Combined effect of surface tension, gravity and van der Waals force induced by a non-contact probe tip on the shape of liquid surface

Aiming at understanding how a liquid film on a substrate affects the atomic force microscopic image in experiments, we present an analytical representation of the shape of liquid surface under van der Waals interaction induced by a non-contact probe tip. The analytical expression shows good consistence with the corresponding numerical results. According to the expression, we find that the vertical scale of the liquid dome is mainly governed by a combination of van der Waals force, surface tension and probe tip radius, and is weekly related to gravity. However, its horizontal extension is determined by the capillary length.

露天矿边坡动态整治方法及其应用--以福建潘洛铁矿滑坡整治为例

露天矿边坡属于人工边坡,它的形成不仅时间长,而且一直处于动态过程中.露天矿滑坡在一定范围内是允许的,滑坡治理的目的是保证矿山在开采期限内安全采出设计境界内的矿石.基于这些特征,在文中提出了适合露天矿滑坡治理的新方法-动态治理法及其可行性,并以潘洛铁矿露天矿滑坡灾害治理为例,对该方法的应用进行了论述.可为露天矿滑坡治理所借鉴.

Tensile Tests Of Micro Anchors Anodically Bonded Between Pyrex Glass And Aluminum Thin Film Coated On Silicon Wafer

Micro anchor is a kind of typical structures in micro/nano electromechanical systems (MEMS/NEMS), and it can be made by anodic bonding process, with thin films of metal or alloy as an intermediate layer. At the relative low temperature and voltage, specimens with actually sized micro anchor structures were anodically bonded using Pyrex 7740 glass and patterned crystalline silicon chips coated with aluminum thin film with a thickness comprised between 50 nm and 230 nm. To evaluate the bonding quality, tensile pulling tests have been finished with newly designed flexible fixtures for these specimens. The experimental results exhibit that the bonding tensile strength increases with the bonding temperature and voltage, but it decreases with the increase of the thickness of Al intermediate layer. This kind of thickness effect of the intermediate layer was not mentioned in the literature on anodic bonding. (C) 2008 Elsevier Ltd. All rights reserved.

孔径光阑限制下高斯光束的传输

对高斯光束在硬边孔径限制下的衍射进行了详细的理论研究，就不同口径的圆孔限制下高斯光束在菲涅耳衍射区和夫琅禾费衍射区的分布进行了理论分析，从而得到了孔径受限高斯光束的横向以及轴向的衍射公式，进而对高斯光束在不同衍射区域内衍射光场分布形状随孔径尺寸变化时的演化规律进行了数值计算，并对小口径光阑受限的高斯光束的衍射与平行光经同尺寸光阑的衍射进行了比较。结果表明在较小口径下，两者的分布基本一致。得到的孔径光阑限制下高斯光束的传输规律为高斯光束在自由空间光通信和光学超分辨中的应用提供了理论基础。

Aberration measurement of projection optics in lithographic tools by use of an alternating phase-shifting mask

As a critical dimension shrinks, the degradation in image quality caused by wavefront aberrations of projection optics in lithographic tools becomes a serious problem. It is necessary to establish a technique for a fast and accurate in situ aberration measurement. We introduce what we believe to be a novel technique for characterizing the aberrations of projection optics by using an alternating phase-shifting mask. The even aberrations, such as spherical aberration and astigmatism, and the odd aberrations, such as coma, are extracted from focus shifts and image displacements of the phase-shifted pattern, respectively. The focus shifts and the image displacements are measured by a transmission image sensor. The simulation results show that, compared with the accuracy of the previous straightforward measurement technique, the accuracy of the coma measurement increases by more than 30% and the accuracy of the spherical-aberration measurement increases by approximately 20%. (c) 2006 Optical Society of America.

一个脱毛相关基因及其应用

本发明涉及一个脱毛相关基因及其应用，属于生物技术领域。本发明确定了一无毛基因与昆明小鼠脱毛性状的相关性。该基因被定位于小鼠14号染色体，在细胞遗传图谱上的位置是14D1，在连锁图谱上的位置是39.5cM，全长约20.281KbDNA序列，转录产物(cDNA)有4017bp，含有19个外显子，从成熟mRNA的第378位(2号外显子)开始翻译，共编码1182个氨基酸残基。通过测序，该基因第2817位无义突变(C→T)是导致昆明种犀牛小鼠KIZ脱毛的遗传基础。而且，该基因在人类基因组中也非常保守，具有相似的功能。所以该基因可以用来研究人秃头症的致病机理，以及作为设计治疗丘疹性秃头症药物的靶基因。

Nucleotide variation and recombination along the fourth chromosome in Drosophila simulans

The fourth chromosome of Drosophila melanogaster and its sister species are believed to be nonrecombining and have been a model system for testing predictions of the effects of selection on linked, neutral variation. We recently examined nucleotide variat

海马-前额叶神经回路与工作记忆

学习和记忆是神经科学研究的热点。已证实大脑中的海马、前额叶和海马-前额叶回路均参与工作记忆功能。该文对海马-前额叶回路的解剖和生理特性以及海马、前额叶和海马-前额叶回路在工作记忆中的作用的研究进展做一概述。

中国蚌螨属水螨一新种记述(蜱螨亚纲,蚌螨科)(英文)

记述了从我国江西省淡水蚌中采到的蚌螨科Unioni colidae水螨1新种,簇刺蚌螨U.(Anodontinatax)penicilla tussp.nov.,模式标本保存于南昌大学生物科学工程系。簇刺蚌螨,新种Unionicola(Anodontinatax)penicillatus sp.nov.(图1～11) 正模♂,副模1♀,江西鄱阳湖,1998 11 11,文春根采自背角无齿蚌A.woodianawoodiana(Lea)。鉴别特征新种近似于中间蚌螨U.(Anodontinatax) inte

银鲫种系细胞标记分子Vasa:cDNA克隆及其抗体制备(英文)

种系细胞始自胚胎发育早期,是动物生殖及生殖工程的基础。为研究鱼类的种系细胞提供标记分子,我们克隆并鉴定了银鲫的vasacDNA即Cagvasa。CagvasacDNA全长2771碱基(nt),编码的蛋白为银鲫Vasa即CagVasa,全长701个氨基酸(aa)。CagVasa蛋白与已知Vasa蛋白的结构特征一致:在N端有14个RGG重复序列,在C端Vasa所特有的8个功能域俱全。银鲫Vasa与鲤鱼、斑马鱼、陆生脊椎动物和果蝇的Vasa蛋白分别有95%,89%,61%-66%和50%的同源性。卵巢切片的RN

A fully three-dimensional atomistic quantum mechanical study on random dopant-induced effects in 25-nm MOSFETs

A fully 3-D atomistic quantum mechanical simulation is presented to study the random dopant-induced effects in nanometer metal-oxide-semiconductor field-effect transistors. The empirical pseudopotential is used to represent the single particle Hamiltonian, and the linear combination of bulk band method is used to solve the million atom Schrodinger equation. The gate threshold fluctuation and lowering due to the discrete dopant configurations are studied. It is found that quantum mechanical effects increase the threshold fluctuation while decreasing the threshold lowering. The increase of threshold fluctuation is in agreement with the researchers' early study based on an approximated density gradient approach. However, the decrease in threshold lowering is in contrast with the density gradient calculations.

Annealing study of carrier concentration in gradient-doped GaAs/GaAlAs epilayers grown by molecular beam epitaxy

We measured the carrier concentration distribution of gradient-doped GaAs/GqAlAs epilayers grown by molecular beam epitaxy before and after annealing at 600 degrees C, using electrochemical capacitance voltage profiling, to investigate the internal variation of transmission-mode GaAs photocathodes arising from the annealing process. The results show that the carrier concentration increased after annealing. As a result, the total band-bending energy in the gradient-doped GaAs emission layer increased by 25.24% after annealing, which improves the pbotoexcited electron movement toward the surface. On the other hand, the annealing process resulted in a worse carrier concentration discrepancy between the GaAs and the GaAlAs, which causes a lower back interface potential barrier, decreasing the amount of high-energy photoelectrons. (C) 2009 Optical Society of America

The structural and photoluminescence character of InAs quantum dots grown on a combined InAlAs and GaAs strained buffer

The structural and photoluminescence (PL) properties of the InAs quantum dots (QDs) grown on a combined InAlAs and GaAs strained buffer layer have been investigated by AFM and PL measurements. The dependence of the critical thickness for the transition from 2D to 3D on the thickness of GaAs layer is demonstrated directly by RHEED. The effects of the introduced-InAlAs layer on the density and the aspect ratio of QDs have been discussed.