206 resultados para Long lifetime

em Chinese Academy of Sciences Institutional Repositories Grid Portal


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The lifetime of a plasma channel produced by self-guiding intense femtosecond laser pulses in air is largely prolonged by adding a high voltage electrical field in the plasma and by introducing a series of femtosecond laser pulses. An optimal lifetime value is realized through adjusting the delay among these laser pulses. The lifetime of a plasma channel is greatly enhanced to 350 ns by using four sequential intense 100fs( FWHM) laser pulses with an external electrical field of about 350kV/m, which proves the feasibility of prolonging the lifetime of plasma by adding an external electrical field and employing multiple laser pulses. (c) 2006 Optical Society of America.

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High power and long lifetime have been demonstrated for a semiconductor quantum-dot (QD) laser with five-stacked InAs/GaAs QDs separated by an InGaAs strain-reducing layer (SRL) and a GaAs spacer layer as an active medium. The QD lasers exhibit a peak power of 3.6 W at 1080 nm, a quantum slope efficiency of 84.6%, and an output-power degradation rate of 5.6%/1000 h with continuous-wave constant-current operation at room temperature. A comparative reliability investigation indicates that the lifetime of the InAs/GaAs QD laser with the InGaAs SRL is much longer than that of a QD laser without the InGaAs SRL. This improved lifetime of the QD laser could be explained by the reduction of strain in and around InAs QDs induced by the InGaAs SRL. (C) 2001 American Institute of Physics.

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A novel Nd3+-doped lead fluorosilicate glass (NPS glass) is prepared by a two-step melting process. Based on the absorption spectrum a Judd-Ofelt theory analysis is made. The emission line width of NPS glass is 44.2nm. The fluorescence decay lifetime of the 4F3/2 level is 586±20μsec, and the stimulated emission cross-section is 0.87×10-20cm2 at 1056nm. A laser oscillation is occurred at 1062nm when pumped by 808nm Diode Laser. The slope efficiency is 23.7% with a 415mJ threshold. It is supposed that NPS glass is a good candidate for using in ultra-short pulse generation and amplification by the broad emission bandwidth and long fluorescence lifetime.

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Transparent Ni2+-doped beta-Ga2O3 glass-ceramics were synthesized. The nanocrystal phase in the glass-ceramics was identified to be beta-Ga2O3 and its size was about 3.6 nm. It was confirmed from the absorption spectra that the ligand environment of Ni2+ ions changed from the trigonal bi-pyramid fivefold sites in the as-cast glass to the octahedral sites in the glass-ceramics. The broadband infrared emission centering at 1270 nm with full width at half maximum (FWHM) of more than 250 nm was observed. The fluorescence lifetime was about 1.1 mu s at room temperature. The observed infrared emission could be attributed to the T-3 (2g) (F-3) -> (3)A (2g) (F-3) transition of octahedral Ni2+ ions. It is suggested that the Ni2+-doped transparent beta-Ga2O3 glass-ceramics with broad bandwidth and long lifetime have a potential as a broadband amplification medium.

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We report near infrared broadband emission of bismuth-doped barium-aluminum-borate glasses. The broadband emission covers 1.3 mum window in optical telecommunication systems. And it possesses wide full width at half maximum (FWHM) of similar to 200nm and long lifetime as long as 350 mus. The luminescent properties are quite sensitive to glass compositions and excitation wavelengths. Based on energy matching conditions, we suggest that the infrared emission may be ascribed to P-3(1) --> P-3(0) transition of Bi+. The broad infrared emission characteristics of this material indicate that it might be a promising candidate for broadband optical fiber amplifiers and tunable lasers. (C) 2005 Optical Society of America.

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采用传统无压烧结工艺制备了Er^3+/Yb^3+共掺的氧化镧钇透明陶瓷并对其光谱性能进行了研究.样品具有较大的吸收和发射截面.La2O3的添加使样品的荧光寿命(τs)与玻璃接近,当Yb^3+和Er^3+的掺杂量分别为5at%和0.5at%时,测得τs=9.65ms.这种荧光寿命长、发射截面大和线宽窄的特性有利于微型、可集成化和大功率激光输出的实现.

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Eu2+ doped ZnS nanocrystals exhibit new luminescence properties because of the enlarged energy gap of nanocrystalline ZnS host due to quantum confinement effects. Photoluminescence emission at about 520 nm from Eu2+ doped ZnS nanocrystals at room temperature is investigated by using photoluminescence emission and excitation spectroscopy. Such green emission with long lifetime (ms) is proposed to be a result of excitation, ionization, carriers recapture and recombination via Eu2+ centers in nanocrystalline ZnS host.

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Various techniques on the growth of self-assembled compound semiconductor nano-structures (quantum dots, QDs) have been tried to enhance the controlling on size, density, emitting wavelength, uniformity in size and ordering in location of the QDs. Optimized growth conditions have been used in the application of the QD materials in opto-electronic devices. High-power long-lifetime quantum-dot laser-diodes (QD-LDs) emitting near 1 mu m, QD-LDs emitting in red-light range, 1.3 mu m QD-LDs on GaAs substrate and quantum-dot super-luminescent diodes (QD-SLDs) have successfully been achieved.

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We report highly efficient and stable organic light-emitting diodes (OLEDs) with MoO3-doped perylene-3, 4, 9, 10-tetracarboxylic dianhydride (PTCDA) as hole injection layer (HIL). A green OLED with structure of ITO/20 wt% MoO3: PTCDA/NPB/Alq(3)/LiF/Al shows a long lifetime of 1012 h at the initial luminance of 2000 cd/m(2), which is 1.3 times more stable than that of the device with MoO3 as HIL. The current efficiency of 4.7 cd/A and power efficiency of 3.7 lm/W at about 100 cd/m(2) have been obtained. The charge transfer complex between PTCDA and MoO3 plays a decisive role in improving the performance of OLEDs.

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We demonstrate extremely stable and highly efficient organic light-emitting diodes (OLEDs) based on molybdenum oxide (MoO3) as a buffer layer on indium tin oxide (ITO). The significant features of MoO3 as a buffer layer are that the OLEDs show low operational voltage, high electroluminescence (EL) efficiency and good stability in a wide range of MoO3 thickness. A green OLED with structure of ITO/MoO3/N,N-'-di(naphthalene-1-yl)-N,N-'-diphenyl-benzidene (NPB)/NPB: tris(8-hydroxyquinoline) aluminum (Alq(3)):10-(2-benzothiazolyl)-2,3,6,7-tetrahydro-1,1,7,7-tetramethyl-1H, 5H, 11H-(1)-benzopyropyrano(6,7-8-i,j)quinolizin-11-one (C545T)/Alq(3)/LiF/Al shows a long lifetime of over 50 000 h at 100 cd/m(2) initial luminance, and the power efficiency reaches 15 lm/W. The turn-on voltage is 2.4 V, and the operational voltage at 1000 cd/m(2) luminance is only 6.9 V. The significant enhancement of the EL performance is attributed to the improvement of hole injection and interface stability at anode.

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Supported lipid membranes consisting of self-assembled alkanethiol and lipid monolayers on gold substrates could be produced by three different deposition methods: the Langmuir-Blodgett (L-B) technique, the painted method, and the paint-freeze method, By using cyclic voltammetry, chronoamperometry/chronocoulometry and a.c. impedance measurements, we demonstrated that lipid membranes prepared by these three deposition methods had obvious differences in specific capacitance, resistance and thickness. The specific capacitance of lipid membranes prepared by depositing an L-B monolayer on the alkanethiol alkylated surfaces was 0.53 mu Fcm(-2), 0.44 mu Fcm(-2) by the painted method and 0.68 mu Fcm(-2) by the paint-freeze method. The specific conductivity of lipid membranes prepared by the L-B method was over three times lower than that of the painted lipid membranes, while that of the paint-freeze method was the lowest. The difference among the three types of lipid membranes was ascribed to the influence of the organic solvent in lipid films and the changes in density of the films. The lipid membranes prepared by the usual painted method contained a trace amount of the organic solvent. The organic solvent existing in the hydrocarbon core of the membrane reduced the density of the membrane and increased the thickness of the membrane. The membrane prepared by depositing an L-B monolayer containing no solvent had higher density and the lowest fluidity, and the thickness of the membrane was smaller. The lipid membrane prepared by the paint-freeze method changed its structure sharply at the lower temperature. The organic solvent was frozen out of the membrane while the density of the membrane increased greatly. All these caused the membrane to exist in a ''tilted'' state and the thickness of this membrane was the smallest. The lipid membrane produced by the paint-freeze method was a membrane not containing organic solvent. This method was easier in manipulation and had better reproducibility than that of the usual painting method and the method of forming free-standing lipid film. The solvent-free membrane had a long lifetime and a higher mechanical stability. This model membrane would be useful in many areas of scientific research.

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The time-resolved photoluminescence and steady photoluminescence (TRPL and PL) spectra on self-assembled InAs/GaAs quantum dots (QDs) are investigated. By depositing GaAs/InAs short period superlattices (SLs), 1. 48 μtm emission is obtained at room temperature. Temperature dependent PL measurements show that the PL intensity of the emission is very steady. It decays only to half as the temperature increases from 15 K to room temperature, while at the same time, the intensity of the other emission decreases by a factor of 5 orders of magnitude. These two emissions are attributed to large-size QDs and short period superlattices (SLs), respectively. Large-size QDs are easier to capture and confine carriers,which benefits the lifetime of PL, and therefore makes the emission intensity insensitive to the temperature.

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A number of synthetic and natural source porphyrins without long alkyl chains have been examined in the form of monolayers and multilayers on solid substrates. These compounds formed stable solid condensed films with measured molecular areas compatible with a vertical or tilted orientation of these molecules on the substrate. Spectral study and fluorescence lifetime measurement, in particular, revealed the formation of aggregates as the main species in these films.

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Damage not only degrades the mechanical properties of explosives, but also influences the shock sensitivity, combustion and even detonation behavior of explosives. The study of impact damage is crucial in the vulnerability evaluation of explosives. A long-pulse low-velocity gas gun with a gas buffer was developed and used to induce impact damage in a hot pressed plastic bonded explosive. Various methods were used to detect and characterize the impact damage of the explosive. The microstructure was examined by use of polarized light microscopy. Fractal analysis of the micrographs was conducted by use of box counting method. The correlation between the fractal dimensions and microstructures was analyzed. Ultrasonic testing was conducted using a pulse through-transmission method to obtain the ultrasonic velocity and ultrasonic attenuation. Spectra analyses were carried out for recorded ultrasonic signals using fast Fourier transform. The correlations between the impact damage and ultrasonic parameters including ultrasonic velocities and attenuation coefficients were also analyzed. To quantitatively assess the impact induced explosive crystal fractures, particle size distribution analyses of explosive crystals were conducted by using a thorough etching technique, in which the explosives samples were soaked in a solution for enough time that the binder was totally removed. Impact induces a large extent of explosive crystal fractures and a large number of microcracks. The ultrasonic velocity decreases and attenuation coefficients increase with the presence of impact damage. Both ultrasonic parameters and fractal dimension can be used to quantitatively assess the impact damage of plastic bonded explosives.