A narrow photoluminescence linewidth of 19.2 meV at 1.35 mu m from In0.5Ga0.5As/GaAs quantum island structure grown by molecular beam epitaxy

A self-organized In0.5Ga0.5As/GaAs quantum island structure emitting at 1.35 mum at room temperature has been successfully fabricated by molecular beam epitaxy via cycled (InAs)(1)/GaAs)(1)monolayer deposition method. The photoluminescence measurement shows that a very narrow linewidth of 19.2 meV at 300 K has been reached for the first time, indicating effective suppression of inhomogeneous broadening of optical emission from the In0.5Ga0.5As island structure due to indium segregation reduction by introducing an AlAs layer and the strain reduction by inserting an In0.2Ga0.8As layer overgrown on the top of islands. The mound-like morphology of the islands elongated along the [1 (1) over bar0] azimuth are observed by the atomic force microscopy measurement, which reveals the fact that strain in the islands is partially relaxed along the [1 (1) over bar0] direction. Our results present important information for the fabrication of 1.3 mum wavelength quantum dot devices.

混凝土薄壳球形水窖结构的优化设计

分析球形水窖空间结构的应力分布情况并进行几何尺寸优化,避免建设者根据经验来确定球形水窖的厚度、构造及混凝土标号,以节省建窖材料,同时防止应力不足而发生破坏。【方法】利用基于ANSYS平台新开发的窖体有限元分析软件,对实际中窖壁厚度为4和11 cm的混凝土薄壳球形水窖进行空间结构应力分析,同时以水窖耗材量最小为目标函数,以许用应力和变形量为约束条件,对其进行几何尺寸优化。【结果】计算得出窖壁厚度为4和11 cm的水窖最大拉应力分别为1 380.00和447.31 kPa,最大压应力分别为5 153.20和1 896.70 kPa;优化出空窖不利工况下容积为20,30和40 m3的球形水窖窖壁最佳厚度,即栗钙土地区分别为0.051,0.061和0.065m,黄土地区分别为0.050,0.059和0.062 m。【结论】经软件优化计算后的球形水窖结构,既能满足强度和刚度的要求,同时也最大限度地节约了材料用量;利用新开发的窖体结构优化分析软件,能够对球形水窖进行空间应力分析与结构优化,可以作为球形水窖设计软件。