Complex potentials and singular integral equation for curve crack problem in antiplane elasticity

Four types of the fundamental complex potential in antiplane elasticity are introduced: (a) a point dislocation, (b) a concentrated force, (c) a dislocation doublet and (d) a concentrated force doublet. It is proven that if the axis of the concentrated force doublet is perpendicular to the direction of the dislocation doublet, the relevant complex potentials are equivalent. Using the obtained complex potentials, a singular integral equation for the curve crack problem is introduced. Some particular features of the obtained singular integral equation are discussed, and numerical solutions and examples are given.

Numerical estimate of the stability curve for the flow past a rotating cylinder

It is demonstrated that the primary instability of the wake of a two-dimensional circular cylinder rotating with constant angular velocity can be qualitatively well described by the Landau equation. The coefficients of the Landau equation are determined by means of numerical simulations for the Navier-Stokes equations. The critical Reynolds numbers, which depend on the angular velocity of the cylinder, are evaluated correctly by linear regression. (C) 2004 American Institute of Physics.

Fluorescence properties and laser demonstrations of Nd-doped high silica glasses prepared by sintering nanoporous glass

Porous glass with high-SiO2 content was impregnated with Nd ions, and subsequently sintered at 1100 degrees C into a compact non-porous glass in air or reducing atmosphere. Sintering in a reducing atmosphere produced an intense violet-blue fluorescence at 394 nm. However, the sintering atmospheres almost did not affect the fluorescence properties in the infrared range. A good performance Nd3+-doped silica microchip laser operating at 1064 nm was demonstrated. The Nd-doped sintering glasses with high-SiO2 content are potential host materials for high power solid-state lasers and new transparent fluorescence materials. (c) 2007 Elsevier B.V. All rights reserved.

Blue green emission from a Cu+-Doped transparent material prepared by sintering porous glass

A colorless transparent, blue green emission material was fabricated by sintering porous glass impregnated with copper ions. The emission spectral profile obtained from Cu+ -doped high silica glass (HSG) by 267-mn monochromatic light excitation matches that obtained by pumping with an 800-nm femtosecond laser, indicating that the emissions in both cases come from an identical origin. The upconversion emission excited by 800-nm femtosecond laser is considered to be a three-photon excitation process. A tentative scheme of upconverted emission from Cu+ -doped HSG was also proposed. The glass materials presented herein are expected to find application in lamps, high density optical storage, and three-dimensional color displays.

Preparation and spectroscopic properties of Er3+-doped high silica glass fabricated by sintering nanoporous glass

A compact nonporous high silica (SiO2 % > 96%) glass containing 3400 ppm Er3+ ions, which was about ten times higher than that in Er-doped silica fiber amplifier (EDSFA), was synthesized by sintering porous glass immersed into erbium nitrate solution. The 1532 nm fluorescence has a FWHM (Full Width at Half Maximum) of 45 nm wider than that of EDSFA and possesses the glass with potential application in broadband fiber amplifiers. The Judd-Ofelt theoretical analysis reflects that Er3+ ions are located in a higher covalent environment which are comparable to those of aluminosilicate glass. (c) 2005 Elsevier B.V. All rights reserved.

Spectroscopic properties of Nd3+-doped high silica glass prepared by sintering porous glass

A new kind of Nd3+, -doped high silica glass (SiO2 > 96% (mass fraction)) was obtained by sintering porous glass impregnated with Nd3+, ions. The absorption and luminescence properties of high silica glass doped with different Nd3+, concentrations were studied. The intensity parameters Omega(t) (t = 2, 4, 6), spontaneous emission probability, fluorescence lifetime, radiative quantum efficiency, fluorescence branching ratio, and stimulated emission cross section were calculated using the Judd-Ofelt theory. The optimal Nd3+ concentration in high silica glass was 0.27% (mole fraction) because of its high quantum efficiency and emission intensity. By comparing the spectroscopic parameters with other Nd3+ doped oxide glasses and commercial silicate glasses, the Nd3+-doped high silica glasses are likely to be a promising material used for high power and high repetition rate lasers.

High quantum efficiency and high concentration erbium-doped silica glasses fabricated by sintering nanoporous glasses

A new method was used to prepare erbium-doped high silica (SiO2% > 96%) glasses by sintering nanoporous glasses. The concentration of erbium ions in high silica glasses can be considerably more than that in silica glasses prepared by using conventional methods. The fluorescence of 1532 nm has an FWHM (Full Wave at Half Maximum) of 50 nm, wider than 35 nm of EDSFA (erbium-doped silica fiber amplifer), and hence the glass possesses potential application in broadband fiber amplifiers. The Judd-Ofelt theoretical analysis reflects that the quantum efficiency of this erbium-doped glass is about 0.78, although the erbium concentration in this glass (6 x 103) is about twenty times higher than that in silica glass. These excellent characteristics of Er-doped high silica glass will be conducive to its usage in optical amplifiers and microchip lasers.

Rare-earth-doped silica microchip laser fabricated by sintering nanoporous glass

We report a new method for fabricating rare-earth-doped silica glasses for laser materials obtained by sintering nanoporous silica glasses impregnated with rare-earth-doped ions. The fabricated materials have no residual pores and show good optical and mechanical properties. Good performance from a Nd3+-doped silica microchip laser operating at 1.064 mum is successfully demonstrated, suggesting that the fabricated silica glasses have potential for use as active materials for high-power solid-state lasers. (C) 2005 Optical Society of America.

晶格匹配氮化镓和氧化锌基外延薄膜衬底材料ScAlMgO4晶体生长研究

采用提拉法成功生长了氮化镓和氧化锌基外延薄膜晶格匹配的ScAlMgO4单晶衬底材料,晶体呈透明白色,尺寸为Ф30mm×59mm,表面部分沿解理面有裂纹.粉末X射线衍射（XRD）分析表明经1400℃固相反应烧结的原料基本合成了ScAlMgO4多晶相.初步的偏光显微镜观察、晶体的粉末XRD表征、透过光谱和双晶摇摆测试表明晶体具有较好的光学性质和结晶质量.研究表明晶体本身的层状结构、较大的温度梯度和热应力的不均匀性是生长过程中引起晶体开裂的几个主要原因.

Optical spectral relation between the master and the frequency-locked slave lasers

In this paper, the spectral relation between the master and the frequency-locked slave laser (FLSL) is investigated by the conventional technique of optical intensity modulation and optical heterodyne. Experimentally, we demonstrate that under complete and stable locking condition, the lightwave of the FLSL and the sidebands of the master laser produced by the optical intensity modulation are perfectly coherent (frequency coherence). Referring to our recent studies, the lightwave of the master laser and its corresponding sidebands are also perfectly coherent. Additionally, the spectral structures of two perfectly coherent lightwaves are identical in the level of wave train. Therefore, we indirectly verify that the spectral structures of the FLSL and the master laser are identical in the level of wave train.

Curvature Correction of FWHM in the X-Ray Rocking Curve of Bent Heteroepitaxial Films

A method for accurate determination of the curvature radius of semiconductor thin films is proposed. The curvature-induced broadening of the x-ray rocking curve (XRC) of a heteroepitaxially grown layer can be determined if the dependence of the full width at half maximum (FWHM) of XRC is measured as a function of the width of incident x-ray beam. It is found that the curvature radii of two GaN films grown on a sapphire wafer are different when they are grown under similar MOCVD conditions but have different values of layer thickness. At the same time, the dislocation-induced broadening of XRC and thus the dislocation density of the epitaxial film can be well calculated after the curvature correction.

Quantum measurement of a solid-state qubit: A unified quantum master equation approach

Quantum measurement of a solid-state qubit by a mesoscopic detector is of fundamental interest in quantum physics and an essential issue in quantum computing. In this work, by employing a unified quantum master equation approach constructed in our recent publications, we study the measurement-induced relaxation and dephasing of the coupled-quantum-dot states measured by a quantum-point contact. Our treatment pays particular attention on the detailed-balance relation, which is a consequence of properly accounting for the energy exchange between the qubit and detector during the measurement process. As a result, our theory is applicable to measurement at arbitrary voltage and temperature. Both numerical and analytical results for the qubit relaxation and dephasing are carried out, and important features are highlighted in concern with their possible relevance to future experiments.