41 resultados para Material characterization

em Chinese Academy of Sciences Institutional Repositories Grid Portal


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The natural frequencies of a cantilever probe can be tuned with an attached concentrated mass to coincide with the higher harmonics generated in a tapping-mode atomic force microscopy by the nonlinear tip-sample interaction force. We provide a comprehensive map to guide the choice of the mass and the position of the attached particle in order to significantly enhance the higher harmonic signals containing information on the material properties. The first three eigenmodes can be simultaneously excited with only one carefully positioned particle of specific mass to enhance multiple harmonics. Accessing the interaction force qualitatively based on the high-sensitive harmonic signals combines the real-time material characterization with the imaging capability. (C) 2008 American Institute of Physics.

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Thick GaN films were grown on sapphire in a home-made vertical HVPE reactor. Effect of nucleation treatments on the properties of GaN films was investigated, including the nitridation of sapphire, low temperature GaN buffer and MOCVD-template. Various material characterization techniques, including AFM, SEM, XRD, CL and PL have been used to assess these GaN epitaxial films. It was found that the surface of sapphire after high temperature nitridation was flat and showed high density nucleation centers. In addition, smooth Ga-polarity surface of epitaxial layer can be obtained on the nitridation sapphire placed in air for several days due to polarity inversion. This may be caused by the atoms re-arrangement because of oxidation. The roughness of N-polarity film was caused by the huge inverted taper domains, which can penetrate up to the surface. The low temperature GaN buffer gown at 650 degrees C is favorable for subsequent epitaxial film, which had narrow FWHM of 307 arcsec. The epitaxial growth on MOCVD-template directly came into quasi-2D growth mode due to enough nucleation centers, and high quality GaN films were acquired with the values of the FWHM of 141 arcsec for (002) reflections. After etching in boiled KOH, that the total etch-pit density was only 5 x 106 cm(-2) illustrated high quality of the thick film on template. The photoluminescence spectrum of GaN film on the MOCVD-template showed the narrowest line-width of the band edge emission in comparison with other two growth modes.

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Thick GaN films were grown on GaN/sapphire template in a vertical HVPE reactor. Various material characterization techniques,including AFM, SEM, XRD, RBS/Channeling, CL, PL, and XPS, were used to characterize these GaN epitaxial films. It was found that stepped/terraced structures appeared on the film surface,which were indicative of a nearly step-flow mode of growth for the HVPE GaN despite the high growth rate. A few hexagonal pits appeared on the surface, which have strong light emission. After being etched in molten KOH, the wavy steps disappeared and hexagonal pits with {1010} facets appeared on the surface. An EPD of only 8 ×10~6cm~(-2) shows that the GaN film has few dislocations. Both XRD and RBS channeling indicate the high quality of the GaN thick films. Sharp band-edge emission with a full width at half maximum(FWHM)of 67meV was observed, while the yellow and infrared emissions were also found. These emissions are likely caused by native defects and C and O impurities.

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Creep behavior of [±45°]s composite material is characterized by using uniaxial creep and recovery tests. The well-known Schapery nonlinear viscoelastic consti tutive relation was modified to make it suitable for characterizing the creep behavior of this material. Then, using this modified Schapery constitutive equation, by which the vis coplastic and creep damage can be taken into consideration, the creep behavior of [±45°]. glass fiber reinforced epoxy laminate was studied. The constitutive parameters of the material were determined experimentally, and the procedure and method of determination of the material parameters are proved to be valid.

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A novel periodic mesoporous organosilica (PMO) material was synthesized through one-step co-condensation of 1,2-bis(triethoxysilyl)ethane (BTESE) and benzoic acid-functionalized organosilane (BA-Si) using cetyltrimethylammonium bromide (CTAB) as a structure-directing agent under basic conditions. The materials were fully characterized by FTIR, XRD, N-2 adsorption-desorption isotherms and FESEM. FTIR spectra proved that BA-Si was successfully incorporated into the PMO materials (PMOs) via benzyl group as a linker. XRD and N-2 adsorption-desorption isotherms revealed the characteristic mesoporous structure with highly uniform pore size distributions. FESEM confirmed that the morphology of the PMOs was significantly dependent cri the molar ratio of two organosilica precursors.

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A series of soluble poly(amide-imide)s (PAIs) bearing triethylammonium sulfonate groups were synthesized directly using trimellitic anhydride chloride (TMAC) polycondensation with sulfonated diamine such as 2,2'-benzidinedisulfonic acid (BDSA), 4,4'-diaminodiphenyl ether-2,2'-disulfonic acid (ODADS), and nonsulfonated diamine 4,4-diaminodiphenyl methane in the presence of triethylamine. The resulting copolymers exhibited high molecular weights (high inherent viscosity), and a combination of desirable properties such as good solubility in dipolar aprotic solvents, film-forming capability, and good mechanical properties. Wide-angle X-ray diffraction revealed that the polymers were amorphous. These copolymers showed high permeability coefficients of water vapor because of the presence of the hydrophilic triethylammonium sulfonate groups. The water vapor permeability coefficients (P-w) and permselectivity coefficients of water vapor to nitrogen and methane [alpha(H2O/N-2) and (alpha(H2O/CH4)] Of the films increased with increasing the amount of the triethylammonium sulfonated groups.

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Nanometer-sized CeO2/polystyrene hybrid material was prepared using reversed micelles microemulsion method. XRD analysis revealed that the CeO2 nanoparticles in polystyrene were amorphous. XPS patterns indicated that the hybrid material was not a simply physical mixture, but a certain strength of chemical bond between CeO2 nanoparticles and polystyrene existed. FTIR patterns revealed that the absorption of Ce-O bond in hybrid material was blue-shifted.

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With a newly developed Material Failure Process Analysis code (MFPA(2D)), influence of hetero geneity on fracture processes and strength characterization of brittle disorder materials such as rock or concrete is numerically studied under uniaxial compression and tension conditions. It is found th at, due to the heterogeneity of the disordered material, relatively more diffused micro-fractures appear in the early stage of loading. Different from homogeneous materials such as glass, macro-crack nucleation starts well before the peak stress is reached and the crack propagation and coalescence can be traced, which can be taken as a precursory to predict the macro-fracture of the material. The presence of residual strength in the post-peak region and the resemblance in the stress-strain curves between tension and compression are significant results and are found to be dependent on the heterogeneity of the specimens. Examples showing the tentative applications of MFPA(2D) in modeling failure of composite materials and rock or civil engineering problem are also given in this paper.

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The interface adhesion strength (or interface toughness) of a thin film/substrate system is often assessed by the micro-scratch test. For a brittle film material, the interface adhesion strength is easily obtained through measuring the scratch driving forces. However, to measure the interface adhesion strength (or interface toughness) for a metal thin film material (the ductile material) by the microscratch test is very difficult, because intense plastic deformation is involved and the problem is a three-dimensional elastic-plastic one. In the present research, using a double-cohesive zone model, the failure characteristics of the thin film/substrate system can be described and further simulated. For a steady-state scratching process, a three-dimensional elastic-plastic finite element method based on the double cohesive zone model is developed and adopted, and the steady-state fracture work of the total system is calculated. The parameter relations between the horizontal driving forces (or energy release rate of the scratching process) and the separation strength of thin film/substrate interface, and the material shear strength, as well as the material parameters are developed. Furthermore, a scratch experiment for the Al/Si film/substrate system is carried out and the failure mechanisms are explored. Finally, the prediction results are applied to a scratch experiment for the Pt/NiO material system given in the literature.

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Poly(dimethylsiloxane) (PDMS) is usually considered as a dielectric material and the PDMS microchannel wall can be treated as an electrically insulated boundary in an applied electric field. However, in certain layouts of microfluidic networks, electrical leakage through the PDMS microfluidic channel walls may not be negligible, which must be carefully considered in the microfluidic circuit design. In this paper, we report on the experimental characterization of the electrical leakage current through PDMS microfluidic channel walls of different configurations. Our numerical and experimental studies indicate that for tens of microns thick PDMS channel walls, electrical leakage through the PDMS wall could significantly alter the electrical field in the main channel. We further show that we can use the electrical leakage through the PDMS microfluidic channel wall to control the electrolyte flow inside the microfluidic channel and manipulate the particle motion inside the microfluidic channel. More specifically, we can trap individual particles at different locations inside the microfluidic channel by balancing the electroosmotic flow and the electrophoretic migration of the particle.

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Four kinds of Y2O3 stabilized ZrO2 (YSZ) thin films with different Y2O3 content have been prepared on BK7 substrates by electron-beam evaporation method. Structural properties and surface morphology of thin films were investigated by X-ray diffraction (XRD) spectra and scanning probe microscope. Laser induced damage threshold (LIDT) was determined. It was found that crystalline phase and microstructure of YSZ thin films was dependent on Y2O3 molar content. YSZ thin films changed from monoclinic phase to high temperature phase (tetragonal and cubic) with the increase of Y2O3 content. The LIDT of stabilized thin film is more than that of unstabilized thin films. The reason is that ZrO2 material undergoes phase transition during the course of e-beam evaporation resulting in more numbers of defects compared to that of YSZ thin films. These defects act as absorptive center and the original breakdown points. (c) 2006 Elsevier B.V. All rights reserved.

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The cyanobacterium Nostoc commune Vaucher produces quite complex extracellular polysaccharides. The cyanobacterium is nitrogen fixing, and on growing the cyanobacterium in media with and without nitrogen, different types of extracellular polysaccharides were obtained. These were also different from the polysaccharides present in N. commune collected in the field. High pH anion exchange chromatography (HPAEC) of weak acid hydrolysates of the culture-grown material demonstrated that, in this case, HPAEC was useful for comparison of the different polymers. The main differences between the polymers from the field group and the culture-grown samples were the presence of substantial amounts of arabinose, 2-O-methylglucose, and glucuronic acid in the latter. Methylation studies also revealed a difference in the branching points on the glucose units between the field and cultured samples, being 1,4,6 for the first and 1,3,6 for the latter. The field acidic fraction gave, on weak acid hydrolysis and separation on BioGel P2 and HPAEC, 12 oligosaccharide fractions that were isolated and studied by different mass spectroscopy techniques. The structures of the oligosaccharides were determined, and two different series that can originate from two repeating pentamers were identified: GlcAl-4/6GlcM1-4Ga11-4Glc1-4Xyl and GlcAl-4/6Glc1-4Ga11-4Glc1-4Xyl. The difference between these oligosaccharides lies in the methyl substituent on carbon 2 of the glucose unit next to the nonreducing glucuronic acid unit. The polysaccharides from field material were shown to have a strong effect on the complement system.

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The SnO2 material prepared by sol-gel method was modified by thiourea solution in different concentrations (0.05, 0.1 and 0.2 mol dm(-3)). Then the structure and the average grain size of the SnO2 material were investigated by X-ray power diffraction. In order to understand the nature of the species on the SnO2 surfaces, the thermal gravimetric and differential thermal analyzer (TG-DTA) and IR spectra of these modified and unmodified sample were taken. The result indicates that the stability of oxygen adsorbed on thiourea-modified surface was improved and the amount of surface hydroxyl groups adsorbed on this grain surface was decreased. The thiourea adsorbed on SnO2 grain surface is translated to SO42- after sintered at 600 degrees C. SO42- species stabilize the resistance of the SnO2 sensor. (c) 2005 Elsevier B.V. All rights reserved.