Output Characteristics of an InP/InGaAsP Triangle Microcavity Laser

Mode competitions between modes with different output coupling efficiencies can result in optical bistability under certain asymmetric nonlinear gain. For a GaInAsP/InP equilateral triangle microlaser with the side length of 10 mu m, the drop of the output power with the increase of the injection current is observed corresponding to transverse mode transitions. Furthermore, the measured laser spectra up to 270 K show that lasing modes coexist with the wavelength interval of 39 nm at 240 K. The emission at 5.2 THz can be expected by the mode frequency beating with the 39 nm interval.

Mode characteristics of metallically coated square microcavity connected with an output waveguide

Mode characteristics of a square microcavity with an output waveguide on the middle of one side, laterally confined by an insulating layer SiO2 and a p-electrode metal Au, are investigated by two-dimensional finite-difference time-domain technique. The mode quality (Q) factors versus the width of the output waveguide are calculated for Fabry-Peacuterot type and whispering-gallery type modes in the square cavity. Mode coupling between the confined modes in the square cavity and the guided modes in the output waveguide determines the mode Q factors, which is greatly influenced by the symmetry behaviors of the modes. Fabry-Peacuterot type modes can also have high Q factors due to the high reflectivity of the Au layer for the vertical incident mode light rays. For the square cavity with side length 4 mu m and refractive index 3.2, the mode Q factors of the Fabry-Peacuterot type modes can reach 10(4) at the mode wavelength of 1.5 mu m as the output waveguide width is 0.4 mu m.

NUMERICAL ANALYSIS OF A NOVEL 980nm MICROCAVITY SEMICONDUCTOR OPTICAL AMPLIFIER WITH HIGH GAIN AND LOW NOISE

A novel microcavity semiconductor optical amplifier ( MCSOA) was proposed by incorporating top and bottom distributed Bragg reflectors ( DBRs) into the waveguide structure of conventional traveling-wave semiconductor optical amplifiers(TW-SOAs). The incoming( outgoing) light beam incidented onto (escaped from) the waveguide structure at a oblique angle through two optical windows, where the top DBR was etched away, and anti-reflection coating was deposited. The light beams inside the optical cavity were reflected repeatedly between two DBRs and propagated along waveguide in a zigzag optical path. The performance of the MCSOA was systematically investigated by extensive numerical simulation based on a traveling-wave model by taking into account the comprehensive effects of DBRs on both the amplification of signals and the filtering of spontaneous emission( SE). Our results show that the MCSOA is capable of achieving a fiber-to-fiber gain as high as 40dB and a low noise figure is less than 3.5dB.

Design of quantum cascade microcavity lasers based on Q factor versus etching depth

The choice of the etching depth for semiconductor microcavities is a compromise between a high Q factor and a difficult technique in a practical fabricating process. In this paper, the influences of the etching depth on mode Q factors for mid-infrared quantum cascade microcylinder and microsquare lasers around 4.8 and 7.8 mu m are simulated by three-dimensional (3D) finite-difference time-domain (FDTD) techniques. For the microcylinder and the microsquare resonators, the mode Q factors of the whispering-gallery modes (WGMs) increase exponentially and linearly with the increase in the etching depth, respectively Furthermore, the mode Q factors of some higher order transverse WGMs may be larger than that of the fundamental transverse WGM in 3D microsquares. Based on the field distribution of the vertical multilayer slab waveguide and the mode Q factors versus the etching depth, the necessary etching depth is chosen at the position where the field amplitude is 1% of the peak value of the slab waveguide. In addition, the influences of sidewall roughness on the mode Q factors are simulated for microsquare resonators by 2D FDTD simulation. (C) 2009 Optical Society of America

Fabry-Perot microcavity modes observed in the micro-photoluminescence spectra of the single nanowire with InGaAs/GaAs heterostructure

We report on the fabrication of the nanowires with InGaAs/GaAs heterostructures on the GaAs(111) B substrate using selective-area metal organic vapor phase epitaxy. Fabry-Perot microcavity modes were observed in the nanowires with perfect end facets dispersed onto the silicon substrate and not observed in the free-standing nanowires. We find that the calculated group refractive indices only considering the material dispersion do not agree with the experimentally determined values although this method was used by some researchers. The calculated group refractive indices considering both the material dispersion and the waveguide dispersion agree with the experimentally determined values well. We also find that Fabry-Perot microcavity modes are not observable in the nanowires with the width less than about 180 nm, which is mainly caused by their poor reflectivity at the end facets due to their weak confinement to the optical field. (C) 2009 Optical Society of America

Whispering-gallery microcavity semiconductor lasers suitable for photonic integrated circuits and optical interconnects

The characteristics of whispering-gallery-like modes in the equilateral triangle and square microresonators are introduced, including directional emission triangle and square microlasers connected to an output waveguide. We propose a photonic interconnect scheme by connecting two directional emission microlasers with an optical waveguide on silicon integrated circuit chip. The measurement indicates that the triangle microlasers can work as a resonance enhanced photodetector for optical interconnect.

Tunable giant Faraday rotation of exciton in semiconductor quantum wells embedded in a microcavity

The Faraday rotation of an exciton in a GaAs quantum well (QW) embedded in a microcavity is investigated theoretically. The authors find that the Faraday rotation is enhanced remarkably by the microcavity, with a magnitude about two orders of magnitude larger than that of a single QW without microcavity. The Faraday rotation can be tuned by changing the incident angle of the pump and probe lights, or by varying the temperature or an external electric field. With an appropriate detuning between the cavity mode of the pump and probe lights, the Faraday rotation spectrum displays a strongly asymmetric line shape, which can easily be detected experimentally.

Surface plasmon coupling in hexagonal textured metallic microcavity

The coupling of surface plasmons to the photonic modes in hexagonal textured metallic microcavity was studied. The modified photonic modes enable efficient coupling with the luminescence source in the microcavity. Hexagonal photonic crystal lattice has higher folding symmetry providing more channels for surface plasmon coupling in different in-plane directions, i.e., more isotropic light extraction profile than one-or two-dimensional gratings. Results show that strong coupling between surface plasmon modes and the waveguide mode in the microcavity has led to angle-selective enhanced light extraction and it was as much as 12 times more light extracted compare to planar microcavity. (c) 2006 American Institute of Physics.

The study of the behavior of exciton and photon within semiconductor microcavity under hydrostatic pressure

We studied, for the first time, the strong coupling between exciton and cavity mode within semiconductor microcavity under hydrostatic pressure, and measured the Rabi splitting. The strong coupling between exciton and cavity mode, and so Rabi splitting appear clearly as the applied pressure reaches 0.37-0.41 GPa. The experiment result shows that hydrostatic pressure not only can tune the coupling between exciton and cavity mode effectively, but also can keep exciton property almost unchanged during the whole tuning procedure in contrast to other tuning method (temperature field et al). Our result agrees with the related theory very well. The Rabi splitting, extracted from fitting the measured mode-energy vs pressure curves with correspanding theoretical model, is equal to 6 meV.

Lasing of CdSSe quantum dots in glass spherical microcavity

Glass spherical microcavities containing CdSSe semiconductor quantum dots (QDs) of a few microns in diameter are fabricated using a physical method. When a single glass microspherical cavity is excited by a laser beam at room temperature, very strong and sharp whispering gallery modes are shown on the background of PL spectra of CdSSe QDs, which confirms that coupling between the optical emission of embedded QDs and spherical cavity modes is realized. For a glass microsphere only 4.6 mum in diameter, it was found that the energy separation is nearly up to 26 nm both for TE and TM modes. With the increasing excitation intensity, the excitation intensity dependence of the emission intensity is not linear in the double-logarithmic scale. Above the threshold value, the linewidths of resonance modes become narrower. The lasing behavior is achieved at relatively low excitation intensity at room temperature. High optical stability and low threshold value make this optical system promising in visible microlaser applications. (C) 2002 Elsevier Science B.V. All rights reserved.

Mode splitting in photoluminescence spectra of a quantum-dot-embedded microcavity

A microcavity structure, containing self-assembled InGaAs quantum dots, is studied by angle-resolved photoluminescence (PL) spectroscopy. A doublet with the splitting energy of 0.5-1.5 nm appears when the detection angle is larger than 35degrees. This doublet is identified as mode splitting (not the Rabi splitting) by polarization measurements. We find that it is the considerable deviation of the cavity-mode frequency from the central frequency of the stop band that makes the TE and TM cavity modes split more discernibly. The inhomogeneous broadening of quantum dots gives the TE and TM cavity modes a chance to show up simultaneously in the PL spectra. (C) 2003 American Institute of Physics.

Coupling between cavity mode and heavy-hole exciton and light-hole exciton in semiconductor microcavity

The reflectivity spectra at different incident angles of semiconductor microcavity having heavy-hole exciton and light-hole exciton are calculated ly transfer matrix method using the linear dispersion model. Meanwhile we calculate the energy of three cavity polaritons at different incident angles formed by the coupling between cavity mode and the two exciton modes using the three harmonic oscillators coupling model, and the weights of cavity mode and the two exciton modes in the three cavity polaritons. The results indicate that there is obvious anticross between the high energy cavity polariton and the two low energy cavity polaritons with increasing incident angles, and the weights of three modes(cavity mode, heavy-hole exciton mode and light-hole exciton mode) in the three cavity polaritons increase or decrease.

Lasing of CdSexS1-x quantum dots in a glass spherical microcavity

A glass spherical microcavity only a few microns in diameter embedded with CdSexS1-x quantum dots (QDs) was fabricated using a physical method; it exhibited good optical stability under continuous-wave laser excitation with high power. We investigated the excitation power dependences of the emission intensity and the linewidth of both transverse electric and transverse magnetic resonance peaks of whispering gallery modes. Stimulated emission behaviour of multi-frequency modes is observed at room temperature. The low threshold value and large mode separation makes QD-containing microspheres promising for visible microlaser applications.

In-plane propagation of cavity polaritons in a quantum semiconductor microcavity

Considering that the coupling among the heavy-hole exciton, light-hole exciton and the cavity photon can form bipolaritons in a quantum semiconductor microcavity, we calculate the group velocities of the cavity polaritons at different incident angles using the coupling model of three harmonic oscillators. The result indicates that the group velocities of the low and middle branches of the cavity polaritons have extrema, but the group velocities of the high branch increase with the increasing incident angle.

Tuning of exciton-photon coupling in a planar semiconductor microcavity by applying hydrostatic pressure

By means of hydrostatic pressure tuning, we have observed the strong-coupling exciton-polariton mode in a planar microcavity with an InGaAs/GaAs quantum well embedded in it, over a pressure range from 0.37 to 0.41 GPa. The experimental data can be fitted very well to a corresponding theoretical formula with a unique value of the vacuum Rabi splitting equal to 6.0 meV. A comparison between pressure tuning and other tuning methods is made as regards to what extent the intrinsic features of the exciton and cavity will be influenced during the tuning procedure.