Silicon-on-insulating multi-layers for total-dose irradiation hardness

Silicon-on-insulating multi-layer (SOIM) materials were fabricated by co-implantation of oxygen and nitrogen ions with different energies and doses. The multilayer microstructure was investigated by cross-sectional transmission electron microscopy. P-channel metal-oxide-semiconductor (PMOS) transistors and metal-semiconductor-insulator-semiconductor (MSIS) capacitors were produced by these materials. After the irradiated total dose reaches 3 x 10(5) rad (Si), the threshold voltage of the SOIM-based PMOS transistor only shifts 0.07 V, while thin silicon-on-insulating buried-oxide SIMOX-based PMOS transistors have a shift of 1.2V, where SIMOX represents the separated by implanted oxygen. The difference of capacitance of the SOIM-based MSIS capacitors before and after irradiation is less than that of the thin-box SIMOX-based MSIS capacitor. The results suggest that the SOIM materials have a more remarkable irradiation tolerance of total dose effect, compared to the thin-buried-oxide SIMOX materials.

Formation of total-dose-radiation hardened materials by sequential oxygen and nitrogen implantation and multi-step annealing

Separation by implantation of oxygen and nitrogen (SIMON) silicon-on-insulator (SOI) materials were fabricated by sequential oxygen and nitrogen implantation with annealing after each implantation. Analyses of SIMS, XTEM and HRTEM were performed. The results show that superior buried insulating multi-layers were well formed and the possible mechanism is discussed. The remarkable total-dose irradiation tolerance of SIMON materials was confirmed by few shifts of drain leakage current-gate source voltage (I-V) curves of PMOS transistors fabricated on SIMON materials before and after irradiation.

Parameters Inversion of Fluid-Saturated Porous Media Based on Neural Networks

The multi-layers feedforward neural network is used for inversion of material constants of fluid-saturated porous media. The direct analysis of fluid-saturated porous media is carried out with the boundary element method. The dynamic displacement responses obtained from direct analysis for prescribed material parameters constitute the sample sets training neural network. By virtue of the effective L-M training algorithm and the Tikhonov regularization method as well as the GCV method for an appropriate selection of regularization parameter, the inverse mapping from dynamic displacement responses to material constants is performed. Numerical examples demonstrate the validity of the neural network method.

A load simulation method of piezoelectric actuator in FEM for smart structures

More and more piezoelectric materials and structures have been used for structure control in aviation and aerospace industry. More efficient and convenient computation method for large complex structure with piezoelectric actuation devices is required. A load simulation method of piezoelectric actuation is presented in this paper. By this method, the freedom degree of finite element simulation is significantly reduced, the difficulty in defining in-plane voltage for multi-layers piezoelectric composite is overcome and the transfer computation between material main direction and the element main direction is simplified. The concept of simulation load is comprehensible and suitable for engineers of structure strength in shape and vibration control, thereby is valuable for promoting the application of piezoelectric material and structures in practical aviation and aerospace fields.

Effects of polarization field on formation of two-dimensional electron gas in (0001) and (11(2)over-bar0) plane AlGaN/GaN heterostructures

Photoluminescence (PL) and temperature-dependent Hall effect measurements were carried out in (0001) and (11 (2) over bar0) AlGaN/GaN heterostructures grown on sapphire substrates by metalorganic chemical vapor deposition. There are strong spontaneous and piezoelectric electric fields (SPF) along the growth orientation of the (0001) AlGaN/GaN heterostructures. At the same time there are no corresponding SPF along that of the (1120) AlGaN/GaN. A strong PL peak related to the recombination between two-dimensional electron gas (2DEG) and photoexcited holes was observed at 3.258 eV at room temperature in (0001) AlGaN/GaN heterointerfaces while no corresponding PL peak was observed in (11 (2) over bar0). The existence of a 2DEG was observed in (0001) AlGaN/GaN multi-layers with a mobility saturated at 6000 cm(2)/V s below 80 K, whereas a much lower mobility was measured in (11 (2) over bar0). These results indicated that the SPF was the main element to cause the high mobility and high sheet-electron-density 2DEG in AlGaN/GaN heterostructures. (C) 2004 Elsevier B.V. All rights reserved.

Characterization of GaSb substrate wafers for MOCVD III-V antimonides

The qualities of GaSb substrates commonly used for the preparation of III-V antimonide epilayers were studied before and after growing GaInAsSb multi-layers by MOCVD using PL, FTIR and DCXD together with the electrical properties and EPD value. The correlation between the substrate qualities and epilayer properties was briefly discussed. The good property epilayers of GaInAsSb and, then, the high preformance of 2.3 um photodetectors were achieved only using the good quality GaSb wafers as the substrates.

Effects of polarization field on formation of two-dimensional electron gas in (0001) and (11(2)over-bar0) plane AlGaN/GaN heterostructures

Photoluminescence (PL) and temperature-dependent Hall effect measurements were carried out in (0001) and (11 (2) over bar0) AlGaN/GaN heterostructures grown on sapphire substrates by metalorganic chemical vapor deposition. There are strong spontaneous and piezoelectric electric fields (SPF) along the growth orientation of the (0001) AlGaN/GaN heterostructures. At the same time there are no corresponding SPF along that of the (1120) AlGaN/GaN. A strong PL peak related to the recombination between two-dimensional electron gas (2DEG) and photoexcited holes was observed at 3.258 eV at room temperature in (0001) AlGaN/GaN heterointerfaces while no corresponding PL peak was observed in (11 (2) over bar0). The existence of a 2DEG was observed in (0001) AlGaN/GaN multi-layers with a mobility saturated at 6000 cm(2)/V s below 80 K, whereas a much lower mobility was measured in (11 (2) over bar0). These results indicated that the SPF was the main element to cause the high mobility and high sheet-electron-density 2DEG in AlGaN/GaN heterostructures. (C) 2004 Elsevier B.V. All rights reserved.

Characterization of GaSb substrate wafers for MOCVD III-V antimonides

The qualities of GaSb substrates commonly used for the preparation of III-V antimonide epilayers were studied before and after growing GaInAsSb multi-layers by MOCVD using PL, FTIR and DCXD together with the electrical properties and EPD value. The correlation between the substrate qualities and epilayer properties was briefly discussed. The good property epilayers of GaInAsSb and, then, the high preformance of 2.3 um photodetectors were achieved only using the good quality GaSb wafers as the substrates.

吐合盆地鲁克沁构造带断块油藏形成机制及油藏预测

Lukeqin arc belt is a compound structure generated by multi-movements and composed of 6 sub-structural zones, which are connected by Huoyanshan Mountain. General characteristics of the arc belt are multi-patterns of structure, multi-phases for petroleum, multi-types of trap and multi-layers for reservoirs. As a part of the eastern Lukeqin arc belt located on the south of Taibei depression, Lukeqin structural zone behaves as a complex faulted-fold zone, in which the formation and distribution of hydrocarbons are controlled by structures. As the dominant source of dynamics for the second migration of hydrocarbon, structure stress field is closely related with the potentials of hydrodynamics. Results derived from the simulations of stress field by finite element method indicate that the northwest tending faults prefer seal to the northeast tending ones. The reason is that the northwest tending faults were squeezed more strongly than the northeast tending ones. Therefor, the northeast tending faults become always the paths for oil to migrate southeastward. Lukeqin structural zone is the main site for oil to concentration because it is surrounded by high stress. Situated on the front of the foreland basin of Turpan-Hami, Lukeqing arc belt is a dam to hold back the southward migrating oil from Shengbei depression. The axis line of Shenquan-Shengnan-Yanmuxi, Lukeqin and Yubei controls the migrating paths and concentrating process of oil and gas. Results derived from stress simulation and structure analyses indicate consistently that both Yubei and Lukeqin structural zones are the favorite areas for oil to migrate. The generally southward paths for oil to migrate out of Taibei depression can be two ways. One of them is from Taibei depression to Yubei structural zone and the other is from Taibei depression to Lukeqin structural zone. By the both ways, oil migrated upward along the faults and southeastward along the structural axis to concentrate in either Permian or Triassic system. The newly ascertained path for oil migration, which is accurately southeastward instead of coarsely southward, indicates the directions for further explorations on the compound Lukeqin block zone. Five kinds of seal models of fault are all found in Lukeqin block zone by studying the seal features of faults occurred in the zone. Having studied the fault seal and their controlling factors by fuzzy set method, the paper deems that the northwest tended faults are better than the northeast tended ones for oil to concentrate. The most important factors to decide the seal extent of faults in this zone are the characteristics of main stress and fluids instead of capillary pressure differences between the two sides of fault and smear mud factors. There exist seal differences not only between the faults of different time but also between the sections within a fault due to the variation of depths, strata and positions. The general distribution rules of reservoirs were dominated by the seal characteristics of a fault during the time reservoirs formed. While the current features of fault seal decide the conservation of reservoirs and heights of oil accumulations. Seal or not of a fault is not absolute because the essential for fault to seal is the distribution of permeability of fault zone. Therefor, the multi cyclical activities of faults create the space-time variation of seal features of the fault. Totally, the seal extent of the faults within the area is not as perfect as to accumulate ordinary crude. Crude oil can only be sealed when it becomes viscous. Process for crude oil to become viscous and viscous happened strongly because of the fault-fold movements. Shallowly burying and even revealing of the objective layers of the reservoirs made the crude oil to be thickened by water washing biologically degradation and oxidation degradation. The northwestward deepening during or after the reservoir formation of the structural zone provided the power for oil to migrate one or more times. The main reason for oil accumulation is the formation of Lukeqin block zone during Xishanyao stage, middle Jurassic Period, Early Yanshanian Movement. While the main reason for reservoir conservation is the placidity of Triassic blocks after the formation of reservoirs. Contrasting to former opinions, it is concluded that the reservoirs in Lukeqin zone, including viscous reservoirs, were formed by one time but not more times. So the author proposes the opinion that the reservoirs of viscous oil were formed by viscous oil migration under the conditions of aptitude sets of fault seals controlled by fluid and other factors. To grope the distribution rules outside Taibei depression and discuss the formation mechanism of Anjurassic reservoirs, it is necessary to study the dominate factors for the formation of reservoirs in Lukeqin structural zone such as structural stress, fault seals and thickening mechanism of crude oil. Also, the necessary studies are the key to break through the Taibei depression and Anjurassic systems. Therefor, they are significant for the future exploration and reserve increasing of hydrocarbon within the Turpan-Hami basin. The paper studied the distribution rules of block reservoirs and forecasted the favorable zones for further exploration in Turpan-Hami basin. Conclusions can be useful for not only the exploration in the area but also the theory consult in the adjacent areas.

Extended self-similar scaling law of multi-scale eddy structure in wall turbulence

The longitudinal fluctuating velocity of a turbulent boundary layer was measured in a water channel at a moderate Reynolds number. The extended self-similar scaling law of structure function proposed by Benzi was verified. The longitudinal fluctuating velocity, in the turbulent boundary layer was decomposed into many multi-scale eddy structures by wavelet transform. The extended self-similar scaling law of structure function for each scale eddy velocity was investigated. The conclusions are I) The statistical properties of turbulence could be self-similar not only at high Reynolds number, but also at moderate and low Reynolds number, and they could be characterized by the same set of scaling exponents xi (1)(n) = n/3 and xi (2)(n) = n/3 of the fully developed regime. 2) The range of scales where the extended self-similarity valid is much larger than the inertial range and extends far deep into the dissipation range,vith the same set of scaling exponents. 3) The extended selfsimilarity is applicable not only for homogeneous turbulence, but also for shear turbulence such as turbulent boundary layers.

A mini-staged multi-stacked quantum cascade laser for improved optical and thermal performance

In this paper, a mini-staged multi-stacked quantum cascade laser structure with a designed wavelength of 4.7 mu m is presented. By introducing five 0.5 mu m thick high thermal conductivity InP interbuffer layers, the 60-stages active region core of the quantum cascade laser is divided into six equal parts. Based on simulation, this kind of quantum cascade laser with a 10 mu m ridge width gives nearly circular two-dimensional far-field distribution (FWHM = 32.8 degrees x 29 degrees) and good beam quality parameters M-2 = 1.32 x 1.31 in the fast axis (growth direction) and the slow axis (lateral direction). Due to the enhancement of lateral heat extraction through the interbuffer layers, compared to the conventional structure, a decrease of about 5-6% for the maximum temperature in the active region core of the mini-staged multi-stacked quantum cascade laser with indium-surrounded and gold-electroplated packaging profiles is obtained at all possible dissipated electrical power levels.

Mode Analysis for Equilateral-Triangle-Resonator Microlasers with Metal Confinement Layers

Mode characteristics are analyzed for electrically injected equilateral-triangle-resonator (ETR) semiconductor microlasers, which are laterally confined by insulating barrier SiO2 and electrode metals Ti-Au. For the ETR without metal layers, the totally confined mode field patterns are derived based on the reflection phase shifts, and the Q-factors are calculated from the far-field emission of the analytical near field distribution, which are agreement very well with the numerical results of the finite-difference time-domain (FDTD) simulation. The polarization dependence reflections for light rays incident on semiconductor-SiO2 -Ti-Au multi-layer structures are accounted in considering the confinement of TE and TM modes in the ETR with the metal layers. The reflectivity will greatly reduce with a Ti layer between SiO2 and Au for light rays with incident angle less than 30 especially for the TE mode, even the thickness of the Ti layer is only 10 nm. If the ETR is laterally confined by SiO2-Au layers without the Ti layer, the Fabry-Perot type modes with an incident angle of zero on one side of the ETR can also have high Q-factor. The FDTD simulation for the ETR confined by metal layers verifies the above analysis based on multi-layer reflections. The output spectra with mode intervals of whispering-gallery modes and Fabry-Perot type modes are observed from different ETR lasers with side length of 10 m, respectively.

Luminescence properties of multi-layer InGaN quantum dots grown on C- and R-plane sapphire substrates

In this study, we report comparative luminescence properties of multi-layer InGaN quantum dots grown on C- and R-plane sapphire substrates by metal organic chemical vapor deposition (MOCVD). High-density InGaN quantum dots (QDs) are formed on GaN templates by decreasing the growth temperature and increasing the adatom hopping-barrier through surface passivation. Atomic force microscopy (AFM) has been employed to estimate the size and height of these dots. Photoluminescence (PL) spectra recorded from (1120) InGaN QDs/(1102) sapphire show much stronger emission intensity compared to spectra recorded from (0001) InGaN QDs/(0001) sapphire. Due to the absence of strong spontaneous polarization and piezoelectric field, such (1150) InGaN QDs in the active layers would lead to high efficiency light emitting devices. (c) 2005 Elsevier B.V. All rights reserved.

A novel 1.3-mu m high T-0 AlGaInAs/InP strained-compensated multi-quantum well complex-coupled distributed feedback laser diode

A 1.3-mu m AlGaInAs/InP buried heterostructure (BH) stripe distributed feedback laser with a novel AlInAs/InP complex-coupled grating grown by low-pressure metalorganic chemical vapor deposition (LP-MOCVD) is proposed and demonstrated. A high characteristic temperature (T-0 = 90K between 20-80 degrees C) and temperature-insensitive slope efficiency (0.25 dB drop from 20 to 80 degrees C) in 1.3 mu m AlGaInAs/InP DFB lasers was obtained by introducing AI(Ga)InAs graded-index separate-confinement heterostructure (GRINSCH) layers and a strained-compensated (SC) multi-quantum well (MQW).