Instrumented impact testing of phenolphthalein polyether ketone

The Charpy impact fracture behaviour of unnotched specimens of phenolphthalein polyether ketone (PEK-C) was studied over a temperature range from room temperature to 220 degrees C by using an instrumented impact tester. The load-time and energy-time curves of PEK-C at different temperatures were recorded. From these curves, some important parameters, such as the maximum impact load, the maximum stress, the total impact energy, the crack initiation energy, the crack propagation energy etc., were obtained and their temperature dependences of PEK-C were investigated. The point of 100 percent maximum load on the load-time trace was shown to be the yield point. Two parameters, the ductile ratio (D.R.) and the ductility index (D.I.) were applied to characterize the ductility of PEK-C and their relationships to the relaxation processes were discussed.

Manipulation of host density affects infestation of a peritrich ciliate (Epistylis lacustris) on a calanoid copepod (Leptodiaptomus minutus) in Crystal Lake, Wisconsin, USA

Specimens of the calanoid copepod, Leptodiaptomus minutus, collected in June 1994 in oligotrophic: north temperate Crystal Lake, were infested with the stalked ciliate Epistylis lacustris. E. lacustris was highly specific to L. minutus and no other coexisting zooplankters were infested. Excluding nauplii, nearly 70% of copepods carried 1-20 ciliates, although the maximum load was as high as 250 ciliates. A lower percentage of nauplii were infested by the ciliate; those that were infested had a lower ciliate load than other copepod stages. Infestation by ciliates had no significant influence on the average egg number of female copepods. In a field experiment, higher copepod densities in enclosures resulted in a significantly higher infestation rate, but the ciliate load per individual copepod did not differ significantly among treatments.

THE IZOD IMPACT FRACTURE-BEHAVIOR OF PHENOLPHTHALEIN POLY(ETHER KETONE)

The Izod impact fracture behaviour of notched specimens of phenolphthalein poly(ether ketone) (PEK-C) has been studied over a temperature range from room temperature to 240 degrees C by using an instrumented impact tester. The temperature dependence of the maximum load, total impact energy, initiation energy, propagation energy, ductility index (DI) and the relationships between these parameters and the relaxation processes have been investigated.

The Newest Developments Of Load-Unload Response Ratio (Lurr)

The Load Unload Response Ratio (LURR) method is an intermediate-term earthquake prediction approach that has shown considerable promise. It is inspiring that its predictions using LURR have been improving. Since 2004 we have made a major breakthrough in intermediate-term earthquake forecasting of the strong earthquakes on the Chinese mainland using LURR and successfully predicted the Pakistan earthquake with magnitude M 7.6 on October 8, 2005. The causes for improving the prediction in terms of LURR have been discussed in the present paper.

Creep behavior of woven roving grp beam in three-point bending

The creep and relaxation behaviour of laminated glass fibre reinforced plastics (GRP) in three-point bending were studied both experimentally and analytically. Creep and relaxation experiments were carried out on eight types of specimens, consisting of glass fibre fabric reinforced epoxy beams. While the bending deflexion and creep strains were measured in the creep tests, the load and relaxation strain were recorded in the relaxation tests. Marked creep effects were seen in the tests, where the environment temperature was 50°C and the period of the measurement was 60 min. An attempt to predict the creep deflexion and relaxation behaviour was made. The transverse shear effect on creep deflexion was taken into account. The predicted results were compared with experimental ones. They were found to be in reasonable agreement, but the linearization assumption, upon which the relaxation behaviour analysis was based, appears to lead to larger inaccuracies in the results.

Fracture Properties of LPCVD Silicon Nitride and Thermally Grown Silicon Oxide Thin Films From the Load-Deflection of Long Si3N4 and SiO2/Si3N4 Diaphragms

The bulge test is successfully extended to the determination of the fracture properties of silicon nitride and oxide thin films. This is achieved by using long diaphragms made of silicon nitride single layers and oxide/nitride bilayers, and applying comprehensive mechanical model that describes the mechanical response of the diaphragms under uniform differential pressure. The model is valid for thin films with arbitrary z-dependent plane-strain modulus and prestress, where z denotes the coordinate perpendicular to the diaphragm. It takes into account the bending rigidity and stretching stiffness of the layered materials and the compliance of the supporting edges. This enables the accurate computation of the load-deflection response and stress distribution throughout the composite diaphragm as a function of the load, in particular at the critical pressure leading to the fracture of the diaphragms. The method is applied to diaphragms made of single layers of 300-nm-thick silicon nitride deposited by low-pressure chemical vapor deposition and composite diaphragms of silicon nitride grown on top of thermal silicon oxide films produced by wet thermal oxidation at 950 degrees C and 1050 degrees C with target thicknesses of 500, 750, and 1000 mn. All films characterized have an amorphous structure. Plane-strain moduli E-ps and prestress levels sigma(0) of 304.8 +/- 12.2 GPa and 1132.3 +/- 34.4 MPa, respectively, are extracted for Si3N4, whereas E-ps = 49.1 +/- 7.4 GPa and sigma(0) = -258.6 +/- 23.1 MPa are obtained for SiO2 films. The fracture data are analyzed using the standardized form of the Weibull distribution. The Si3N4 films present relatively high values of maximum stress at fracture and Weibull moduli, i.e., sigma(max) = 7.89 +/- 0.23 GPa and m = 50.0 +/- 3.6, respectively, when compared to the thermal oxides (sigma(max) = 0.89 +/- 0.07 GPa and m = 12.1 +/- 0.5 for 507-nm-thick 950 degrees C layers). A marginal decrease of sigma(max) with thickness is observed for SiO2, with no significant differences between the films grown at 950 degrees C and 1050 degrees C. Weibull moduli of oxide thin films are found to lie between 4.5 +/- 1.2 and 19.8 +/- 4.2, depending on the oxidation temperature and film thickness.

A base-emitter self-aligned multi-finger Si1-xGex/Si power heterojunction bipolar transistor

With a crystal orientation dependent on the etch rate of Si in KOH-based solution, a base-emitter self-aligned large-area multi-linger configuration power SiGe heterojunction bipolar transistor (HBT) device (with an emitter area of about 880 mu m(2)) is fabricated with 2 mu m double-mesa technology. The maximum dc current gain is 226.1. The collector-emitter junction breakdown voltage BVCEO is 10 V and the collector-base junction breakdown voltage BVCBO is 16 V with collector doping concentration of 1 x 10(17) cm(-3) and thickness of 400 nm. The device exhibited a maximum oscillation frequency f(max) of 35.5 GHz and a cut-off frequency f(T) of 24.9 GHz at a dc bias point of I-C = 70 mA and the voltage between collector and emitter is V-CE = 3 V. Load pull measurements in class-A operation of the SiGe HBT are performed at 1.9 GHz with input power ranging from 0 dBm to 21 dBm. A maximum output power of 29.9 dBm (about 977 mW) is obtained at an input power of 18.5 dBm with a gain of 11.47 dB. Compared to a non-self-aligned SiGe HBT with the same heterostructure and process, f(max) and f(T) are improved by about 83.9% and 38.3%, respectively.

Dislocation nucleation governed softening and maximum strength in nano-twinned metals

In conventional metals, there is plenty of space for dislocations-line defects whose motion results in permanent material deformation-to multiply, so that the metal strengths are controlled by dislocation interactions with grain boundaries(1,2) and other obstacles(3,4). For nano-structured materials, in contrast, dislocation multiplication is severely confined by the nanometre-scale geometries so that continued plasticity can be expected to be source-controlled. Nano-grained polycrystalline materials were found to be strong but brittle(5-9), because both nucleation and motion of dislocations are effectively suppressed by the nanoscale crystallites. Here we report a dislocation-nucleation-controlled mechanism in nano-twinned metals(10,11) in which there are plenty of dislocation nucleation sites but dislocation motion is not confined. We show that dislocation nucleation governs the strength of such materials, resulting in their softening below a critical twin thickness. Large-scale molecular dynamics simulations and a kinetic theory of dislocation nucleation in nano-twinned metals show that there exists a transition in deformation mechanism, occurring at a critical twin-boundary spacing for which strength is maximized. At this point, the classical Hall-Petch type of strengthening due to dislocation pile-up and cutting through twin planes switches to a dislocation-nucleation-controlled softening mechanism with twin-boundary migration resulting from nucleation and motion of partial dislocations parallel to the twin planes. Most previous studies(12,13) did not consider a sufficient range of twin thickness and therefore missed this strength-softening regime. The simulations indicate that the critical twin-boundary spacing for the onset of softening in nano-twinned copper and the maximum strength depend on the grain size: the smaller the grain size, the smaller the critical twin-boundary spacing, and the higher the maximum strength of the material.