Using the moving window incorporated neural network to forecast the population behavior of Nostocales spp. in the River Darling, Australia

The paper demonstrates the nonstationarity of algal population behaviors by analyzing the historical populations of Nostocales spp. in the River Darling, Australia. Freshwater ecosystems are more likely to be nonstationary, instead of stationary. Nonstationarity implies that only the near past behaviors could forecast the near future for the system. However, nonstionarity was not considered seriously in previous research efforts for modeling and predicting algal population behaviors. Therefore the moving window technique was incorporated with radial basis function neural network (RBFNN) approach to deal with nonstationarity when modeling and forecasting the population behaviors of Nostocales spp. in the River Darling. The results showed that the RBFNN model could predict the timing and magnitude of algal blooms of Nostocales spp. with high accuracy. Moreover, a combined model based on individual RBFNN models was implemented, which showed superiority over the individual RBFNN models. Hence, the combined model was recommended for the modeling and forecasting of the phytoplankton populations, especially for the forecasting.

Crystallographic tilt in GaN layers grown by epitaxial lateral overgrowth

The crystallographic tilt in GaN layers grown by epitaxial lateral overgrowth (ELO) on sapphire (0001) substrates was investigated by using double crystal X-ray diffraction (DC-XRD). It was found that ELO GaN stripes bent towards the SiNx mask in the direction perpendicular to seeding lines. Each side of GaN (0002) peak in DC-XRD rocking curves was a broad peak related with the crystallographic tilt. This broad peak split into two peaks (denoted as A and B), and peak B disappeared gradually when the mask began to be removed by selective etching. Only narrow peak A remained when the SiNx mask was removed completely. A model based on these results has been developed to show that there are two factors responsible for the crystallographic tilt: One is the non-uniformity elastic deformation caused by the interphase force between the ELO GaN layer and the SiNx mask. The other is the plastic deformation, which is attributed to the change of the threading dislocations (TDs)-from vertical in the window regions to the lateral in the regions over the mask.

Epitaxial lateral overgrowth of cubic GaN by metalorganic chemical vapor deposition

The epitaxial lateral overgrowth (ELO) of cubic GaN by metalorganic chemical vapor deposition has been performed on SiO2-patterned GaN laver. The mechanism of lateral overgrowth is studied It was found that the morphology of ELO GaN stripes strongly depended on the direction of stripe window openings, which was discussed based on the different growth rates of (1 1 1)A and (1 1 1)B. Under the optimized growth condition, single-phase cubic GaN was deposited successfully. The peak position of near-band emission in ELO GaN has a redshift of 13 meV compared with the conventionally grown sample, which may be due to the partial release of stress during the ELO process. (C) 2001 Published by Elsevier Science B.V.

Lateral shift of the transmitted light beam through a left-handed slab

It is reported that when a light beam travels through a slab of left-handed medium in the air, the lateral shift of the transmitted beam can be negative as well as positive. The necessary condition for the lateral shift to be positive is given. The validity of the stationary-phase approach is demonstrated by numerical simulations for a Gaussian-shaped beam. A restriction to the slab's thickness is provided that is necessary for the beam to retain its profile in the traveling. It is shown that the lateral shift of the reflected beam is equal to that of the transmitted beam in the symmetric configuration.

Dislocation Reduction in GaN on Sapphire by Epitaxial Lateral Overgrowth

High quality GaN is grown on GaN substrate with stripe pattern by metalorganic chemical vapor deposition by means of epitaxial lateral overgrowth. AFM,wet chemical etching, and TEM experiments show that with a two-step ELOG procedure, the propagation of defects under the mask is blocked, and the coherently grown GaN above the window also experiences a drastic reduction in defect density. In addition, a grain boundary is formed at the coalescence boundary of neighboring growth fronts. The extremely low density of threading dislocations within wing regions makes ELOG GaN a potential template for the fabrication of nitride-based lasers with improved performance.

Patterned self-adaptive polymer brushes by "grafting to" approach and microcontact printing

Patterned self-adaptive PS/P2VP mixed polymer brushes were prepared by "grafting to" approach combining with microcontact printing (muCP). The properties of the patterned surface were investigated by lateral force microscopy (LFM), XPS and water condensation figures. In the domains with grafted P2VP, the PS/P2VP mixed brushes demonstrated reversible switching behavior upon exposure to selective solvents for different components. The chemical composition of the top layer as well as the surface wettability can be well tuned due to the perpendicular phase segregation in the mixed brushes. While in the domains without grafted P2VP, the grafted PS did not have the capability of switching. The development and erasing of the pattern is reversible under different solvent treatment.