An Electrowetting Model For Rough Surfaces Under Low Voltage

Electrowetting is one of the most effective methods to enhance wettability. A significant change of contact angle for the liquid droplet can result from the surface microstructures and the external electric field, without altering the chemical composition of the system. During the electrowetting process on a rough surface, the droplet exhibits a sharp transition from the Cassie-Baxter to the Wenzel regime at a low critical voltage. In this paper, a theoretical model for electrowetting is put forth to describe the dynamic electrical control of the wetting behavior at the low voltage, considering the surface topography. The theoretical results are found to be in good agreement with the existing experimental results. (c) Koninklijke Brill NV, Leiden, 2008.

A Low-Voltage Silicon Light Emitting Device in Standard Salicide CMOS Technology

National Natural Science Foundation of China 60536030 60776024 60877035 90820002 National High-Technology Research and Development Program of China 2007AA04Z329 2007AA04Z254

A Fully Integrated 900-MHz Passive RFID Transponder Front End With Novel Zero-Threshold RF-DC Rectifier

This paper presents a fully integrated CMOS analog front end for a passive 900-MHz radio-frequency identification (RFID) transponder. The power supply in this front end is generated from the received RF electromagnetic energy by using an RF-dc voltage rectifier. In order to improve the compatibility with standard CMOS technology, Schottky diodes in conventional RF-dc rectifiers are replaced by diode-connected MOS transistors with zero threshold. Meanwhile, theoretical analyses for the proposed rectifier are provided and verified by both simulation and measurement results. The design considerations of the pulsewidth-modulation (PWM) demodulator and the backscatter modulator in the front end are also discussed for low-power applications. The proposed front end is implemented in a 0.35-mu m 2P4M CMOS technology. The whole chip occupies a die area of 490 x 780 mu m(2) and consumes only 2.1 mu W in reading mode under a self-generated 1.5-V supply voltage. The measurement results show that the proposed rectifier can properly operate with a - 14.7-dBm input RF power at a power conversion efficiency of 13.0%. In the proposed RFID applications, this sensitivity corresponds to 10.88-m communication distance at 4-W equivalent isotropically radiated power from a reader base station.

A novel DC-DC charge pump circuit for passive RFID transponder

This paper presents a low-voltage, high performance charge pump circuit suitable for implementation in standard CMOS technologies. The proposed charge pump has been used as a part of the power supply section of fully integrated passive radio frequency identification(RFID) transponder IC, which has been implemented in a 0.35-um CMOS technology with embedded EEPROM offered by Chartered Semiconductor. The proposed DC/DC charge pump can generate stable output for RFID applications with low power dissipation and high pumping efficiency. The analytical model of the voltage multiplier, the comparison with other charge pumps, the simulation results, and the chip testing results are presented.

Self-consistent analysis of AlSb/InAs high electron mobility transistor structures

The influences of channel layer width, spacer layer width, and delta-doping density on the electron density and its distribution in the AlSb/InAs high electron mobility transistors (HEMTs) have been studied based on the self-consistent calculation of the Schrodinger and Poisson equations with both the strain and nonparabolicity effects being taken into account. The results show that, having little influence on the total two dimensional electron gas (2DEG) concentration in the channel, the HEMT's channel layer width has some influence on the electron mobility, with a channel as narrow as 100-130 angstrom being more beneficial. For the AlSb/InAs HEMT with a Te delta-doped layer, the 2DEG concentration as high as 9.1 X 10(12) cm(-2) can be achieved in the channel by enhancing the delta-doping concentration without the occurrence of the parallel conduction. When utilizing a Si delta-doped InAs layer as the electron-supplying layer of the AlSb/InAs HEMT, the effect of the InAs donor layer thickness is studied on the 2DEG concentration. To obtain a higher 2DEG concentration in the channel, it is necessary to use an InAs donor layer as thin as 4 monolayer. To test the validity of our calculation, we have compared our theoretical results (2DEG concentration and its distribution in different sub-bands of the channel) with the experimental ones done by other groups and show that our theoretical calculation is consistent with the experimental results.

Preparation and Luminescence Properties of Gd2MoO6:Eu3+ Nanofibers and Nanobelts by Electrospinning

Gd2MoO6:Eu3+ nanofibers and nanobelts have been prepared by a combination method of the sol-gel process and electrospinning. X-ray diffraction (XRD), Fourier transform infrared (FTIR) spectroscopy, scanning electron microscopy (SEM), transmission electron microscopy (TEM), high resolution transmission electron microscopy, photoluminescence, and low voltage cathodoluminescence as well as kinetic decays were used to characterize the resulting samples. The results of XRD and FTIR indicate that the Gd2MoO6:Eu3+ samples have crystallized at 600 degrees C with the monoclinic (alpha) structure. The SEM and TEM results indicate that the as-formed precursor fibers and belts are uniform and that the as-prepared nanofibers and nanobelts consist of nanoparticles. Gd2MoO6:Eu3+ phosphors show their strong characteristic emission under UV excitation (353 nm) and low voltage electron-beam excitation (3 kV), making the materials have potential applications in fluorescent lamps and field-emission displays.

Synthesis and luminescent properties of LaInO3: RE3+ (RE = Sm, Pr and Tb) nanocrystalline phosphors for field emission displays

LaInO3: Sm3+, LaInO3: Pr3+ and LaInO3: Tb3+ phosphors were prepared through a Pechini-type sol-gel process. X-ray diffraction, field emission scanning electron microscopy, photoluminescence, and cathodoluminescence (CL) spectra were utilized to characterize the synthesized phosphors. XRD results reveal that the pure LaInO3 phase can also be obtained at 700 degrees C. FE-SEM images indicate that the LaInO3: Sm3+, LaInO3: Pr3+ and LaInO3: Tb3+ phosphors are composed of aggregated spherical particles with sizes around 80-120 nm. Under the excitation of ultraviolet light and low voltage electron beams (1-5 kV), the LaInO3: Sm3+, LaInO3: Pr3+ and LaInO3: Tb3+ phosphors show the characteristic emissions of Sm3+ ((4)G(5/2)-H-6(5/2,7/2,9/2) transitions, yellow), Pr3+ (P-3(0)-H-3(4), P-3(1)-H-3(5), D-1(2)-H-3(4) and P-3(0)-F-3(2) transitions, blue-green) and Tb3+ (D-5(4)-F-7(6.5,4.3) transitions, green) respectively. The corresponding luminescence mechanisms are discussed. These phosphors have potential applications in field emission displays.

Facile chemical conversion synthesis and luminescence properties of uniform Ln3+ (Ln = Eu, Tb)-doped NaLuF4 nanowires and LuBO3 microdisks

Uniform NaLuF(4) nanowires and LuBO(3) microdisks have been successfully prepared by a designed chemical conversion method. The lutetium precursor nanowires were first prepared through a simple hydrothermal process. Subsequently, uniform NaLuF(4) nanowires and LuBO(3) microdisks were synthesized at the expense of the precursor by a hydrothermal conversion process. The whole process was carried out in aqueous condition without any organic solvents, surfactant, or catalyst. The conversion processes from precursor to the final products have been investigated in detail. The as-obtained Eu(3+) and Tb(3+)-doped LuBO(3) microdisks and NaLuF(4) nanowires show strong characteristic red and green emissions under ultraviolet excitation or low-voltage electron beam excitation. Moreover, the luminescence colors of the Eu(3+) and Tb(3+) codoped LuBO(3) samples can be tuned from red, orange, yellow, and green-yellow to green by simply adjusting the relative doping concentrations of the activator ions under a single wavelength excitation, which might find potential applications in the fields such as light display systems and optoelectronic devices.

Uniform Lanthanide Orthoborates LnBO(3) (Ln = Gd, Nd, Sm, Eu, Tb, and Dy) Microplates: General Synthesis and Luminescence Properties

A variety of uniform lanthanide orthoborates LnBO(3) (Ln = Gd, Nd, Sm, Eu, Tb, and Dy) microplates have been successfully prepared by a general and facile conversion method. One-dimensional (ID) lanthanide hydroxides were first prepared through a simple hydrothermal process. Subsequently, uniform LnBO(3) microplates were synthesized at the expense of the ID precursors during a hydrothermal conversion process. The whole process in this method was carried out in aqueous condition without the use of any organic solvents, surfactant, or catalyst. The as-obtained rare earth ions doped GdBO3 and TbBO3 microplates show strong light emissions with different colors coming from different activator ions under ultraviolet excitation or low-voltage electron beam excitation, which might find potential applications in fields such as light phosphor powders and advanced flat panel display devices.

Highly Uniform Gd(OH)(3) and Gd2O3:Eu3+ Nanotubes: Facile Synthesis and Luminescence Properties

Uniform Gd(OH)(3) nanotubes have been prepared via a simple wet-chemical route at ambient pressure and low temperature, without any catalysts, templates, or substrates, in which Gd(NO3)(3) was used as the gallium source and ammonia as the alkali. SEM and TEM images indicate that the as-obtained Gd(OH)3 entirely consists of uniform nanotubes in high yield with diameters of about 40 nm and lengths of 200-300 nm. The temperature-dependent morphological evolution and the formation mechanism of the Gd(OH)(3) nanotubes were investigated in detail. Furthermore, the Gd2O3 and Eu3+-doped Gd2O3 nanotubes, which inherit their parents' morphology, were obtained during a direct annealing process in air. The corresponding Gd2O3:Eu3+ nanotubes exhibit the strong red emission corresponding to the D-5(0)-F-7(2), transition of the Eu3+ ions under UV light or low-voltage electron beam excitation, which might find potential applications in the fields such as light-emitting phosphors, advanced flat panel displays, or biological labeling.

General and Facile Method To Prepare Uniform Y2O3:Eu Hollow Microspheres

Well-shaped Y2O3:Eu hollow microspheres have been successfully prepared on a large scale via a urea-based homogeneous precipitation technique in the presence of colloidal carbon spheres as hard templates followed by a subsequent heat treatment process. XRD results demonstrate that all the diffraction peaks of the samples can be well indexed to the pure cubic phase Of Y2O3. TEM and SEM images indicate that the shell of the uniform hollow spheres, whose diameters are about 250 nm, is composed of many uniform nanoparticles with diameters of about 20 nm, basically consistent with the estimation of XRD results. Furthermore, the main process in this method was carried out in aqueous condition, without the use of organic solvents or etching agents. The as-prepared hollow Y2O3:Eu microspheres show a strong red emission corresponding to the D-5(0)-F-7(2) transition of the Eu3+ ions under ultraviolet or low voltage excitation, which might find potential applications in fields such as light phosphor powders, advanced flat panel displays, field emission display devices, and biological labeling.

Y2O3 : Eu3+ microspheres: Solvothermal synthesis and luminescence properties

Y2O3 : Eu3+ microspheres, with an average diameter of 3 mu m, were successfully prepared through a large-scale and facile solvothermal method followed by a subsequent heat treatment. X-ray diffraction, Fourier transform infrared spectroscopy, energy-dispersive X-ray spectra, thermogravimetric and differential thermal analysis, inductive coupled plasma atomic absorption spectrometric analysis, scanning electron microscopy, transmission electron microscopy, photoluminescence spectra, as well kinetic decays, and cathodoluminescence spectra were used to characterize the samples. These microspheres were actually composed of randomly aggregated nanoparticles. The formation mechanisms for the Y2O3 : Eu3+ microspheres have been proposed on an isotropic growth mechanism. The Y2O3 : Eu3+ microspheres show a strong red emission corresponding to D-5(0) -> F-7(2) transition (610 nm) of Eu3+ under ultraviolet excitation (259 nm) and low-voltage electron beams excitation (1-5 kV), which have potential applications in fluorescent lamps and field emission displays.

Spherical SiO2@GdPO4 : Eu3+ core-shell phosphors: Sol-gel synthesis and characterization

Nanocrystalline GdPO4 : Eu3+ phosphor layers were coated on non-aggregated, monodisperse and spherical SiO2 particles by Pechini sol-gel method, resulting in the formation of core-shell structured SiO2@GdPO4 : Eu3+ particles. X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FT IR), field emission scanning electron microscopy (FESEM), transmission electron microscopy (TEM), photoluminescence (PL), low-voltage cathodoluminescence (CL), time-resolved PL spectra and lifetimes were used to characterize the core-shell structured materials. Both XRD and FT IR results indicate that GdPO4 layers have been successfully coated on the SiO2 particles, which can be further verified by the images of FESEM and TEM. Under UV light excitation, the SiO2@GdPO4: Eu3+ phosphors show orange-red luminescence with Eu(3+)sD(0)-F-7(1) (593 nm) as the most prominent group. The PL excitation and emission spectra suggest that an energy transfer occurs from Gd3+ to Eu3+ in SiO2@GdPO4: Eu3+ phosphors. The obtained core-shell phosphors have potential applications in FED and PDP devices.

Design and fabrication of 1.06 mu m resonant-cavity enhanced reflective modulator with GaInAs/GaAs quantum wells

A resonant-cavity enhanced reflective optical modulator is designed and frabricated, with three groups of three highly strained InGaAS/GaAs quantum wells in the cavity, for the low voltage and high contrast ratio operation. The quantum wells are positioned in antinodes of the optical standing wave. The modulator is grown in a single growth step in an molecular beam epitaxy system, using GaAs/AIAs distributed Bragg reflectors as both the top and bottom mirrors. Results show that the reflection device has a modulation extinction of 3 dB at -4.5 V bias.

VCSEL-based parallel optical transmission module

This paper describes the design process and performance of the optimized parallel optical transmission module. Based on 1x12 VCSEL (Vertical Cavity Surface Emitting Laser) array, we designed and fabricated the high speed parallel optical modules. Our parallel optical module contains a 1x12 VCSEL array, a 12 channel CMOS laser driver circuit, a high speed PCB (Printed Circuit Board), a MT fiber connector and a packaging housing. The L-I-V characteristics of the 850nm VCSEL was measured at the operating current 8mA, 3dB frequency bandwidth more than 3GHz and the optical output 1mW. The transmission rate of all 12 channels is 30Gbit/s, with a single channel 2.5Gbit/s. By adopting the integration of the 1x12 VCSEL array and the driver array, we make a high speed PCB (Printed Circuit Board) to provide the optoelectronic chip with the operating voltage and high speed signals current. The LVDS (Low-Voltage Differential Signals) was set as the input signal to achieve better high frequency performance. The active coupling was adopted with a MT connector (8 degrees slant fiber array). We used the Small Form Factor Pluggable (SFP) packaging. With the edge connector, the module could be inserted into the system dispense with bonding process.