Electrochemical preparation of microelectrodes modified with non-stoichiometric mixed-valent molybdenum oxides

A compact non-stoichiometric molybdenum (VI, V) oxide of blue film was grown on carbon fiber (CF) microelectrode surface be cycling the potential between + 0.2V and - 0.70V in a freshly prepared Na2MoO4 solution containing 5 x 10(-3) mol/L H2SO4. The quantity-of the oxide is controlled by the charge passing the electrode. The electrochemical pretreatment of CF microelectrode not only mises the deposition velocity of molybdenum oxide on CF surface, but also improves greatly the cyclic voltammetric behavior of the molybdenum oxide film prior to the electrodeposition. The cathodic processes are believed to yield the hydrogen molybdenum oxide bronzes HxMoO3(0 < x < 2), or substoichiometric lower molybdenum oxides with the formula MoO3-y(0 < y < 1). The anodic response results from the reversible oxidation of molybdenum bronze/Mo(V) centers [or perhaps Mo(IV) in more reduced coatings], to Mo(VI). Further information was gained about the chemical composition and valent state of Mo from XPS and SEM.

PREPARATION STRUCTURE AND PHYSICAL-PROPERTIES OF NEW SILVER LANTHANIDE MOLYBDENUM OXIDES [AGLNMO(2)O(8)(LN=LA-ND AND SM)]

We present the synthesis of AgLnMo(2)O(8) compounds with Ln = La-Nd and Sm. These compounds represent a scheelite-type structure characterized by MoO4- tetrahedrons. IR spectra show five absorption peaks in the region of 1000-400cm(-1), around 800cm(-1) and 400cm(-1), which correspond to the modes of the tetrahedral MoO42- groups. All of AgLnMo(2)O(8) (Ln = La-Nd and Sm) oxides are dielectric materials at room temperature. The temperature dependence of the magnetic susceptibility ofAgLnMo(2)O(8) (Ln = Ce-Nd and Sm) shows Curie-Weiss law behavior from 100K to 300K. This indicates that both Ce and Pr exist in +3 oxidation state in AgLnMo(2)O(8). For AgLaMo2O8, diamagnetic properties are found as expected.

ELECTROCHEMICAL PREPARATION OF MICROELECTRODES MODIFIED WITH NONSTOICHIOMETRIC MIXED-VALENT MOLYBDENUM OXIDES

A blue, conductive, compact, mixed-valent Mo(VI, V) oxide film was grown on carbon fiber (CF) microelectrode surface by cycling the potential between +0.20 and -0.70 V vs. SCE in a fresh prepared Na2MoO4 solution (pH = 2, H2SO4). The thickness of the oxid

Investigation of Chemical Bond Characteristics, Thermal Expansion Coefficients and Bulk Moduli of alpha-R2MoO6 and R2Mo2O7 (R = rare earths) by Using a Dielectric Chemical Bond Method

Theoretical researches are performed on the alpha-R2MoO6 (R = Y, Gd, Tb Dy, Ho, Er, Tm and Yb) and pyrochlore-type R2Mo2O7 (R = Y, Nd, Sm, Gd, Tb and Dy) rare earth molybdates by using chemical bond theory of dielectric description. The chemical bonding characteristics and their relationship with thermal expansion property and compressibility are explored. The calculated values of linear thermal expansion coefficient (LTEC) and bulk modulus agree well with the available experimental values. The calculations reveal that the LTECs and the bulk moduli do have linear relationship with the ionic radii of the lanthanides: the LTEC decreases from 6.80 to 6.62 10(-6)/K and the bulk modulus increases from 141 to 154 GPa when R goes in the order Gd, Tb Dy, Ho, Er, Tm, and Yb in the alpha-R2MoO6 series; while in the R2Mo2O7 series, the LTEC ranges from 6.80 to 6.61 10(-6)/K and the bulk modulus ranges from 147 to 163 GPa when R varies in the order Nd, Sm, Gd, Tb and Dy.

Unidirectional current flow of reversible redox couples on a MoO3 film-modified microelectrode

In this paper, we have investigated the reactivity of the molybdenum oxide film toward some standard redox systems (e.g., ferrocene (Fc) and its derivatives) and observed a few interesting phenomena. The results demonstrate that the electrochemical behaviour of Fc and its derivatives at the oxide-modified carbon fiber (CF) microelectrode differs from that at a bare CF microelectrode, The conductivity of the molybdenum oxide film is seriously affected by the range and the direction of the potential scan, which influences the electrochemical behaviour of these redox systems at the film electrode. If the cycling potential is more positive than the reduction potential of the molybdenum oxide film, the reduction and oxidation peak currents of Fc and its derivatives could not be observed. The result indicates that the molybdenum oxide film on a microelectrode surface cannot transfer electrons between the surface of the electrode and Fc or its derivatives due to the existence of a high resistance between the interface in these potential ranges. On the other hand, if the lower limit of the scan potential was extended to a potential more negative than the reduction peak potential of the film, the oxidation peak of Fc or its derivatives appeared at about the potential relative to E-0 of Fc or its derivatives on the bare electrode, and the peak current is proportional to the concentration of these couples in the electrolyte. To our surprise, the peak height on the modified electrode is much larger than that on the bare CF microelectrode under the same conditions in the range of low concentration of these couples, and the oxidation peak potential of these couples is more negative than that on the bare CF microelectrode. On the basis of the experimental observation, we propose that these redox couples may undergo an interaction with the reduction state of the molybdenum oxide film. The new phenomena that we observed have been explained by using this interaction. (C) 1997 Elsevier Science S.A.

The role of molybdenum oxide as anode interfacial modification in the improvement of efficiency and stability in organic light-emitting diodes

It has been experimentally found that molybdenum oxide (MoO3) as the interfacial modification layer on indium-tin-oxide (ITO) in organic light-emitting diodes (OLEDs) significantly improves the efficiency and lifetime. In this paper, the role of MoO3 and MoO3 doped N,N '-di(naphthalene-1-yl)-N,N '-diphenyl-benzidine (NPB) as the interface modification layer on ITO in improvement of the efficiency and stability of OLEDs is investigated in detail by atomic force microscopy (AFM), polarized optical microscopy, transmission spectra, ultraviolet photoemission spectroscopy (UPS) and X-ray photoemission spectroscopy (XPS).

A highly reduced polyoxoanion with phosphorus-centered alternate layers of Mo/V oxides, [(PMo2Mo6V4O40)-Mo-V-V-VI-O-IV((VO)-O-IV)(2)](9-)

An unusual polyoxometalate [H2N(C2H4)(2)NH2](4)(H3O)[(PMO2Mo6V4O40)-Mo-V-V-VI-O-IV((VO)-O-IV)(2)].H2O is hydrothermally synthesized and characterized by IR, UV-VIS, elemental analyses, X-ray photoelectron spectrum, ESR, TG and Single crystal X-ray diffraction. The title compound crystallizes in the orthorhombic space group Pbca with a = 15-227(5), b = 19.491(4), c = 18.737(3) Angstrom, V = 5123(2) Angstrom(3), Z = 4, and R-1 (wR(2)) = 0.0726(0.1416). The compound contains an unusual highly reduced pseudo-Keggin type polyoxoanion and exhibits an interesting phosphorus-centered alternate arrangement of layers of molybdenum and vanadium oxides.

STUDIES ON DEFECT STRUCTURE AND CATALYTIC PROPERTIES OF SN-MO OXIDES

The present work is devoted to the studies on relationship of structure and activity of Sn-Mo oxides by using XRD, ESR, IR, XPS, TEM and SEM. Eight samples with Mo/(Mo + Sn) rations: 0.0, 0.1, 0.2, 0.4, 0.6, 0.8, 0.9, 1.0 were prepared. On the basis of structure characterization, Sn-Mo oxides can be divided into three groups: Catalysts I with Mo/(Mo + So) less-than-or-equal-to 0.2, Catalysts II with 0.2 < Mo/(Mo + Sn) < 0.8, and catalysts III with Mo/(Mo + Sn) greater-than-or-equal-to 0.8. The solid solution of Mo5+ in tin oxide was formed and the cation vacancy was formed in catalysts I. The solid solution of Sn4+ in molybdenum oxide was formed in catalysts III. The lattice oxygen in catalysts III has higher mobility and reactivity than that in catalysts I. The catalysts III showed higher activity but lower selectivity than that of catalysts I.

Investigations on the promoting effect of metal oxides on La-V-O catalyst in propane oxidative dehydrogenation

The addition of reducible metal oxides as promoters shows a positive effect on the catalytic behavior of lanthanum vanadate (LaVO4). A C3H6 yield increase of 6.5% is observed at 500 degreesC on molybdenum-promoted LaVO4, which can be attributed to the change of the redox properties, the blocking of the strong oxidation sites of the catalysts and to an increase of the accessibility of the labile oxygen toward the reactant. The influence of the catalyst preparation method and of the Mo loading as well as the additional promoting effect of CO2 in the gas feed was also examined.

Effect of various alkaline-earth metal oxides on the broadband infrared luminescence from bismuth-doped silicate glasses

We report on the effect of various alkaline-earth metal oxides on the broadband infrared luminescence covering 1000-1600 nm wavelength region from bismuth-doped silicate glasses. The full width at half maximum (FWHM) of the infrared luminescence and the fluorescent lifetime is more than 200 nm and 400 mu s, respectively. The fluorescent intensity decreases with increasing basicity of host glasses. Besides the broadband infrared luminescence, luminescence centered at 640 nm was also observed, which should be ascribed to Bi2+ rather than to the familiar Bi3+. We suggest that the infrared luminescence should be assigned to the X-2 (2)Pi (3/2) -> X-1 (2)Pi(1/2) transition of BiO molecules dispersed in the host glasses. (c) 2006 Elsevier Ltd. All rights reserved.

Growth and characterization of new transparent conductive oxides single crystals beta-Ga2O(3): Sn

Tin oxide doped beta-Ga2O3 single crystals are recognized as transparent conductive oxides (TCOs) materials. They have a larger band gap (4.8 eV) than any other TCOs, thus can be transparent in UV region. This property shows that they have the potential to make the optoelectronic device used in even shorter wavelength than usual TCOs. beta-Ga2O3 single crystals doped with different Sn4+ concentrations were grown by the floating zone technique. Their optical properties and electrical conductivities were systematically studied. It has been found that their conductivities and optical properties were influenced by the Sn4+ concentrations and annealing. (c) 2006 Elsevier Ltd. All rights reserved.

Influence of deposition conditions on the microstructure of oxides thin films

Thin films of ZrO2, HfO2 and TiO2 were deposited on kinds of substrates by electron beam evaporation (EB), ion assisted deposition (IAD) and dual ion beam sputtering (DIBS). Then some of them were annealed at different temperatures. X-ray diffraction (XRD) was applied to determine the crystalline phase and the grain size of these films, and the results revealed that their microstructures strongly depended on the deposition conditions such as substrate, deposition temperature, deposition method and annealing temperature. Theory of crystal growth and migratory diffusion were applied to explain the difference of crystalline structures between these thin films deposited and treated under various conditions. (c) 2007 Elsevier B.V. All rights reserved.

First-principles study of p-type transparent conductive oxides CuXO2 (X=Y, Sc, and Al)

Using first-principles methods we have calculated electronic structures, optical properties, and hole conductivities of CuXO2 (X=Y, Sc, and Al). We show that the direct optical band gaps of CuYO2 and CuScO2 are approximately equal to their fundamental band gaps and the conduction bands of them are localized. The direct optical band gaps of CuXO2 (X=Y, Sc, and Al) are 3.3, 3.6, and 3.2 eV, respectively, which are consistent with experimental values of 3.5, 3.7, and 3.5 eV. We find that the hole mobility along long lattice c is higher than that along other directions through calculating effective masses of the three oxides. By analyzing band offset we find that CuScO2 has the highest valence band maximum (VBM) among CuXO2 (X=Y, Sc, and Al). In addition, the approximate transitivity of band offset suggests that CuScO2 has a higher VBM than CuGaO2 and CuInO2 [Phys. Rev. Lett. 88, 066405 (2002)]. We conclude that CuScO2 has a higher p-type doping ability in terms of the doping limit rule. (C) 2008 American Institute of Physics. [DOI: 10.1063/1.2991157]