Influence of Local Magnetic Fields on P-Doped Si Floating Zone Melting Crystal Growth in Microgravity

A two-dimensional axisymmetric numerical model is presented to study the influence of local magnetic fields on P-doped Si floating zone melting crystal growth in microgravity. The model is developed based on the finite difference method in a boundary-fitted curvilinear coordinate system. Extensive numerical simulations are carried out, and parameters studied include the curved growth interface shape and the magnetic field configurations. Computed results show that the local magnetic field is more effective in reducing the impurity concentration nonuniformity at the growth interface in comparison with the longitudinal magnetic field. Moreover, the curved growth interface causes more serious impurity concentration nonuniformity at the growth interface than the case with a planar growth interface.

Application of enthalpy method for moving boundary problem in laser surface melting

A numerical analysis was carried out to study the moving boundary problem in the physical process of pulsed Nd-YAG laser surface melting prior to vaporization. The enthalpy method was applied to solve this two-phase axisymmetrical melting problem Computational results of temperature fields were obtained, which provide useful information to practical laser treatment processing. The validity of enthalpy method in solving such problems is presented.

Influence of grain boundary on melting

The temperature behaviour of an Al bicrystal with surfaces consisting of (110) and (111) crystals is simulated using molecular dynamics. The result shows that the (110) crystal losses its crystalline order at 820K, whereas the disorder does not propagate through the (111) crystal at this temperature. Instead, some disordered atoms are recrystallized into the (111) crystal and the initial grain boundary changes into a stable order-disorder interface. Thus, it was discovered that at a temperature near its melting point, the (111) crystal grew and obstructed the propagation of disorder. Such an obstruction is helpful for understanding melting.

Numerical Simulation of Transient Thermal Field and Residual Stress in Laser Melting Process

以激光熔凝表面强韧化处理为背景,应用空间弹塑性有限单元和高精度数值算法同时考虑材料组织性能的变化模拟工件的温度场及残余应力,研究激光熔凝加工中瞬时温度场及残余应力数值模拟,同时考虑相变潜热及相变塑性的影响,用算例验证了模型的正确性,给出了不同时刻温度场分布及残余应力分布。

Three-Dimensional Modeling of Heat Transfer and Fluid Flow in Laminar-Plasma Material Re-Melting Processing

Modeling study is performed concerning the heat transfer and fluid flow for a laminar argon plasma jet impinging normally upon a flat workpiece exposed to the ambient air. The diffusion of the air into the plasma jet is handled by using the combined-diffusion-coefficient approach. The heat flux density and jet shear stress distributions at the workpiece surface obtained from the plasma jet modeling are then used to study the re-melting process of a carbon steel workpiece. Besides the heat conduction within the workpiece, the effects of the plasma-jet inlet parameters (temperature and velocity), workpiece moving speed, Marangoni convection, natural convection etc. on the re-melting process are considered. The modeling results demonstrate that the shapes and sizes of the molten pool in the workpiece are influenced appreciably by the plasma-jet inlet parameters, workpiece moving speed and Marangoni convection. The jet shear stress manifests its effect at higher plasma-jet inlet velocities, while the natural convection effect can be ignored. The modeling results of the molten pool sizes agree reasonably with available experimental data.

A Lennard-Jones Embedded-Atom Potential and Its Application to the Study of Melting

The nearest-neighbour Lennard-Jones potential from the embedded-atom method is extended to a form that includes more than nearest neighbours. The model has been applied to study melting with molecular dynamics. The calculated melting point, fractional volume change on melting, heat of fusion and linear coefficients of thermal expansion are in good agreement with experimental data. We have found that the second and third neighbours influence the melting point distinctly.

Numerical Simulation of Transient Thermal Field in Laser Melting Process

Numerical simulation of thermal field was studied in laser processing. The 3-D finite element model of transient thermal calculation is given by thermal conductive equation. The effects of phase transformation latent are considered. Numerical example is given to verify the model. Finally the real example of transient thermal field is given.

Melting and Crystallization of Nd60Al10Fe20Co10 Bulk Metallic Glass under High Pressure

Crystallization, melting and structural evolution upon crystallization in Nd60Al10Fe20Co10 bulk metallic glass (BMG) are in situ investigated by x-ray diffraction with synchrotron radiation under high pressure. It is found that the crystallization is pressure promoted, while themelting is inhibited. The crystallization and melting process are also changed under high pressure. The features of the crystallization and melting under high pressure are discussed.

Effect of Surface Condition of Electrode on the Surface Melting of Material by Laser-Guided Micro-Arc Discharge

This paper studies the surface melting in the atmosphere by YAG laser-guided micro-arc discharge. In three kinds of surface conditions (free, oiled, and polyethylene covered), we try to control the diameter and the power density of discharge pit. It is found that the power density of 3 x 10(6) W/cm(2) of discharge pit on the oiled surface is moderate to form the melted layer thicker than that of the others, adapting to strengthen the surface of material, and the power density of 1.07 x 10(7) W/cm(2) of discharge pit on the polyethylene-covered surface is highest to form the deepest discharge pit among them, adapting to remove the material.

Surface-induced melting of metal nanoclusters

We investigate the size effect on melting of metal nanoclusters by molecular dynamics simulation and thermo dynamic theory based on Kofman's melt model. By the minimization of the free energy of metal nanoclusters with respect to the thickness of the surface liquid layer, it has been found that the nanoclusters of the same metal have the same premelting temperature T-pre = T-0 - T-0(gamma(su) - gamma(lv) - gamma(sl))/(rhoLxi) (T-0 is the melting point of bulk metal, gamma(sv) the solid-vapour interfacial free energy, gamma(sl) the liquid-vapour interfacial free energy, gamma(sl),l the solid-liquid interfacial free energy, p the density of metal, L the latent heat of bulk metal, and xi the characteristic length of surface-interface interaction) to be independent of the size of nanoclusters, so that the characteristic length of a metal can be obtained easily by T-pre, which can be obtained by experiments or molecular dynamics (MD) simulations. The premelting temperature T-pre of Cu is obtained by AID simulations, then xi is obtained. The melting point T-cm is further predicted by free energy analysis and is in good agreement with the result of our MD simulations. We also predict the maximum premelting-liquid width of Cu nanoclusters with various sizes and the critical size, below which there is no premelting.

Size effects on the melting of nickel nanowires: a molecular dynamics study

The melting process of nickel nanowires are simulated by using molecular dynamics with the quantum Sutten-Chen many-body force field. The wires studied were approximately cylindrical in cross-section and periodic boundary conditions were applied along their length; the atoms were arranged initially in a face-centred cubic structure with the [0 0 1] direction parallel to the long axis of the wire. The size effects of the nanowires on the melting temperatures are investigated. We find that for the nanoscale regime, the melting temperatures of Ni nanowires are much lower than that of the bulk and are linear with the reciprocal of the diameter of the nanowire. When a nanowire is heated up above the melting temperature, the neck of the nanowire begins to arise and the diameter of neck decreases rapidly with the equilibrated running time. Finally, the breaking of nanowire arises, which leads to the formation of the spherical clusters. (C) 2004 Elsevier B.V. All rights reserved.

Coupling of melting-solidification phase-change convection with floating-zone convection under microgravity

A finite element algorithm is used to analyze the process of floating zone crystal growth under microgravity. The effect of phase change convection coupled with surface tension convection is considered. The results show that the rate of crystal growth is very important. The single-crystal-melt interface is steeper than the feed-melt interface during the process of crystal growth. When the rate exceeds a critical value, the Marangoni vortex near the feed-melt interface will become so large that a secondary vortex will exist.

Steady axi-symmetrical thermocapillary motion of a short melting column

This paper deals with the steady axi-symmetric thermo-capillary motion in a short meltingcolumn.with the assumptions that the Marangoni number M<<1, the Reynolds number Re<<1 andthe capillary number C<<1, at the leading order, the solutions of the problem are obtained inthe form of series. For two kinds of typical cases, symmetric and anti-symmetric distributionof air temperature, the numerical calculations are made. The results describe the effect ofendwalls on thermo-capillary flow.

Effects of melting temperature on the broadband infrared luminescence of bi-doped and Bi/Dy co-doped chalcohalide glasses

Bismuth (Bi)-doped and Bi/Dy co-doped chalcohalide glasses are investigated as promising materials for amplifiers in optical communication. The samples synthesized at lower melting temperatures (MTs) are characterized by more intensified infrared emissions. With respect to the redox process of a liquid mixture at different MTs, we attribute an emission at 1230 nm to low-valent Bi ions. The lower MT favors the formation of LVB ions, i.e. Bi+ or Bi2+, while the higher MT promotes the production of higher-valent Bi ions Bi3+. An enhanced broadband infrared luminescence with the full-width at half-maximum over 200 nm is achieved from the present Bi/Dy co-doped chalcohalide glasses.