Molecular phylogeny and biogeography of the highly specialized grade schizothoracine fishes (Teleostei : Cyprinidae) inferred from cytochrome b sequences

We recovered the phylogenetic relationships among 23 species and subspecies of the highly specialized grade schizothoracine fishes distributing at 36 geographical sites in the Tibetan Plateau and its Surrounding regions by analyzing sequences of cytochrome b genes. Furthermore, we estimated the possible divergent times among lineages based on a historical geological isolation event in the Tibetan Plateau. The molecular data revealed that the highly specialized grade schizothoracine fishes were not a monophyletic group, but were the same as genera Gymnocypris and Schizogypsis. Our results indicated that the molecular phylogenetic relationships apparently reflected their geographical and historical associations with drainages, namely species from the same and adjacent drainages clustered together and had close relationships. The divergence times of different lineages were well consistent with the rapid uplift phases of the Tibetan Plateau in the late Cenozoic, suggesting that the origin and evolution of schizothoracine fishes were strongly influenced by environment changes resulting from the upheaval of the Tibetan Plateau.

MOVPE growth of grade-strained bulk InGaAs/InP for broad-band optoelectronic device applications

In this paper we present a novel growth of grade-strained bulk InGaAs/InP by linearly changing group-III TMGa source flow during low-pressure metalorganic vapor-phase epitaxy (LP-MOVPE). The high-resolution X-ray diffraction (HRXRD) measurements showed that much different strain was simultaneously introduced into the fabricated bulk InGaAs/InP by utilizing this novel growth method. We experimentally demonstrated the utility and simplicity of the growth method by fabricating common laser diodes. As a first step, under the injection current of 100 mA, a more flat gain curve which has a spectral full-width at half-maximum (FWHM) of about 120 nm was achieved by using the presented growth technique. Our experimental results show that the simple and new growth method is very suitable for fabricating broad-band semiconductor optoelectronic devices. (C) 2003 Elsevier B.V. All rights reserved.

Effect of H2S on stress corrosion cracking and hydrogen permeation behaviour of X56 grade steel in atmospheric environment

Susceptibility to stress corrosion cracking of X56 steel and its relationship with hydrogen permeation behaviour in atmospheric environment containing H2S was investigated by hydrogen permeation tests at a slow strain rate. The results show that: the fracture strain decreases with the decrease of strain rate under the same experimental conditions; the fracture strain also decreases with the increase of H2S concentration under the same strain rate, and the increased concentration of H2S has no significant effect on the hydrogen permeation in the first wet, etc. dry cycle, however has lead to increased hydrogen permeation in the later cycles. The SEM images of the fractured surfaces show clear evidences of enhanced stress corrosion cracking susceptibility by H2S.