Energetic protons emitted from coulomb explosion dynamics of large-sized hydrogen clusters driven by an ultrashort intense laser pulse

Protons with very high kinetic energy of about 10keV and the saturation effect of proton energy for laser intensity have been observed in the interaction of an ultrashort intense laser pulse with large-sized hydrogen clusters. Including the cluster-size distribution as well as the laser-intensity distribution on the focus spot, the theoretical calculations based on a simplified Coulomb explosion model have been compared with our experimental measurements, which are in good agreement with each other.

Nuclear fusion from Coulomb explosions of deuterated methane clusters subjected to ultraintense femtosecond laser pulses

This paper reports that Coulomb explosions taken place in the experiment of heteronuclear deuterated methane clusters ((CD4)(n)) in a gas jet subjected to intense femtosecond laser pulses (170 mJ, 70 fs) have led to table-top laser driven DD nuclear fusion. The clusters produced in supersonic expansion had an average energies of deuterons produced in the laser-cluster interaction were 60 and 1.5 KeV, respectively. From DD collisons of energetic deuterons, a yield of 2.5(+/-0.4)x10(4) fusion neutrons of 2.45 MeV per shot was realized, giving rise to a neutron production efficiency of about 1.5 x 10(5) per joule of incident laser pulse energy. Theoretical calculations were performed and a fairly good agreement of the calculated neutron yield with that obtained from the present experiment was found.

Coulomb explosion of hydrogen clusters irradiated by an ultrashort intense laser pulse

The explosion dynamics of hydrogen clusters driven by an ultrashort intense laser pulse has been analyzed analytically and numerically by employing a simplified Coulomb explosion model. The dependence of average and maximum proton kinetic energy on cluster size, pulse duration, and laser intensity has been investigated respectively. The existence of an optimum cluster size allows the proton energy to reach the maximum when the cluster size matches with the intensity and the duration of the laser pulse. In order to explain our experimental results such as the measured proton energy spectrum and the saturation effect of proton energy, the effects of cluster size distribution as well as the laser intensity distribution on the focus spot should be considered. A good agreement between them is obtained.

Preparation of I-2 clusters and their absorption spectra

Samples have been prepared at different temperatures by loading It molecules into the cages of zeolite 5A, and the measurements of the absorption spectra have been carried out for the prepared samples. It is shown that 12 molecular clusters are formed in the cages of zeolite 5A, and it is also found that molecular clusters which are bonded with intermolecular forces have an important feature, namely, the intermolecular distance in molecular clusters can be changed on different preparing conditions and the blue shift of absorption edges can not be as the criterion of forming molecular clusters.

Stability Of Adhesion Clusters And Cell Reorientation Under Lateral Cyclic Tension

This work is motivated by experimental observations that cells on stretched substrate exhibit different responses to static and dynamic loads. A model of focal adhesion that can consider the mechanics of stress fiber, adhesion bonds, and substrate was developed at the molecular level by treating the focal adhesion as an adhesion cluster. The stability of the cluster under dynamic load was studied by applying cyclic external strain on the substrate. We show that a threshold value of external strain amplitude exists beyond which the adhesion cluster disrupts quickly. In addition, our results show that the adhesion cluster is prone to losing stability under high-frequency loading, because the receptors and ligands cannot get enough contact time to form bonds due to the high-speed deformation of the substrate. At the same time, the viscoelastic stress fiber becomes rigid at high frequency, which leads to significant deformation of the bonds. Furthermore, we find that the stiffness and relaxation time of stress fibers play important roles in the stability of the adhesion cluster. The essence of this work is to connect the dynamics of the adhesion bonds (molecular level) with the cell's behavior during reorientation (cell level) through the mechanics of stress fiber. The predictions of the cluster model are consistent with experimental observations.

Molecular/Cluster Statistical Thermodynamics Methods To Simulate Quasi-Static Deformations At Finite Temperature

The rapid evolution of nanotechnology appeals for the understanding of global response of nanoscale systems based on atomic interactions, hence necessitates novel, sophisticated, and physically based approaches to bridge the gaps between various length and time scales. In this paper, we propose a group of statistical thermodynamics methods for the simulations of nanoscale systems under quasi-static loading at finite temperature, that is, molecular statistical thermodynamics (MST) method, cluster statistical thermodynamics (CST) method, and the hybrid molecular/cluster statistical thermodynamics (HMCST) method. These methods, by treating atoms as oscillators and particles simultaneously, as well as clusters, comprise different spatial and temporal scales in a unified framework. One appealing feature of these methods is their "seamlessness" or consistency in the same underlying atomistic model in all regions consisting of atoms and clusters, and hence can avoid the ghost force in the simulation. On the other hand, compared with conventional MD simulations, their high computational efficiency appears very attractive, as manifested by the simulations of uniaxial compression and nanoindenation. (C) 2008 Elsevier Ltd. All rights reserved.

Size effects on the melting of nickel nanowires: a molecular dynamics study

The melting process of nickel nanowires are simulated by using molecular dynamics with the quantum Sutten-Chen many-body force field. The wires studied were approximately cylindrical in cross-section and periodic boundary conditions were applied along their length; the atoms were arranged initially in a face-centred cubic structure with the [0 0 1] direction parallel to the long axis of the wire. The size effects of the nanowires on the melting temperatures are investigated. We find that for the nanoscale regime, the melting temperatures of Ni nanowires are much lower than that of the bulk and are linear with the reciprocal of the diameter of the nanowire. When a nanowire is heated up above the melting temperature, the neck of the nanowire begins to arise and the diameter of neck decreases rapidly with the equilibrated running time. Finally, the breaking of nanowire arises, which leads to the formation of the spherical clusters. (C) 2004 Elsevier B.V. All rights reserved.

Vacancy clusters in ultrafine grained Al by severe plastic deformation

Bulk nanostructured metals are often formed via severe plastic deformation (SPD). The dislocations generated during SPD evolve into boundaries to decompose the grains. Vacancies are also produced in large numbers during SPD, but have received much less attention. Using transmission electron microscopy, here we demonstrate a high density of unusually large vacancy Frank loops in SPD-processed Al. They are shown to impede moving dislocations and should be a contributor to strength. (C) 2007 American Institute of Physics.

Molecular systematics of pikas (genus Ochotona) inferred from mitochondrial DNA sequences

The phylogenetic relationships among worldwide species of genus Ochotona were investigated by sequencing mitochondrial cytochrome b and ND4 genes. Parsimony and neighbor-joining analyses of the sequence data yielded congruent results that strongly indicated three major clusters: the shrub-steppe group, the northern group, and the mountain group. The subgeneric classification of Ochotona species needs to be revised because each of the two subgenera in the present classification contains species from the mountain group. To solve this taxonomic problem so that each taxon is monophyletic, i.e., represents a natural clade, Ochotona could be divided into three subgenera, one for the shrub-steppe species, a second for the northern species, and a third for the mountain species. The inferred tree suggests that the differentiation of this genus in the Palearctic Region was closely related to the gradual uplifting of the Tibet (Qinghai-Xizang) Plateau, as hypothesized previously, and that vicariance might have played a major role in the differentiation of this genus on the Plateau, On the other hand, the North American species, O. princeps, is most likely a dispersal event, which might have happened during the Pliocene through the opening of the Bering Strait. The phylogenetic relationships within the shrub-steppe group are worth noting in that instead of a monophyletic shrub-dwelling group, shrub dwellers and steppe dwellers are intermingled with each other. Moreover, the sequence divergence within the sister tars of one steppe? dweller and one shrub dweller is very low. These findings support the hypothesis that pikes have entered the steppe environment several times and that morphological similarities within steppe dwellers were due to convergent evolution. (C) 2000 Academic Press.

Molecular phylogeography of endangered sharp-snouted pitviper (Deinagkistrodon acutus; Reptilia, Viperidae) in Mainland China

Using phylogenetic and population genetic approaches, the present study reports the phylogeographic structure of the sharp-snouted pitviper (Deinagkistrodon acutus), a threatened snake species with commercial and medicinal importance in China. The entire mitochondrial ND2 gene (NADH dehydrogenase subunit 2) sequences of 86 individuals of D. acutus from 14 localities across its range in China were determined. Based on the results of phylogenetic analyses, distribution of diagnostic sites, haplotype network, and AMOVA hierarchical analysis, an cast-west division of the whole D. acutus population could be observed. Geographically, a line formed by a lake, river, and mountain chain (the Poyang Lake, Gan River to the southern end of the Wuyi Mountains), results in vicariance and approximately vertically splits the range into two and the whole population into two main lineages (western and eastern). The bifurcating tree suggested generally west to east dispersal trend. The data fit the isolation by distance (IBD) model well. Star-like clusters in haplotype network, significantly negative values of Fs statistics, and unimodal mismatch distributions all suggest recent demographic expansions in four areas. The results show that isolation, dispersal, bottleneck, and expansion jointly constitute the history of D. acutus. In a haplotype network, the excessive predominance of central haplotypes, few medium-frequency haplotypes, predominance (73.1 %) of the singletons among the derived haplotypes, most of which are connected to the central haplotype by only one mutational step, unsymmetrical campanulate unimodal curve of mismatch distributions and leftwards shift of the peaks, all suggest that the whole D. acutus population is a young population with low genetic diversity. Based on the data, the first priority for conservation action should be given to the Huangshan unit. (c) 2007 Elsevier Inc. All rights reserved.

Thermal annealing effect on InAs/InGaAs quantum dots grown by atomic layer molecular beam epitaxy

The effect of rapid thermal annealing on the InAs quantum dots (QDs) grown by atomic layer molecular beam epitaxy and capped with InGaAs layer has been investigated using transmission electron microscopy and photoluminescence (PL). Different from the previously reported results, no obvious blueshift of the PL emission of QDs is observed until the annealing temperature increases up to 800 degreesC. The size and shape of the QDs annealed at 750 degreesC have hardly changed indicating the relatively weak Ga/In interdiffusion, which is characterized by little blueshift of the PL peak of QDs. The QD size increases largely and a few large clusters can be observed after 800 degreesC RTA, implying the fast interdiffusion and the formation of InGaAs QDs. These results indicate that the delay of the blueshift of the PL peak of QDs is correlated with the abnormal interdiffusion process, which can be explained by two possible reasons: the reduction of excess-As-induced defects and the redistribution of In, Ga atoms around the InAs QDs resulted from the sub-monolayer deposition of InGaAs capping layer. (C) 2004 Elsevier B.V. All rights reserved.

Evolution from point defects to arsenic clusters in low-temperature grown GaAs/AlGaAs multiple quantum wells

Optical transient current spectroscopy (OTCS), photoluminescence (PL) spectroscopy and excitonic electroabsorption spectroscopy have been used to investigate the evolution of defects in the low-temperature grown GaAs/AlGaAs multiple quantum well structures during the postgrowth rapid thermal annealing. The sample was grown at 350 degrees C by molecular beam epitaxy on miscut (3.4 degrees off (001) towards (111)A) (001) GaAs substrate. After growth, the sample was subjected to 30s rapid thermal annealing in the range of 500-800 degrees C. It is found that the integrated PL intensity first decreases with the annealing temperature, then gets a minimum at 600 degrees C and finally recovers at higher temperatures. OTCS measurement shows that besides As,, antisites and arsenic clusters, there are several relatively shallower deep levels with excitation energies less than 0.3 eV in the as-grown and 500 degrees C-annealed samples. Above 600 degrees C, OTCS signals from As,, antisites and shallower deep levels become weaker, indicating the decrease of these defects. It is argued that the excess arsenic atoms group together to form arsenic clusters during annealing. (C) 2000 Elsevier Science B.V. All rights reserved.

Annealing effect on the surface morphology and photoluminescence of InGaAs/GaAs quantum dots grown by molecular beam epitaxy

Postgrowth rapid thermal annealing was performed on InGaAs/GaAs quantum dots grown by molecular beam epitaxy. The blue shift of the emission peak and the narrowing of the luminescence line width are observed at lower annealing temperature. However, when the annealing temperature is increased to 850 degrees C, the emission line width becomes larger. The TEM image of this sample shows that the surface becomes rough, and some large clusters are formed, which is due to the interdiffusion of In, Ga atoms at the InGaAs/GaAs interface and to the strain relaxation. The material is found to degrade dramatically when the annealing temperature is further increased to 900 degrees C, while emission from quantum dots can still be detected, along with the appearance of the emission from excited state. (C) 2000 Elsevier Science B.V. All rights reserved.

Arsenic clusters on the surface of vertically aligned InAs islands on GaAs substrate by annealing

The formation of arsenic clusters in a system of vertically aligned InAs quantum islands on GaAs during thermal annealing under As overpressure has been investigated by transmission electron microscopy (TEM) and Raman scattering. Semicoherent arsenic clusters, identified by TEM examination, have been formed on the surface of the GaAs capping layer. The existence of arsenic precipitates is also confirmed by Raman spectra, showing new peaks from the annealed specimen at 256 and 199 cm(-1). These peaks have been ascribed to A(1g) and E-g Raman active phonons of crystalline arsenic. The phenomenon can be understood by a model of strain-induced selected growth under As overpressure. (C) 1999 American Institute of Physics. [S0003-6951(99)02045-8].