时表现强的兰色荧光。室温和低温（77K）下的磷光光谱表明它在固态下具有较强的磷光发射，与理论预测完全一致。多层电致发光器件ITO加PB／HOXD／BCP／Alq3／Mg：Ag最大亮度达到656cd／m2，电流效率为0．37cd／A。当把HoxD掺在cBP中时，亮度和效率都有一定程度的提高，达到870cd／m2和0.82cd／A。3、合成了含有德二哩配体（HOXD）的碱金属配合物MOxD（M=Li，Na，K）。我们发现配合物的发光颜色取决于中心金属离子，LiOXD是一个优良的蓝光材料，半峰宽是65nm，发射峰位在478nm，它也可以作为界面材料使用，起到和LIF相同的作用，即改善电子注入。同时作者首次报道了钠和钾的配合物可以用作发光材料。电致发光性质表明这些配合物是优良的蓝／绿色发光和电子注入／传输材料。4、使用从N双齿配体代替N，O-双齿配体（比如8-羟基喹啉），合成了含有2－（2-羟基喹啉）苯并咪唑的锌、铍和硼配合物。用硼配合物作为发光层的三层器件ITO/NPB/boron-complex／Alq3／LiF／A1所得到的光谱覆盖了从400到750nm的区域，表明获得了一个很好的白色发光。白光分别源于激子和激基复合物发光，由三种成分构成：来自于硼配合物的兰色发光（490nm）；来自于Alq3的发光（535nln）；NPB和BPh2（Pybm）界面形成的激基复合物发光（610nm）。器件最大亮度是110cd／m2最大效率是0.8cd／A。5、设计、合成了咔唑、噁二唑功能化的稀土馆配合物，期望通过改善空穴和电子传输来提高发光效率。含咔哇的配合物的双层器件发光光谱较宽，包括三价铺的特征发射和一个宽峰，可能是咔唑的发光。当使用TPD做空穴传输层时，噁二唑铺配合物的电致发光器件得到纯正明亮的红色发光，器件结构为ITO／TPD（40nm）／（OXD-PyBM）Eu（DBM）3（SOnm）／LiF（Inm）／Al（200m），启动电压为7.8V，在21v时达到最大亮度322cd／m2。亮度为57cd／m2和13．sv时电流效率最大，为1.9cd／A，对应外量子效率是1.7％。高的效率表明通过引入噁二唑基团，配合物的电子传输能力得到明显改善。6、初步研究了三线态发光的铱的金属有机配合物，得到了高亮度、高效率的绿色发光；对8-羟基喹啉锌配合物的高分子化也做了初步探讨。

The role of molybdenum oxide as anode interfacial modification in the improvement of efficiency and stability in organic light-emitting diodes

It has been experimentally found that molybdenum oxide (MoO3) as the interfacial modification layer on indium-tin-oxide (ITO) in organic light-emitting diodes (OLEDs) significantly improves the efficiency and lifetime. In this paper, the role of MoO3 and MoO3 doped N,N '-di(naphthalene-1-yl)-N,N '-diphenyl-benzidine (NPB) as the interface modification layer on ITO in improvement of the efficiency and stability of OLEDs is investigated in detail by atomic force microscopy (AFM), polarized optical microscopy, transmission spectra, ultraviolet photoemission spectroscopy (UPS) and X-ray photoemission spectroscopy (XPS).

Efficient white organic light-emitting diodes using europium complex as the red unit

Efficient white organic light-emitting diodes (WOLEDs) using europium complex as the red unit are presented. The WOLEDs were fabricated by using the structure of indium tin oxide (ITO)/N, N'-di(naphthalene-1-yl)-N, N'-diphenyl-benzidine (NPB)/4,4-N, N-dicarbazolebiphenyl (CBP) : bis(2,4-diphenylquinolyl-N, C-2) iridium (acetylacetonate) ((PPQ)(2)Ir(acac)) : Eu (III) tris(thenoyltrifluoroacetone) 3,4,7,8-tetramethyl-1,10-phenanthroline (Eu(TTA)(3)(Tmphen))/NPB/2-methyl-9,10-di(2-naphthyl)anthracene (MADN) : p-bis (p-N, N-di-phenyl-aminostyryl)benzene (DSA-Ph)/9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP)/tris(8-hydroxyquinoline) aluminium (Alq3)/LiF/Al.

Al/WO3/Au as the interconnecting layer for efficient tandem white organic light-emitting diodes

White light emission from tandem organic light-emitting diodes consisting of blue and red light units separated by a transparent interconnecting layer of Al/WO3/Au has been realized. The devices have a structure of indium-tin-oxide (ITO)/molybdenum oxide (MoO3) (8 nm)/N, N'-di(naphthalene-1-yl)-N, N'-diphenyl-benzidine (NPB)(100 nm)/p-bis(p-N, N-diphenyl-aminostyryl) benzene) (DSA-ph): 2-methyl-9,10-di(2-naphthyl) anthracene (MADN)(40 nm)/tris(8-hydroxylquinoline) aluminium (Alq(3)) (10 nm)/LiF(1 nm)/Al(2 nm)/WO3(3 nm)/Au(16 nm)/MoO3(5 nm)/NPB(60 nm)/Alq(3): 4-(dicyanomethylene)-2-t-butyl-6-(1,1,7,7-tetramethyljulolidyl-9-enyl)-4H-pyran (DCJTB)(30 nm)/Alq3(30 nm)/LiF(1 nm)/Al(150 nm).

Hybrid permeable metal-base transistor with large common-emitter current gain and low operational voltage

We demonstrate the suitability of N,N'-diphenyl-N,N'-bis(1-naphthylphenyl)-1,1'-biphenyl-4,4'-diamine (NPB), an organic semiconductor widely used in organic light-emitting diodes (OLEDs), for high-gain, low operational voltage nanostructured vertical-architecture transistors, which operate as permeable-base transistors. By introducing vanadium oxide (V2O5) between the injecting metal and NPB layer at the transistor emitter, we reduced the emitter operational voltage.