Investigation on the N-eff reverse annealing effect using TSC/I-DLTS: Relationship between neutron induced microscopic defects and silicon detector electrical degradations

Neutron induced defect levels in high resistivity silicon detectors have been studied using a current-based macroscopic defect analysis system: thermally stimulated current (TSC) and current deep level transient spectroscopy (I-DLTS). These studies have been correlated to the traditional C-V, I-V, and transient current and charge techniques (TCT/TChT) after neutron radiation and subsequent thermal anneals. It has been found that the increases of the space charge density, N-eff, in irradiated detectors after thermal anneals (N-eff reverse anneal) correspond to the increases of deep levels in the silicon bandgap. In particular, increases of the double vacancy center (V-V and V-V-- -) and/or C-i-O-i level have good correlations with the N-eff reverse anneal. It has also been observed that the leakage current of highly irradiated (Phi(n) > 10(13) n/cm(2)) detectors increases after thermal anneals, which is different from the leakage current annealing behavior of slightly irradiated (Phi(n) < 10(13) n/cm(2)) detectors. It is apparent that V-V center and/or C-i-O-i level play important roles in both N-eff and leakage current degradations for highly irradiated high resistivity silicon detectors.

Assessment of I-129 measurement at low MV tandem voltages

IEECAS SKLLQG

i-Motif Quadruplex DNA-Based Biosensor for Distinguishing Single- and Multiwalled Carbon Nanotubes

The increasing worldwide demand for carbon nanotubes (CNTs) and increasing concern regarding how to safely develop and use CNTs are requiring a low-cost, simple, and highly sensitive CNT detection assay for toxicological evaluation and environmental monitoring. However, this goal is still far from being achieved. All the current CNT detection techniques are not,applicable for automation and field analysis because they are dependent on highly expensive special instruments and complicated sample preparation. On the basis of the capability of single-walled carbon nanotubes (SWNTs) to specifically induce human telomeric i-motif formation, we design an electrochemical DNA (E-DNA) sensor that can distinguish single- and multiwalled carbon nanotubes both in buffer and in cell extracts. The E-DNA sensor can selectively detect SWNTs; with a direct detection limit of 0.2 ppm and has been demonstrated in cancer cell extracts. To the best of our knowledge, this is the first demonstration of a biosensing technique that can distinguish different types of nanotubes. Our work will provide new insights into how to design a biosensor for detection of carbon nanotubes.