2 resultados para Metal-working machinery

em Chinese Academy of Sciences Institutional Repositories Grid Portal


Relevância:

80.00% 80.00%

Publicador:

Resumo:

Adiabatic shear localization is a mode of failure that occurs in dynamic loading. It is characterized by thermal softening occurring over a very narrow region of a material and is usually a precursor to ductile fracture and catastrophic failure. This reference source is the first detailed study of the mechanics and modes of adiabatic shear localization in solids, and provides a systematic description of a number of aspects of adiabatic shear banding. The inclusion of the appendices which provide a quick reference section and a comprehensive collection of thermomechanical data allows rapid access and understanding of the subject and its phenomena. The concepts and techniques described in this work can usefully be applied to solve a multitude of problems encountered by those investigating fracture and damage in materials, impact dynamics, metal working and other areas. This reference book has come about in response to the pressing demand of mechanical and metallurgical engineers for a high quality summary of the knowledge gained over the last twenty years. While fulfilling this requirement, the book is also of great interest to academics and researchers into materials performance.

Table of Contents

1Introduction1
1.1What is an Adiabatic Shear Band?1
1.2The Importance of Adiabatic Shear Bands6
1.3Where Adiabatic Shear Bands Occur10
1.4Historical Aspects of Shear Bands11
1.5Adiabatic Shear Bands and Fracture Maps14
1.6Scope of the Book20
2Characteristic Aspects of Adiabatic Shear Bands24
2.1General Features24
2.2Deformed Bands27
2.3Transformed Bands28
2.4Variables Relevant to Adiabatic Shear Banding35
2.5Adiabatic Shear Bands in Non-Metals44
3Fracture and Damage Related to Adiabatic Shear Bands54
3.1Adiabatic Shear Band Induced Fracture54
3.2Microscopic Damage in Adiabatic Shear Bands57
3.3Metallurgical Implications69
3.4Effects of Stress State73
4Testing Methods76
4.1General Requirements and Remarks76
4.2Dynamic Torsion Tests80
4.3Dynamic Compression Tests91
4.4Contained Cylinder Tests95
4.5Transient Measurements98
5Constitutive Equations104
5.1Effect of Strain Rate on Stress-Strain Behaviour104
5.2Strain-Rate History Effects110
5.3Effect of Temperature on Stress-Strain Behaviour114
5.4Constitutive Equations for Non-Metals124
6Occurrence of Adiabatic Shear Bands125
6.1Empirical Criteria125
6.2One-Dimensional Equations and Linear Instability Analysis134
6.3Localization Analysis140
6.4Experimental Verification146
7Formation and Evolution of Shear Bands155
7.1Post-Instability Phenomena156
7.2Scaling and Approximations162
7.3Wave Trapping and Viscous Dissipation167
7.4The Intermediate Stage and the Formation of Adiabatic Shear Bands171
7.5Late Stage Behaviour and Post-Mortem Morphology179
7.6Adiabatic Shear Bands in Multi-Dimensional Stress States187
8Numerical Studies of Adiabatic Shear Bands194
8.1Objects, Problems and Techniques Involved in Numerical Simulations194
8.2One-Dimensional Simulation of Adiabatic Shear Banding199
8.3Simulation with Adaptive Finite Element Methods213
8.4Adiabatic Shear Bands in the Plane Strain Stress State218
9Selected Topics in Impact Dynamics229
9.1Planar Impact230
9.2Fragmentation237
9.3Penetration244
9.4Erosion255
9.5Ignition of Explosives261
9.6Explosive Welding268
10Selected Topics in Metalworking273
10.1Classification of Processes273
10.2Upsetting276
10.3Metalcutting286
10.4Blanking293
 Appendices297
AQuick Reference298
BSpecific Heat and Thermal Conductivity301
CThermal Softening and Related Temperature Dependence312
DMaterials Showing Adiabatic Shear Bands335
ESpecification of Selected Materials Showing Adiabatic Shear Bands341
FConversion Factors357
 References358
 Author Index369
 Subject Index375

Relevância:

30.00% 30.00%

Publicador:

Resumo:

Photoluminescence (PL) and lasing properties of InAs/GaAs quantum dots (QDs) with direrent growth procedures prepared by metalorganic chemical vapour deposition are studied. PL measurements show that the low growth rate QD sample has a larger PL intensity and a narrower PL line width than the high growth rate sample. During rapid thermal annealing, however, the lowgrowth rate sample shows a greater blue shift of PL peak wave length. This is caused by the larger InAs layer thickness which results from the larger 2-3 dimensional transition critical layer thickness for the QDs in the low-growth-rate sample. A growth technique including growth interruption and in-situ annealing, named indium flush method, is used during the growth of GaAs cap layer, which can flatten the GaAs surface effectively. Though the method results in a blue shift of PL peak wavelength and a broadening of PL line width, it is essential for the fabrication of room temperature working QD lasers.