柴达木盆地北缘西段油气运聚动力学研究

Hydrocarbon migration and accumulation are the important process to form reservoirs in sedimentary basins, and their researches are usually very difficult to be done in petroleum geology. In this paper, the west segment of northern margin of the Qaidam Basin was selected as study area. The concept of fault open coefficient, that combines multi-factors dealing with fault sealing, was applied to estimate semi-quantitatively the sealing characteristics of six faults which were considered controlling the hydrocarbon migration and accumulation. The data from boreholes were investigated to appraise the permeable characteristics of lithology combinations upon and beneath the unconformity surface. The result suggests that the basal conglomerates consist frequently the carriers. The data from boreholes and outcrops were collected to describe the sand carrier system. In order to eliminate the influence of inverse activities of the basin that made the formations be very steep, author adopts the phase method to build the basin models: for the steps before Pliocene the recovered true thickness maps were used to build the basin block; for the steps after Pliocene, the structure maps of today were used to build the basin block. During the modeling process, the results were calibrated by various measured data . the modeled results includes the dynamic evolvement course of trap form phase, vitrinite reflectance mature, the source rock expelled hydrocarbon intensity and fluid potential and petroleum plays. Author integrates the source rock expelled hydrocarbon intensity, fluid potential and carrier system and apply the migration technology based on percolation theory to simulate the oil and gas migration and accumulation course in the main accumulation times. The dominant pathways of oil and gas may show clearly the prospect distribution. Based on the hydrocarbon migration characteristics, the main control factors were synthesized, that including the effective source rock distribution, the match relationship of structural trap forming and hydrocarbon expelling from source rocks, the unconformity of Mesozoic and Cenozoic, the structures and the faults movement at Quaternary Finally, the author figures out the prospect plays in the study area.

Optical Diagnostic and Modeling Solution Growth Process of Sodium Chlorate Crystals

Both a real time optical interferometric experiment and a numerical simulation of two-dimension non-steady state model were employed to study the growth process of aqueous sodium chlorate crystals. The parameters such as solution concentration distribution, crystal dimensions, growth rate and velocity field were obtained by both experiment and numerical simulation. The influence of earth gravity during crystal growth process was analyzed. A reasonable theory model corresponding to the present experiment is advanced. The thickness of concentration boundary layer was investigated especially. The results from the experiment and numerical simulation match well.

Growth of Silicon Carbide Bulk Crystals by Physical Vapor Transport Method and Modeling Efforts in the Process Optimization

Silicon carbide bulk crystals were grown in an induction-heating furnace using the physical vapor transport method. Crystal growth modeling was performed to obtain the required inert gas pressure and temperatures for sufficiently large growth rates. The SiC crystals were expanded by designing a growth chamber having a positive temperature gradient along the growth interface. The obtained 6H-SiC crystals were cut into wafers and characterized by Raman scattering spectroscopy and X-ray diffraction, and the results showed that most parts of the crystals had good crystallographic structures.

The Head-On Colliding Process Of Binary Liquid Droplets At Low Velocity: High-Speed Photography Experiments And Modeling

The experimental and theoretical studies are reported in this paper for the head-on collisions of a liquid droplet with another of the same fluid resting on a solid substrate. The droplet on the hydrophobic polydimethylsiloxane (PDMS) substrate remains in a shape of an approximately spherical segment and is isometric to an incoming droplet. The colliding process of the binary droplets was recorded with high-speed photography. Head-on collisions saw four different types of response in our experiments: complete rebound, coalescence, partial rebound With conglutination, and coalescence accompanied by conglutination. For a complete rebound, both droplets exhibited remarkable elasticity and the contact time of the two colliding droplets was found to be in the range of 10-20 ms. With both droplets approximately considered as elastic bodies, Hertz contact theory was introduced to estimate the contact time for the complete rebound case. The estimated result Was found to be on the same order of magnitude as the experimental data, which indicates that the present model is reasonable. (C) 2008 Elsevier Inc. All rights reserved.

Control of Large-size SiC Growth Process Using Modeling tool

Large size bulk silicon carbide (SiC) crystals are commonly grown by the physical vapor transport (PVT) method. The PVT growth of SiC crystals involves sublimation and condensation, chemical reactions, stoichiometry, mass transport, induced thermal stress, as well as defect and micropipes generation and propagation. The quality and polytype of as-grown SiC crystals are related to the temperature distribution inside the growth chamber during the growth process, it is critical to predict the temperature distribution from the measured temperatures outside the crucible by pyrometers. A radio-frequency induction-heating furnace was used for the growth of large-size SiC crystals by the PVT method in the present study. Modeling and simulation have been used to develop the SiC growth process and to improve the SiC crystal quality. Parameters such as the temperature measured at the top of crucible, temperature measured at the bottom of the crucible, and inert gas pressure are used to control the SiC growth process. By measuring the temperatures at the top and bottom of the crucible, the temperatures inside the crucible were predicted with the help of modeling tool. SiC crystals of 6H polytype were obtained and characterized by the Raman scattering spectroscopy and SEM, and crystals of few millimeter size grown inside the crucible were found without micropipes. Expansion of the crystals were also performed with the help of modeling and simulation.

Growth of Silicon Carbide Bulk Crystals by Physical Vapor Transport Method and Modeling Efforts in the Process Optimization

Silicon carbide bulk crystals were grown in an induction-heating furnace using the physical vapor transport method. Crystal growth modeling was performed to obtain the required inert gas pressure and temperatures for sufficiently large growth rates. The SiC crystals were expanded by designing a growth chamber having a positive temperature gradient along the growth interface. The obtained 6H-SiC crystals were cut into wafers and characterized by Raman scattering spectroscopy and X-ray diffraction, and the results showed that most parts of the crystals had good crystallographic structures.

Modeling and optimization of semiconductor manufacturing process with neural networks

A neural network-based process model is proposed to optimize the semiconductor manufacturing process. Being different from some works in several research groups which developed neural network-based models to predict process quality with a set of process variables of only single manufacturing step, we applied this model to wafer fabrication parameters control and wafer lot yield optimization. The original data are collected from a wafer fabrication line, including technological parameters and wafer test results. The wafer lot yield is taken as the optimization target. Learning from historical technological records and wafer test results, the model can predict the wafer yield. To eliminate the "bad" or noisy samples from the sample set, an experimental method was used to determine the number of hidden units so that both good learning ability and prediction capability can be obtained.

the role of software process simulation modeling in software risk management: a systematic review

Univ SE Calif, Ctr Syst & Software Engn, ABB, Microsoft Res, IEEE, ACMSIGSOFT, N Carolina State Univ Comp Sci