Direct numerical test of the B-G-K model equation by the DSMC method

In the present paper the rarefied gas how caused by the sudden change of the wall temperature and the Rayleigh problem are simulated by the DSMC method which has been validated by experiments both in global flour field and velocity distribution function level. The comparison of the simulated results with the accurate numerical solutions of the B-G-K model equation shows that near equilibrium the BG-K equation with corrected collision frequency can give accurate result but as farther away from equilibrium the B-G-K equation is not accurate. This is for the first time that the error caused by the B-G-K model equation has been revealed.

用自相关法确定VITA法的门限K

研究了用ＶＩＴＡ条件采样方法壁湍猝发的门限值与壁湍流猝发平均周期之间的关系，根据用壁湍流流向脉动速度自相关函数检测得到的壁湍流猝发平均周期，确定壁，湍猝发ＶＩＴＡ条件采样的门限值Ｋ。

Asymptotic analysis based on K-S constitutive law for a rubber wedge compressed by a line load at its tip

In the present paper, a rubber wedge compressed by a line load at its tip is asymptotically analyzed using a special constitutive law proposed by Knowles and Sternberg (K-S elastic law) [J. Elasticity 3 (1973) 67]. The method of dividing sectors proposed by Gao [Theoret. Appl. Fract, Mech. 14 (1990) 219] is used. Domain near the wedge tip can be divided into one expanding sector and two narrowing sectors. Asymptotic equations of the strain-stress field near the wedge tip are derived and solved numerically. The deformation pattern near a wedge tip is completely revealed. A special case. i.e. a half space compressed by a line load is solved while the wedge angle is pi.

Properties of high k gate dielectric gadolinium oxide deposited on Si(100) by dual ion beam deposition (DIBD)

Gadolinium oxide thin films have been prepared on silicon (100) substrates with a low-energy dual ion-beam epitaxial technique. Substrate temperature was an important factor to affect the crystal structures and textures in an ion energy range of 100-500 eV. The films had a monoclinic Gd2O3 structure with preferred orientation ((4) over bar 02) at low substrate temperatures. When the substrate temperature was increased, the orientation turned to (202), and finally, the cubic structure appeared at the substrate temperature of 700 degreesC, which disagreed with the previous report because of the ion energy. The AES studies found that Gadolinium oxide shared Gd2O3 structures, although there were a lot of oxygen deficiencies in the films, and the XPS results confirmed this. AFM was also used to investigate the surface images of the samples. Finally, the electrical properties were presented. (C) 2004 Elsevier B.V. All rights reserved.

Starting Nozzle Flow Simulation Using K-G Two-Equation Turbulence Model

The starting process of two-dimensional nozzle flows has been simulated with Euler, laminar and k - g two-equation turbulence Navier-Stokes equations. The flow solver is based on a combination of LUSGS subiteration implicit method and five spatial discretized schemes, which are Roe, HLLE, MHLLE upwind schemes and AUSM+, AUSMPW schemes. In the paper, special attention is for the flow differences of the nozzle starting process obtained from different governing equations and different schemes. Two nozzle flows, previously investigated experimentally and numerically by other researchers, are chosen as our examples. The calculated results indicate the carbuncle phenomenon and unphysical oscillations appear more or less near a wall or behind strong shock wave except using HLLE scheme, and these unphysical phenomena become more seriously with the increase of Mach number. Comparing the turbulence calculation, inviscid solution cannot simulate the wall flow separation and the laminar solution shows some different flow characteristics in the regions of flow separation and near wall.

等离子体效应对类氦氖Kα线系电偶极辐射的影响

采用离子球模型，通过自洽求解Boltzmann方程和Poisson方程，得到类氦氖离子Kα线系的两条电偶极辐射光谱能量随等离子体环境的漂移．结果显示，Kα线系电偶极谱线随等离子体电子密度增大发生红移，红移量与等离子体电子密度有近似的正比关系；随着等离子体电子温度的降低，光谱红移对等离子体电子密度的敏感性增大。另外，所研究的两条谱线间的能量间隔随等离子体电子密度的增大而减小，减小量随等离子体电子密度的变化也呈现出近似的线性规律。值得注意的是，类氦氖Kα线系中两条电偶极谱线分别为互组合线与共振谱线，而其能量差

Controlling the group velocity in a five-level K-type atomic system

The properties of a five-level K-type system are investigated. With the controlling fields, the properties of the dispersion and absorption of the system are changed greatly. The system can produce anomalous dispersion regions with absorption and normal dispersion regions with absorption or transparency. Furthermore, the group velocity can be varied from subluminal to superluminal by varying the intensity of the controlling field and the probe detunings in principle. (C) 2008 Elsevier B.V. All rights reserved.

Anomalous scattering factor determined by semicircle fitting near the K-absorption edge of Ge

It is shown that the locus of the f' + if '' plot in the complex plane, f' being determined from measured f '' by using the dispersion relation, looks like a semicircle very near the absorption edge of Ge. The semicircular locus is derived from a quantum theory of X-ray resonant scattering when there is a sharp isolated peak in f '' just above the K-absorption edge. Using the semicircular behavior, an approach is proposed to determine the anomalous scattering factors in a crystal by fitting known calculated values based on an isolated-atom model to a semicircular focus. The determined anomalous scattering factors f' show excellent agreement with the measured values just below the absorption edge. In addition, the phase determination of a crystal structure factor has been considered by using the semicircular behavior.