High performance 1689-nm quantum well diode lasers

1689-nm diode lasers used in medical apparatus have been fabricated and characterized. The lasers had pnpn InP current confinement structure, and the active region consisted of 5 pairs of InGaAs quantum wells and InGaAsP barriers. Stripe width and cavity length of the laser were 1.8 and 300 pm, respectively. After being cavity coated. and transistor outline (TO) packaged, the lasers showed high performance in practice. The threshold current was about 13 +/- 4 mA, the operation current and the lasing spectrum were about 58 6 mA and 1689 +/- 6 nm at 6-mW output power, respectively. Moreover, the maximum output power of the lasers was above 20 mW.

Proposal for studying N* resonances with the (p)over-barp -> (p)over-barn pi(+) reaction

A theoretical study of the (p) over barp -> (p) over barn pi(+) reaction for antiproton beam energy from 1 to 4 GeV is made by including contributions from various known N* and Delta* resonances. It is found that for the beam energy around 1.5 GeV, the contribution of the Roper resonance N-(1440)* produced by the t-channel sigma exchange dominates over all other contributions. Since such a reaction can be studied in the forthcoming PANDA experiment at the GSI Facility of Antiproton and Ion Research (FAIR), the reaction will be realistically the cleanest place for studying the properties of the Roper resonance and the best place for looking for other "missing" N* resonances with large coupling to N sigma.