10 resultados para Low impedance

em Chinese Academy of Sciences Institutional Repositories Grid Portal


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Scandia and ceria doped zirconia samples, with 10 mol% SC2O3 and different content of CeO2, were synthesized and characterized. The XRD results depict that the sintered samples have a cubic phase structure. However, Raman spectra show that besides the main cubic phase, a secondary phase is also present in the sintered samples. The addition of CeO2 can raise the content of the cubic phase, but the minor metastable tetragonal phase (t'-phase) exists even at the CeO2 content as high as 10 mol%. The near-UV Raman spectra indicate that the deformed tetragonal structure predominates at the grain boundary. The addition of CeO2 can reduce the impurity at grain boundary, and no impurity can be found by near-UV Raman spectroscopy at the grain boundary of the samples with high CeO2 content. The impedance measurements show that with the increase of CeO2 content, the impedance of grain boundary decreases and the bulk impedance increases. The low impedance of grain boundary can be attributed to the formation of a clean grain boundary upon CeO2 doping, and the increase of the bulk impedance is due to the blocking effect of the large Ce(IV) ions. (c) 2005 Elsevier B.V All rights reserved.

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We designed and fabricated GaAs OMIST (Optical-controlled Metal-Insulator-Semiconductor Thyristor) device. Using oxidation of A1As layer that is grown by MBE form the Ultra-Thin semi-Insulating layer (UTI) of the GAAS OMIST. The accurate control and formation of high quality semi-insulating layer (AlxOy) are the key processes for fabricating GaAs OMIST. The device exhibits a current-controlled negative resistance region in its I-V characteristics. When illuminated, the major effect of optical excitation is the reduction of the switching voltage. If the GaAs OMIST device is biased at a voltage below its dark switching voltage V-s, sufficient incident light can switch OMIST from high impedance low current"off"state to low impedance high current "on"state. The absorbing material of OMIST is GaAs, so if the wavelength of incident light within 600 similar to 850nm can be detected effectively. It is suitable to be used as photodetector for digital optical data process. The other attractive features of GaAs OMIST device include suitable conducted current, switching voltage and power levels for OEIC, high switch speed and high sensitivity to light or current injection.

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Various Plasma Electrolytic Oxidation (PEO) ceramic coatings were prepared on LY12 aluminum alloy by adjusting the concentration of sodium silicate solution. Optical microscope (OM), XRD and EIS were used to study their morphology, composition and anti corrosion behavior in NaCl solution. Increasing concentration of sodium silicate leads to the increase of the total coating thickness while too high and too low concentration lead to the decrease of inner dense layer. The main composition of PEO coatings prepared in 20, 40 and above 60g/L concentration solution are correspondingly alumina, alumina with mullite, and amorphous phase. The corrosion resistance is determined by the inner dense layer. Increasing the thickness of inner dense layer can improve the anti-corrosion performance. PEO coating's corrosion resistance in acidic, alkaline and neutral NaCl solution is proved and the corrosion mechanism involved is also discussed.

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A 3(rd) order complex band-pass filter (BPF) with auto-tuning architecture is proposed in this paper. It is implemented in 0.18 mu m standard CMOS technology. The complex filter is centered at 4.092MHz with bandwidth of 2.4MHz. The in-band 3(rd) order harmonic input intercept point (IIP3) is larger than 19dBm, with 50 Omega as the source impedance. The input referred noise is about 80 mu V-rms. The RC tuning is based on Binary Search Algorithm (BSA) with tuning accuracy of 3%. The chip area of the tuning system is 0.28x0.22mm(2), less than 1/8 of that of the main-filter which is 0.92x0.59mm(2). After tuning is completed, the tuning system will be turned off automatically to save power and to avoid interference. The complex filter consumes 2.6mA with a 1.8V power supply.

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A series of solid electrolytes, (Ce(0.8)Ln(0.2))(1 - x)MxO2 - delta(Ln = La, Nd, Sm, Gd, M:Alkali-earth), were prepared by amorphous citrate gel method. XRD patterns indicate that a pure fluorite phase is formed at 800 degreesC. The electrical conductivity and the AC impedance spectra were measured. XPS spectra show that the oxygen vacancies increase owing to the MO doping, which results in the increase of the oxygen ionic transport number and conductivity. The performance of ceria-based solid electrolyte is improved. The effects of rare-earth and alkali-earth ions on the electricity were discussed. The open-circuit voltages and maximum power density of planar solid oxide fuel cell using (Ce0.8Sm0.2)(1 - 0.05)Ca0.05O2 - delta as electrolyte are 0.86 V and 33 mW . cm(-2), respectively.

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Chitosan has shown its potential as a non-viral gene carrier and an adsorption enhancer for subsequent drug delivery to cells. These results showed that chitosan acted as a membrane perturbant. However, there is currently a lack of direct experimental evidence of this membrane perturbance effect, especially for chitosans with low molecular weight (LMW). In this report, the interaction between a lipid (didodecyl dimethylammonium bromide; DDAB) bilayer and chitosan with molecular weight (MW) of 4200 Da was studied with cyclic voltammetry (CV), electrochemical impedance spectroscopy and surface plasmon resonance (SPR). A lipid bilayer was formed by-fusion of oppositely charged lipid vesicles on a mercaptopropionic acid (MPA)-modified gold surface to mimic a cell membrane. The results showed that the LMW chitosan could disrupt the lipid bilayer, and the effect seemed,to be in a concentration-dependent manner.

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A composite solid polymer electrolyte (SPE) of (PEO)(10)LiClO4-Al2O3 was prepared and Pt and stainless steel(SS) blocking electrodes were used for an impedance study. It was found that the semicircle in the high frequency range and the straight line in the low frequency range depend upon different blocking electrodes and polarization potentials applied in the experiments. In the equivalent circuit. two constant phase elements (CPE) have been used instead of the pure geometrical and double layer capacitances. respectively. A theoretical line calculated from their estimated values has a good correlation with the experiment data. Moreover. the equivalent circuit also can be used to explain the impedance properties of Pt and stainless steel (SS) blocking electrodes both in the high and the low frequency ranges. (C) 2001 Elsevier Science Ltd. All rights reserved.

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The solid electrolytes, BaCe(0.8)Ln(0.2)O(2.9) (Ln: Gd, Sm, Eu), were prepared by the sol-gel method. XRD indicated that a pure orthorhombic phase was formed at 900 degrees C. The synthesis temperature by the sol-gel method was about 600 degrees C: lower than the high temperature solid phase reaction method. The electrical conductivity and impedance spectra were measured and the conduction mechanism was studied. The grain-boundary resistance of the solid electrolyte could be reduced or eliminated by the sol-gel method. The conductivity of BaCe0.8Gd0.2O2.9 is 7.87 x 10(-2) S.cm(-1) at 800 degrees C. The open-circuit voltage of hydrogen-oxygen fuel cell using BaCe0.8Gd0.2O2.9 as electrolyte was near to 1 V and its maximum power density was 30 mW.cm(-2).

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Impedance study was carried out for the interfaces between lithium, polyaniline (PAn), lithium-doped MnO2 and modified poly(ethylene oxide) (PEO) electrolyte under various' conditions. The interfacial charge-transfer resistances R(ct) on PEO/PAn, R(ct) on PEO/LiMn2O4 increase with depth-of-discharge and decrease after the charge of the cell containing modified PEO as electrolyte. The charge-transfer resistance R(ct) on PEO/PAn is higher than R(ct) on PEO/LiMn2O4 under the same condition, since inserted species and mechanism are different for both cases. In the case of PAn, an additional charge-transfer resistance might be related to the electronic conductivity change in discharge/charge potential range, as it was evident from a voltammetry curve. With increasing cycle numbers, the charge-transfer resistance increases gradually. The impedance results also have shown that at low frequency the diffusion control is dominant in the process of the charge and discharge of Li/PEO/PAn or Li/PEO/LiMn2O4 cell. The diffusion coefficients have been calculated from impedance data.

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The passive northern continental margin of the South China Sea is rich in gas hydrates, as inferred from the occurrence of bottom-simulating reflectors (BSR) and from well logging data at Ocean Drilling Program (ODP) drill sites. Nonetheless, BSRs on new 2D multichannel seismic reflection data from the area around the Dongsha Islands (the Dongsha Rise) are not ubiquitous. They are confined to complex diapiric structures and active fault zones located between the Dongsha Rise and the surrounding depressions, implying that gas hydrate occurrence is likewise limited to these areas. Most of the BSRs have low amplitude and are therefore not clearly recognizable. Acoustic impedance provides information on rock properties and has been used to estimate gas hydrate concentration. Gas hydrate-bearing sediments have acoustic impedance that is higher than that of the surrounding sediments devoid of hydrates. Based on well logging data, the relationship between acoustic impedance and porosity can be obtained by a linear regression, and the degree of gas hydrate saturation can be determined using Archie's equation. By applying these methods to multichannel seismic data and well logging data from the northern South China Sea, the gas hydrate concentration is found to be 3-25% of the pore space at ODP Site 1148 depending on sub-surface depth, and is estimated to be less than values of 5% estimated along seismic profile 0101. Our results suggest that saturation of gas hydrate in the northern South China Sea is higher than that estimated from well resistivity log data in the gas hydrate stability zone, but that free gas is scarce beneath this zone. It is probably the scarcity of free gas that is responsible for the low amplitudes of the BSRs.